Drawstring for removal of stent
    62.
    发明授权
    Drawstring for removal of stent 有权
    束带去除支架

    公开(公告)号:US08398699B2

    公开(公告)日:2013-03-19

    申请号:US12770491

    申请日:2010-04-29

    IPC分类号: A61F2/06 A61M29/00

    摘要: A stent system includes a stent and a drawstring for removal of the stent.The drawstring includes an end string, a longitudinal string and a circumferential string. The end string is formed in an end of the stent body in an annular shape in such a way that the end string passes, in a zigzag manner, through mesh arranged in a circumferential direction of the stent body. A hook loop is formed by tying opposite ends of the end string to each other. The longitudinal string extends at a first end thereof from the end string in the longitudinal direction of the stent body. The circumferential string extends from a second end of the longitudinal string and is formed in an annular shape in such a way that the circumferential string passes, in a zigzag manner, through mesh arranged in the circumferential direction of the stent body.

    摘要翻译: 支架系统包括用于移除支架的支架和束带。 束带包括端串,纵向线和圆周线。 端柱在支架主体的端部中形成为环状,使得端柱以锯齿形的方式穿过在支架主体的圆周方向上布置的网状物。 通过将端串的相对端彼此捆绑而形成钩环。 纵向弦线在其第一端处沿着支架主体的纵向方向从端弦线延伸。 圆周线从纵向线的第二端延伸并形成为环状,使得圆周线以锯齿形的方式穿过在支架主体的圆周方向上布置的网状物。

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE
    64.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
    有机发光显示装置

    公开(公告)号:US20120049206A1

    公开(公告)日:2012-03-01

    申请号:US13177414

    申请日:2011-07-06

    IPC分类号: H01L33/62

    CPC分类号: H01L27/326 H01L51/5275

    摘要: An organic light-emitting display device includes: a substrate; pixels on a first side of the substrate, each of the pixels comprising a first region for emitting light and a second region for transmitting external light; pixel circuits on the first regions of the pixels, each of the pixel circuits comprising at least one thin film transistor; an insulating layer covering the pixel circuits; first electrodes on the insulating layer, spaced from each other on the first regions, and electrically connected to the pixel circuits; a second electrode opposite the first electrodes and formed throughout the first and second regions of all the pixels; an organic layer between the first electrodes and the second electrode; a sealing member facing the first side of the substrate; and an anti-reflection layer located on at least one of a second side of the substrate or an outer side of the sealing member.

    摘要翻译: 一种有机发光显示装置,包括:基板; 像素,每个像素包括用于发光的第一区域和用于传输外部光的第二区域; 像素电路在像素的第一区域上,每个像素电路包括至少一个薄膜晶体管; 覆盖像素电路的绝缘层; 绝缘层上的第一电极,在第一区域上彼此间隔开,并电连接到像素电路; 与所述第一电极相对并且形成在所有像素的整个第一和第二区域中的第二电极; 第一电极和第二电极之间的有机层; 面对所述基板的第一侧的密封构件; 以及位于基板的第二面或密封部件的外侧的至少一方的防反射层。

    Method for providing real-time service of huge and high quality digital image on internet
    65.
    发明授权
    Method for providing real-time service of huge and high quality digital image on internet 有权
    在互联网上提供高质量数字图像的实时服务的方法

    公开(公告)号:US08036496B2

    公开(公告)日:2011-10-11

    申请号:US12613818

    申请日:2009-11-06

    申请人: Sung-Min Kim

    发明人: Sung-Min Kim

    IPC分类号: G06K9/54 G06K9/36

    摘要: A method for providing real time service of huge and high quality digital image on internet is disclosed, wherein data relevant to a general life such as a general photo, an advertising leaflet, and a pamphlet and professional image data exhibited in an art gallery, exhibition grounds, a pavilion are made into huge and high quality digital image or scanned and photographed to be digital, thereby processing real time service as an interactive browsing form. In the present invention, data are directly made, edited, constructed, and uploaded on internet, thereby providing various additional information with image through hyperlink and processing high quality digital image service on network without speed delay for huge image.

    摘要翻译: 公开了一种在互联网上提供巨大和高质量数字图像的实时服务的方法,其中涉及一般生活的数据,例如一般照片,广告传单和小册子以及在艺术画廊展出的专业图像数据 理由,一个亭子被制成巨大和高质量的数字图像或扫描和拍照为数字,从而作为交互式浏览形式处理实时服务。 在本发明中,在因特网上直接制作,编辑,构造和上传数据,从而通过超链接提供各种附加信息,并且在网络上处理高质量的数字图像服务,而无需对巨大图像的速度延迟。

    Portable electronic device
    66.
    发明授权
    Portable electronic device 有权
    便携式电子设备

    公开(公告)号:US08024016B2

    公开(公告)日:2011-09-20

    申请号:US11723912

    申请日:2007-03-22

    IPC分类号: H04M1/00

    摘要: A portable electronic device having a front cover, a rear cover, and wherein one of the front cover and the rear cover is metallic and has a pattern portion with a predetermined pattern. In addition, a portable electronic device having a front cover, a rear cover, and a metallic pattern layer provided on at least one of the covers, the metallic pattern layer having a predetermined pattern.

