公开(公告)号：US07187420B2

公开(公告)日：2007-03-06

申请号：US10633676

申请日：2003-08-05

申请人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Jun Koyama ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Jun Koyama ,  Satoshi Teramoto

IPC分类号： H04N5/74

CPC分类号： H04N9/3147 ,  G03B21/006 ,  G09G3/001 ,  G09G3/002 ,  G09G3/003 ,  G09G3/3648 ,  G09G3/3666 ,  H04N9/3102 ,  H04N9/3141 ,  H04N13/341 ,  H04N13/398

摘要： An image display system comprises a first liquid crystal projector which projects a counterclockwise-rotating, circularly polarized light beam to form an image containing specific visual information on a screen and a second liquid crystal projector which projects a clockwise-rotating, circularly polarized light beam to form a white image on the same screen. When viewed with the naked eye, a combination of the two images projected on the screen appears totally white. A viewer wearing a dedicated viewing device equipped with an optical filter which allows counterclockwise-rotating, circularly polarized light to pass through can selectively see the image projected by the first liquid crystal projector.

摘要翻译： 图像显示系统包括：第一液晶投影仪，其投射逆时针旋转的圆偏振光束，以在屏幕上形成包含特定视觉信息的图像;以及第二液晶投影仪，其将顺时针旋转的圆偏振光束投射到 在同一屏幕上形成一个白色图像。 当用肉眼观察时，投影在屏幕上的两个图像的组合显示为全白色。 佩戴配备有允许逆时针旋转的圆偏振光通过的滤光器的专用观察装置的观看者可以选择性地看到由第一液晶投影仪投影的图像。

公开(公告)号：US07141491B2

公开(公告)日：2006-11-28

申请号：US11305213

申请日：2005-12-19

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/0657 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

摘要翻译： 通过利用金属元素获得的结晶硅膜中存在促进硅结晶的金属元素的浓度降低。 在将镍引入非晶硅膜103之后，进行结晶的第一热处理。 然后，照射激光以扩散局部浓缩的镍元素。 之后，在比以前的热处理温度高的氧化气氛中进行另一次热处理。 此时，将HCl等添加到大气中。 在该步骤中形成热氧化膜106。 此时，将镍元素吸入热氧化膜106中。 然后，去除热氧化膜106。 由此，可以得到金属元素浓度低，结晶性高的结晶硅膜107。

公开(公告)号：US20060099780A1

公开(公告)日：2006-05-11

申请号：US11305213

申请日：2005-12-19

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/0657 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

公开(公告)号：US06570629B1

公开(公告)日：2003-05-27

申请号：US08731297

申请日：1996-10-15

申请人： Yoshiharu Hirakata ,  Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama

发明人： Yoshiharu Hirakata ,  Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama

IPC分类号： G02F11335

CPC分类号： H04N5/74 ,  G02B27/26 ,  G09G3/3648 ,  H04N9/3102 ,  H04N13/337 ,  H04N13/363 ,  H04N13/368 ,  H04N2005/745

摘要： Active matrix domains are integrated and disposed on one and the same substrate. Then, directions of orientation are differentiated by 90° for one active matrix domain and the other active matrix domain. As a result, two images whose polarizing directions differ by 90° are formed when images formed in the two active matrix domains are combined. Then, one image is appropriated as an image for right eye and the other image as an image for left eye and the combined image is seen by wearing glasses equipped with polarizing filters whose polarizing directions are different by 90° for the right and left eyes. Then, the image for the right eye and that for the left eye may be seen independently and a stereoscopic image may be obtained.

摘要翻译： 有源矩阵域被集成并设置在同一个衬底上。 然后，对于一个有源矩阵域和另一个有源矩阵域，取向的方向被差分90°。 结果，当在两个有源矩阵域中形成的图像被组合时，形成偏振方向相差90°的两个图像。 然后，将一幅图像作为右眼的图像，将另一幅图像作为左眼图像，通过佩戴配备有偏振方向对于左眼和左眼不同90°的偏振滤光片的眼镜来观察。 然后，可以独立地看到右眼的图像和左眼的图像，并且可以获得立体图像。

公开(公告)号：US06528820B1

公开(公告)日：2003-03-04

申请号：US08785486

申请日：1997-01-17

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。

公开(公告)号：US06316810B1

公开(公告)日：2001-11-13

申请号：US09350176

申请日：1999-07-09

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L2900

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Next, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystalinity can be obtained.

摘要翻译： 通过利用金属元素获得的晶体硅膜中存在促进硅结晶的金属元素的浓度降低。 在将镍元素引入非晶硅膜103之后，首先进行结晶热处理。然后，在获得结晶硅膜之后，在氧化气氛中，在高于先前热处理的温度下进行另外的热处理。 此时，将HCl等添加到大气中。 在该步骤中形成热氧化膜106。 此时，将镍元素吸入热氧化膜106中。 接下来，去除热氧化膜106。 由此，可以获得具有低浓度的金属元素和高结晶度的晶体硅膜107。

公开(公告)号：US6121683A

公开(公告)日：2000-09-19

申请号：US878484

申请日：1997-06-18

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Satoshi Teramoto

IPC分类号： H01L21/3213 ,  H01L21/768 ,  H01L27/12 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L27/12

摘要： The present invention provides an integrated circuit structure in which an area necessary for making contact is assured in a multi-layered wiring structure even when a design rule is made rigorous. In a structure in which wires separated above and below by an interlayer insulating film are contacted, the wire at the lower layer is patterned into a pattern of the wire at the upper layer which are made to contact. Thereby, the present invention allows the area necessary for making the contact to be largely assured and to deal with the micronization.

