公开(公告)号：US20090109740A1

公开(公告)日：2009-04-30

申请号：US12289484

申请日：2008-10-29

Applicant: Sung-chul Lee ,  Kwang-seok Kim ,  Ung-hwan Pi ,  Ji-young Bae ,  Sun-ae Seo

Inventor： Sung-chul Lee ,  Kwang-seok Kim ,  Ung-hwan Pi ,  Ji-young Bae ,  Sun-ae Seo

IPC: H01L43/02 ,  G11C11/14

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

Abstract: Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.

Abstract translation: 提供可以是使用磁畴壁运动的半导体器件。 半导体器件可以包括具有多个磁畴的磁道和被配置为接触磁道的导热绝缘层。 导热绝缘层可以防止或减少由于提供给磁道的电流而导致的磁道被加热。

公开(公告)号：US20080063908A1

公开(公告)日：2008-03-13

申请号：US11830992

申请日：2007-07-31

Applicant: Jin-goo Ahn ,  Ju-yong Kim ,  Sung-chul Lee ,  Man-seok Han ,  Yong-kul Lee ,  Chan-ho Lee ,  Leonid Gorobinskiy

Inventor： Jin-goo Ahn ,  Ju-yong Kim ,  Sung-chul Lee ,  Man-seok Han ,  Yong-kul Lee ,  Chan-ho Lee ,  Leonid Gorobinskiy

IPC: H01M8/04 ,  H01M8/06

CPC classification number: H01M8/04231 ,  H01M8/04022 ,  H01M8/04179 ,  H01M8/04776 ,  H01M8/0612

Abstract: A fuel cell system with a purging device and a method for stopping the operation of a fuel cell system comprising: a reforming device comprising a heat source unit to generate combustion heat to supply a reforming unit with heat to catalytically reform fuel to a hydrogen rich reforming gas; a fuel cell stack to generate electric energy by electrochemically reacting the reforming gas with an oxidizer and having an anode supplied with the reforming gas and a cathode supplied with the oxidizer therein; and a purging device to block the reforming gas and the oxidizer from the fuel cell stack and to supply an exhaust gas from the heat source unit into the fuel cell stack.

Abstract translation: 一种具有清洗装置的燃料电池系统和用于停止燃料电池系统的操作的方法，包括：重整装置，包括产生燃烧热的热源单元，以向重整单元提供热量以将燃料催化改性为富氢重整 加油站; 燃料电池堆，其通过使重整气体与氧化剂电化学反应而产生电能，并且具有供应有重整气体的阳极和在其中供给氧化剂的阴极; 以及用于从燃料电池堆阻挡重整气体和氧化剂并将来自热源单元的废气供应到燃料电池堆的吹扫装置。

公开(公告)号：US20080055789A1

公开(公告)日：2008-03-06

申请号：US11896214

申请日：2007-08-30

Applicant: Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

Inventor： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

IPC: G11B5/33

CPC classification number: G11C11/16

Abstract: Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

Abstract translation: 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

公开(公告)号：US20070196697A1

公开(公告)日：2007-08-23

申请号：US11581326

申请日：2006-10-17

Applicant: Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

Inventor： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

IPC: G11B5/66

CPC classification number: G11B5/667 ,  G11B5/7325

Abstract: A perpendicular magnetic recording medium is provided, the perpendicular magnetic recording medium including: a substrate; a first soft magnetic underlayer formed on the substrate; a perpendicular anisotropic middle layer that is formed on the first soft magnetic underlayer and has perpendicular magnetic anisotropy; a second soft magnetic underlayer formed on the perpendicular anisotropic middle layer; and a perpendicular magnetic recording layer formed on the second soft magnetic underlayer.

Abstract translation: 提供垂直磁记录介质，垂直磁记录介质包括：基板; 形成在所述基板上的第一软磁性底层; 垂直各向异性中间层，形成在第一软磁性底层上，具有垂直的磁各向异性; 形成在垂直各向异性中间层上的第二软磁性底层; 以及形成在第二软磁性底层上的垂直磁记录层。

公开(公告)号：US09508925B2

公开(公告)日：2016-11-29

申请号：US14816410

申请日：2015-08-03

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。

公开(公告)号：US08754717B2

公开(公告)日：2014-06-17

申请号：US13096627

申请日：2011-04-28

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H03B15/00 ,  B82Y25/00

CPC classification number: H03B15/006 ,  B82Y25/00

Abstract: An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

Abstract translation: 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。

公开(公告)号：US08614014B2

公开(公告)日：2013-12-24

申请号：US12662215

申请日：2010-04-06

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

IPC: G11B5/66 ,  G11C19/02

CPC classification number: G11B5/72 ,  G11B5/7325 ,  G11C11/14

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).

Abstract translation: 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括原子序数大于或等于12的元素。因此，磁性层具有相对高的非绝热性（β）。

公开(公告)号：US08580408B2

公开(公告)日：2013-11-12

申请号：US11946333

申请日：2007-11-28

Applicant: Yong-su Kim ,  Sung-chul Lee

Inventor： Yong-su Kim ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808

Abstract: An apparatus for moving a magnetic domain wall and a memory device using a magnetic field application unit are provided. The apparatus for moving a magnetic domain wall includes a magnetic layer having a plurality of magnetic domains; current supply units that are disposed on both sides of the magnetic layer and supply current to the magnetic layer; and a magnetic field application unit that is disposed on at least one surface of the magnetic layer and applies a magnetic field to the magnetic layer.

Abstract translation: 提供一种使用磁场施加单元移动磁畴壁和存储装置的装置。 用于移动磁畴壁的装置包括具有多个磁畴的磁性层; 电流供给单元，其设置在磁性层的两侧并向磁性层供给电流; 以及设置在所述磁性层的至少一个表面上并向所述磁性层施加磁场的磁场施加单元。

公开(公告)号：US08526288B2

公开(公告)日：2013-09-03

申请号：US13297713

申请日：2011-11-16

Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

IPC: G11B7/00

CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

公开(公告)号：US08427246B2

公开(公告)日：2013-04-23

申请号：US12929932

申请日：2011-02-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  H03B15/006

Abstract: Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

Abstract translation: 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。