    摘要翻译: 一种具有前盖,后盖的便携式电子设备,其中前盖和后盖中的一个是金属的并且具有预定图案的图案部分。 此外,具有设置在至少一个盖上的前盖,后盖和金属图案层的便携式电子装置,金属图案层具有预定图案。

    Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof
    68.
    发明授权
    Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof 有权
    具有至少一个悬臂电极和至少一个栅极线的多位机电存储器件及其制造方法

    公开(公告)号:US07868401B2

    公开(公告)日:2011-01-11

    申请号:US12289851

    申请日:2008-11-06

    摘要: Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.

    摘要翻译: 提供了一种多位机电存储器件及其制造方法。 器件可以在衬底上包括沿第一方向的至少一个位线; 至少一个栅极线和至少一个下部字线平行延伸给定的间隔,并且在与所述至少一个位线上的所述第一方向相交的第二方向上; 至少一个与所述至少一条位线上的所述至少一条栅极线相邻的接触焊盘; 以及耦合到所述至少一个接触垫的至少一个悬臂电极,其构造成在所述至少一个悬臂电极的上方和下方浮动,并且被配置为在垂直于所述第一和第二方向的第三方向上弯曲。

    Highly integrated semiconductor device and method of fabricating the same
    69.
    发明授权
    Highly integrated semiconductor device and method of fabricating the same 有权
    高度集成的半导体器件及其制造方法

    公开(公告)号:US07803697B2

    公开(公告)日:2010-09-28

    申请号:US11600719

    申请日:2006-11-17

    IPC分类号: H01L21/20

    CPC分类号: H01L27/24

    摘要: A method of fabricating a semiconductor device includes sequentially forming a first pattern and a second pattern on a substrate, the second pattern being a non-single-crystalline semiconductor stacked on the first pattern, wherein a portion of the substrate is exposed adjacent to the first and second patterns, forming a non-single-crystalline semiconductor layer on the substrate, the semiconductor layer contacting the second pattern and the exposed portion of the substrate, and, using the substrate as a seed layer, changing the crystalline state of the semiconductor layer to be single-crystalline and changing the crystalline state of the second pattern to be single-crystalline.

    摘要翻译: 一种制造半导体器件的方法包括在衬底上顺序地形成第一图案和第二图案,第二图案是堆叠在第一图案上的非单晶半导体,其中衬底的一部分暴露在与第一图案相邻的第一图案 和第二图案,在衬底上形成非单晶半导体层,与第二图案接触的半导体层和衬底的暴露部分,并且使用衬底作为种子层,改变半导体层的结晶状态 为单晶,并将第二图案的结晶状态改变为单晶。

    SCHOTTKY BARRIER FiNFET DEVICE AND FABRICATION METHOD THEREOF
    70.
    发明申请
    SCHOTTKY BARRIER FiNFET DEVICE AND FABRICATION METHOD THEREOF 有权
    肖特基屏障器件及其制造方法

    公开(公告)号:US20100197099A1

    公开(公告)日:2010-08-05

    申请号:US12759290

    申请日:2010-04-13

    IPC分类号: H01L21/336

    摘要: A Schottky barrier FinFET device and a method of fabricating the same are provided. The device includes a lower fin body provided on a substrate. An upper fin body having first and second sidewalls which extend upwardly from a center of the lower fin body and face each other is provided. A gate structure crossing over the upper fin body and covering an upper surface of the upper fin body and the first and second sidewalls is provided. The Schottky barrier FinFET device includes a source and a drain which are formed on the sidewalls of the upper fin body adjacent to sidewalls of the gate structure and made of a metal material layer formed on an upper surface of the lower fin body positioned at both sides of the upper fin body, and the source and drain form a Schottky barrier to the lower and upper fin bodies.

    摘要翻译: 提供肖特基势垒FinFET器件及其制造方法。 该装置包括设置在基板上的下部翅片体。 提供具有从下翅片体的中心向上延伸并彼此面对的第一和第二侧壁的上翅片本体。 提供了一种跨越上翅片体并覆盖上翅片体的上表面和第一和第二侧壁的门结构。 肖特基势垒FinFET器件包括源极和漏极,其形成在与鳍结构的侧壁相邻的上翅片体的侧壁上,并且由形成在位于两侧的下翅片体的上表面上的金属材料层 并且源极和漏极对下鳍体和上鳍体形成肖特基势垒。