摘要翻译： 本发明提供了一种集成电路结构，其中即使在设计规则严格的情况下，也可以在多层布线结构中确保接触所需的面积。 在通过层间绝缘膜上下分离的导线接触的结构中，下层的线被图案化成与上部层接触的线的图案。 因此，本发明允许大大保证使接触所需的面积并处理微粉化。

公开(公告)号：US5894361A

公开(公告)日：1999-04-13

申请号：US720716

申请日：1996-10-02

申请人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Satoshi Teramoto ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Satoshi Teramoto ,  Jun Koyama

IPC分类号： G02F1/13 ,  G02B27/22 ,  G02F1/1335 ,  G02F1/1337 ,  G03C9/08 ,  H04N13/00 ,  G02F1/1347

CPC分类号： H04N13/0434 ,  G02F1/133528 ,  G02F1/133753 ,  H04N13/0438 ,  H04N13/0048

摘要： A display unit which allows stereoscopic images to be displayed on a direct-vision liquid crystal panel is provided. The display unit has the formation in which liquid crystal is sandwiched in a gap between a pair of glass substrates. When linearly polarized lights whose polarizing directions are differentiated by 90.degree. from each other by a .pi. cell are input alternately to the liquid crystal, images to be displayed turn out as two images whose polarizing directions differ by 90.degree. from each other and which are displayed in a time-division manner. The images may be perceived as a stereoscopic image by viewing them by glasses having polarizing directions different by 90.degree. for right and left eyes.

摘要翻译： 提供允许立体图像显示在直视液晶面板上的显示单元。 显示单元具有液晶夹在一对玻璃基板之间的间隙中的形成。 当偏光方向由pi单元彼此差分90°的线性偏振光交替地输入到液晶时，要显示的图像作为两个偏振方向彼此相差90°的图像被显示出来 以时间划分的方式。 通过用右眼和左眼不同于90°的偏振方向的眼镜观察，可以将图像视为立体图像。

公开(公告)号：US5866444A

公开(公告)日：1999-02-02

申请号：US617414

申请日：1996-03-18

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toshimitsu Konuma ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toshimitsu Konuma ,  Satoshi Teramoto

IPC分类号： G02F1/1362 ,  H01L21/48 ,  H01L21/768 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/4846 ,  H01L23/53219 ,  G02F1/13454 ,  G02F2001/136295 ,  H01L2924/0002

摘要： An integrated circuit using conductive interconnects made of aluminum or a material consisting chiefly of aluminum. Defects due to hillocks and whiskers are prevented. The integrated circuit is composed of TFTs. Gate interconnects are made of aluminum. Before a metallization film for forming the gate interconnects is patterned, slits are formed in locations where crosstalks and shorts are likely to occur by generation of hillocks and whiskers. The surfaces inside the slits are anodized. The conductive interconnects are formed, using the locations provided with the slits. In this way, during the anodization, unwanted stress is prevented. Furthermore, it is unlikely that a required electric current cannot be supplied for the anodization because of excessive complexity of the interconnection pattern.

摘要翻译： 使用由铝制成的导电互连或主要由铝构成的材料的集成电路。 防止由于小丘和胡须引起的缺陷。 集成电路由TFT组成。 门互连由铝制成。 在用于形成栅极互连的金属化膜被图案化之前，通过产生小丘和晶须可能发生串扰和短路的位置形成狭缝。 狭缝内的表面被阳极氧化。 使用设置有狭缝的位置形成导电互连。 以这种方式，在阳极氧化期间，防止了不期望的应力。 此外，由于互连图案的过度复杂，不可能为阳极氧化提供所需的电流。

公开(公告)号：US20120299802A1

公开(公告)日：2012-11-29

申请号：US13569216

申请日：2012-08-08

申请人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Jun Koyama ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Jun Koyama ,  Satoshi Teramoto

IPC分类号： G09G3/36 ,  G09G3/00

CPC分类号： H04N13/30 ,  A63F13/02 ,  G02B27/22 ,  G02B27/2214 ,  G02B27/2264 ,  G02B27/26 ,  G09G3/003 ,  G09G3/3607 ,  G09G3/3666 ,  H04N13/15 ,  H04N13/167 ,  H04N13/189 ,  H04N13/194 ,  H04N13/286 ,  H04N13/305 ,  H04N13/31 ,  H04N13/324 ,  H04N13/337 ,  H04N13/341 ,  H04N13/354 ,  H04N13/363 ,  H04N13/368 ,  H04N13/398 ,  H04N19/597 ,  H04N2013/403

摘要： In a structure in which six active matrix regions 103 to 108 are integrated on one glass substrate, horizontal scanning control circuits 101 and 102 are commonly disposed for the respective active matrix regions 103 to 105 and 106 to 108. Then the horizontal scanning control circuits 101 and 102 are operated at different timings, and images formed by the active matrix regions 103 to 105 and 106 to 108 are synthesized and projected. With this operation, the horizontal scanning frequency required for one horizontal scanning control circuit can be made half of the horizontal scanning frequency of the display screen.

摘要翻译： 在六个有源矩阵区域103至108集成在一个玻璃基板上的结构中，水平扫描控制电路101和102通常设置用于各有源矩阵区域103至105和106至108.然后水平扫描控制电路101 102以不同的定时运行，由有源矩阵区域103〜105,106〜108形成的图像被合成并投影。 通过该操作，可以使一个水平扫描控制电路所需的水平扫描频率成为显示画面的水平扫描频率的一半。