公开(公告)号：US07350011B2

公开(公告)日：2008-03-25

申请号：US11609190

申请日：2006-12-11

申请人： Leroy B. Keely ,  Matthew R. Lerner ,  Seiya Ohta ,  John Stoddard ,  Jon LeFors ,  Michael Nuttall

发明人： Leroy B. Keely ,  Matthew R. Lerner ,  Seiya Ohta ,  John Stoddard ,  Jon LeFors ,  Michael Nuttall

IPC分类号： G06F13/00

CPC分类号： G06F1/1632 ,  G06F1/1626 ,  G06F2200/1635

摘要： An expansion device is provided for expanding the functionality of a mobile electronic device while in a mobile mode and/or in a desktop mode. The expansion device may be a media slice that provides multimedia functionality to a mobile electronic device. The media slice may be configured to receive an electromechanical interface from the mobile electronic device and to replicate the electromechanical interface for connecting to another expansion device, such as to a docking station or a port replicator. The expansion device and the mobile electronic device may be connected via a latch mechanism that easily couples and de-couples the devices. An expansion system is also provided that includes a support stand for providing orientation and support features for a computing device and/or an expansion device.

摘要翻译： 提供了一种用于在移动模式和/或桌面模式下扩展移动电子设备的功能的扩展设备。 扩展设备可以是向移动电子设备提供多媒体功能的媒体片。 媒体片可以被配置为从移动电子设备接收机电接口并且复制机电接口以连接到另一扩展设备，诸如对接站或端口复制器。 扩展装置和移动电子装置可以经由容易耦合和解耦装置的锁存机构来连接。 还提供了一种扩展系统，其包括用于为计算设备和/或扩展设备提供定位和支持特征的支撑架。

公开(公告)号：US20080070474A1

公开(公告)日：2008-03-20

申请号：US11525241

申请日：2006-09-20

申请人： Michael Nuttall

发明人： Michael Nuttall

IPC分类号： A63H18/00

CPC分类号： A63H18/026

摘要： A toy vehicle track set. The track set includes toy roads sized for toy vehicles. The track set allows a toy vehicle to be raised and lowered to different elevations using one or more different mechanisms.

摘要翻译： 玩具车轨道组。 轨道组包括玩具车大小的玩具道路。 轨道组允许玩具车辆使用一个或多个不同的机构升高和降低到不同的高度。

公开(公告)号：US20080051001A1

公开(公告)日：2008-02-28

申请号：US11744771

申请日：2007-05-04

申请人： Michael Nuttall ,  Harold Garner ,  Stacy O'Connor

发明人： Michael Nuttall ,  Harold Garner ,  Stacy O'Connor

IPC分类号： A63H18/00

CPC分类号： A63H18/026 ,  A63H18/023 ,  A63H18/028

摘要： Vehicle playsets having multiple configurations. The vehicle playsets may include a track segment, a trigger adjacent to the track segment, a moving component adapted to move toward the trigger, and a launch mechanism coupled to the track segment and adapted to launch a toy vehicle along the track segment toward the moving component. Striking the moving component with the toy vehicle will prevent the moving component from reaching the trigger. The playset has at least two configurations including a closed configuration and an open configuration that is suitable for play.

摘要翻译： 具有多种配置的车载电视 车辆队列可以包括轨道段，与轨道段相邻的触发器，适于朝向触发器移动的移动部件，以及耦合到轨道段的发射机构，并且适于沿着轨道段向移动状态发射玩具车辆 零件。 用玩具车敲击移动部件将会阻止移动部件到达扳机。 播放器具有至少两种配置，包括适合播放的封闭配置和开放配置。

公开(公告)号：US20080009224A1

公开(公告)日：2008-01-10

申请号：US11744793

申请日：2007-05-04

申请人： Michael Nuttall ,  Stacy O'Connor

发明人： Michael Nuttall ,  Stacy O'Connor

IPC分类号： A63H18/02

CPC分类号： A63H18/02 ,  A63H18/026

摘要： Track assemblies for toy vehicles having a plurality of track segments, a plurality of gauntlet features, and an indexing mechanism configured to regulate activation of the gauntlet features.

摘要翻译： 具有多个轨道段的玩具车辆的轨道组件，多个护肩特征以及配置成调节手套特征的激活的分度机构。

公开(公告)号：US20080009219A1

公开(公告)日：2008-01-10

申请号：US11744665

申请日：2007-05-04

申请人： Michael Nuttall ,  Harold Garner

发明人： Michael Nuttall ,  Harold Garner

IPC分类号： A63H18/06

CPC分类号： A63H18/028 ,  A63H18/06

摘要： A toy ramp device for two or more moveable objects is disclosed. In some embodiments, the toy ramp device may include a base; a ramp configured to support at least a first of the two or more moveable objects and including a first ramp end portion and a second ramp end portion, the ramp being movably connected to the base and configured to move among a plurality of positions relative to the base; and a holder mechanism attached to the ramp and configured to support at least one of the two or more moveable objects adjacent to the ramp when the ramp is in the first position, and to allow the at least one of the two or more moveable objects to move onto the ramp and move along the ramp toward the second ramp end portion when the ramp is in the second position.

摘要翻译： 公开了一种用于两个或多个可移动物体的玩具斜坡装置。 在一些实施例中，玩具斜坡装置可以包括底座; 斜坡，其被配置为支撑所述两个或更多个可移动物体中的至少一个，并且包括第一斜坡端部和第二斜坡端部，所述斜坡可移动地连接到所述基座并且构造成在相对于所述第二倾斜端部的多个位置之间移动 基础; 以及保持器机构，其附接到斜坡并且被配置为当斜坡处于第一位置时支撑与斜坡相邻的两个或更多个可移动物体中的至少一个，并且允许两个或更多个可移动物体中的至少一个 当斜坡处于第二位置时，移动到斜坡上并沿着斜坡移动到第二斜坡端部。

公开(公告)号：US07049231B2

公开(公告)日：2006-05-23

申请号：US10863046

申请日：2004-06-07

申请人： Michael Nuttall ,  Er-Xuan Ping ,  Yongjun Jeff Hu

发明人： Michael Nuttall ,  Er-Xuan Ping ,  Yongjun Jeff Hu

IPC分类号： H01L21/00

CPC分类号： H01L21/28525 ,  C23C16/04 ,  C23C16/24 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/32051 ,  H01L21/76879 ,  H01L28/60 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/7834

摘要： In but one aspect of the invention, a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. Doped source/drain regions are formed within semiconductive material laterally proximate the gate. Substantially amorphous insulating material is formed over and laterally proximate the gate. The substrate is provided within a chemical vapor deposition reactor. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the source/drain regions and not on substantially amorphous material, and forming elevated source/drains on the doped source/drain regions. In but another aspect, a method of forming a contact to a substrate is disclosed. A contact opening is etched through amorphous insulating material over a node location ultimately comprising an outwardly exposed substantially crystalline surface. Within a chemical vapor deposition reactor, a gaseous precursor comprising silicon is provided under conditions effective to substantially selectively deposit polysilicon on the outwardly exposed crystalline node location surface and not on the insulating material. Capacitor forming methods are also disclosed.

摘要翻译： 在本发明的一个方面，沉积多晶硅的方法包括在化学气相沉积反应器内提供衬底，衬底具有暴露的基本上结晶的区域和暴露的基本无定形区域。 包含硅的气体前体在有效基本上选择性地在结晶区域而非非晶区域上沉积多晶硅的条件下被供给到化学气相沉积反应器。 在另一方面，在衬底上制造场效应晶体管的方法包括形成栅极介电层和半导体材料上的栅极。 掺杂的源极/漏极区域在靠近栅极的半导体材料内形成。 基本上非晶绝缘材料形成在栅极上方和侧向靠近栅极。 衬底设置在化学气相沉积反应器内。 包含硅的气体前体在有效地基本上选择性地在源极/漏极区域上沉积多晶硅而不是基本上无定形材料的条件下被馈送到化学气相沉积反应器，并且在掺杂源极/漏极区上形成升高的源极/漏极。 在另一方面，公开了一种形成与基板的接触的方法。 接触开口在最终包括向外暴露的基本上结晶的表面的节点位置上通过非晶绝缘材料蚀刻。 在化学气相沉积反应器内，在有效地基本上选择性地将多晶硅沉积在外露的晶体结点位置表面而不是在绝缘材料上的条件下提供包含硅的气态前体。 还公开了电容器形成方法。

公开(公告)号：US20050026370A1

公开(公告)日：2005-02-03

申请号：US10931581

申请日：2004-08-31

申请人： Michael Nuttall ,  Garry Mercaldi

发明人： Michael Nuttall ,  Garry Mercaldi

IPC分类号： H01L21/28 ,  H01L29/423 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28273 ,  H01L29/42324 ,  H01L29/511 ,  Y10S438/954

摘要： A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

摘要翻译： 描述了用于将浮动栅极与非易失性存储器中的控制栅极绝缘的绝缘绝缘复合材料。 诸如未掺杂的多晶硅，非晶硅或无定形多晶硅或富含硅的氮化物的材料插入栅极结构中。 由这些膜的氧化产生的氧化膜相对不含杂质。 结果，浮栅和控制栅之间的电荷泄漏减小。

公开(公告)号：US06797558B2

公开(公告)日：2004-09-28

申请号：US10050426

申请日：2002-01-15

申请人： Michael Nuttall ,  Er-Xuan Ping ,  Yongjun Jeff Hu

发明人： Michael Nuttall ,  Er-Xuan Ping ,  Yongjun Jeff Hu

IPC分类号： H01L218242

CPC分类号： H01L21/28525 ,  C23C16/04 ,  C23C16/24 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/32051 ,  H01L21/76879 ,  H01L28/60 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/7834

摘要： A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric region, and the polysilicon is formed into a second capacitor electrode.

摘要翻译： 形成电容器的方法包括在衬底上形成第一电容器电极。 在第一电容器电极上形成基本上结晶的电容器电介质层。 具有基本上结晶的电容器介电层的基板设置在化学气相沉积反应器内。 包含硅的气体前体在有效基本上选择性地在基本上结晶的电容器介电区域上沉积多晶硅的条件下被馈送到化学气相沉积反应器，并且多晶硅形成为第二电容器电极。

公开(公告)号：US06682970B1

公开(公告)日：2004-01-27

申请号：US09692897

申请日：2000-10-19

申请人： Randhir P. S. Thakur ,  Garry A. Mercaldi ,  Michael Nuttall

发明人： Randhir P. S. Thakur ,  Garry A. Mercaldi ,  Michael Nuttall

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  G11C11/404 ,  G11C17/16 ,  H01L21/28568 ,  H01L21/76888 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/60 ,  H01L28/84

摘要： A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier material.

摘要翻译： 半导体结构包括具有第一和第二相对侧的电介质层。 导电层与电介质层的第一侧相邻并且耦合到第一端子，并且导电阻挡层与电介质层的第二侧相邻并耦合到第二端子。 导电阻挡层可以由氮化钨，氮化钨，氮化钛或其它阻挡材料形成。

公开(公告)号：US06680229B2

公开(公告)日：2004-01-20

申请号：US09770909

申请日：2001-01-26

申请人： Michael Nuttall ,  Garry Anthony Mercaldi

发明人： Michael Nuttall ,  Garry Anthony Mercaldi

IPC分类号： H01L218242

CPC分类号： H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28525 ,  H01L29/66628

摘要： A method of selectively forming contact regions on a substrate having a plurality of exposed regions includes selectively forming a contact region on each of the exposed regions of the substrate. During formation, each contact region has a first growth rate in a first direction and a second growth rate in a second direction. While each contact region is being selectively formed on the respective exposed region, the contact region is heated to increase the first growth rate of the contact region in the first direction relative to the second growth rate of the contact region in the second direction. The first growth rate may be a vertical growth rate and the second growth rate may be a lateral growth rate. The contact may be heated by applying electromagnetic radiation to an upper surface of the substrate and not applying the radiation to the vertical portions of the contact region to thereby increase the vertical growth rate relative to the lateral growth rate. The electromagnetic radiation may be collimated light such as that generated by a scanning laser beam, and the substrate and formed contact regions may be silicon or other suitable materials. This method may be used during the fabrication of MOS transistors in memory devices and other integrated circuits.

摘要翻译： 在具有多个暴露区域的衬底上选择性地形成接触区域的方法包括在衬底的每个暴露区域上选择性地形成接触区域。 在形成期间，每个接触区域在第一方向上具有第一生长速率，在第二方向上具有第二生长速率。 虽然每个接触区域被选择性地形成在相应的暴露区域上，但是接触区域被加热以增加接触区域在第一方向上相对于接触区域在第二方向上的第二增长速率的第一生长速率。 第一增长率可能是垂直增长率，第二增长率可能是横向增长率。 可以通过向基板的上表面施加电磁辐射来加热接触，并且不将辐射施加到接触区域的垂直部分，从而相对于横向生长速率增加垂直生长速率。 电磁辐射可以是诸如由扫描激光束产生的光的准直光，并且基板和形成的接触区域可以是硅或其它合适的材料。 该方法可以在存储器件和其它集成电路中的MOS晶体管的制造期间使用。