公开(公告)号：US07957184B2

公开(公告)日：2011-06-07

申请号：US12790171

申请日：2010-05-28

申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

摘要翻译： 本发明提供一种自旋注入型的低电阻磁阻元件。 形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面 。 通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

公开(公告)号：US07924607B2

公开(公告)日：2011-04-12

申请号：US12047749

申请日：2008-03-13

申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

公开(公告)号：US20080253174A1

公开(公告)日：2008-10-16

申请号：US12047749

申请日：2008-03-13

申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

公开(公告)号：US09570671B2

公开(公告)日：2017-02-14

申请号：US14479192

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。

公开(公告)号：US08686521B2

公开(公告)日：2014-04-01

申请号：US12716582

申请日：2010-03-03

申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

公开(公告)号：US07596015B2

公开(公告)日：2009-09-29

申请号：US11832203

申请日：2007-08-01

申请人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10S977/935

摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

摘要翻译： 磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向 电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在 所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

公开(公告)号：US20090080124A1

公开(公告)日：2009-03-26

申请号：US12210496

申请日：2008-09-15

申请人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/127

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material.

摘要翻译： 磁阻元件包括：具有垂直于膜平面的磁化的第一磁化参考层，磁化方向在一个方向上是不变的; 具有垂直于膜平面的磁化的无磁化层，磁化方向可变; 设置在所述第一磁化参考层和所述无磁化层之间的第一中间层; 磁性相变层，其设置在与第一中间层的磁化自由层的相对侧上，磁性相变层被磁耦合到无磁化层，并且能够双向地执行反铁磁材料和 铁磁材料; 以及激励层，其设置在与所述磁化自由层相反的所述磁性相变层的相反侧，并且使所述磁性相变层进行从所述反铁磁材料到所述铁磁性材料的磁相变。

公开(公告)号：US20080291585A1

公开(公告)日：2008-11-27

申请号：US11844069

申请日：2007-08-23

申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/33

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

公开(公告)号：US20070096229A1

公开(公告)日：2007-05-03

申请号：US11551868

申请日：2006-10-23

申请人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

发明人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  G11C11/16

摘要： A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

摘要翻译： 磁阻元件包括磁记录层，该磁记录层在沿面外方向提供双向电流时记录磁化方向变化的信息，具有固定的磁化方向的磁性参考层和设置在磁性方向之间的非磁性层 磁记录层和磁参考层。 磁记录层包括与非磁性层接触并具有第一磁各向异性能的界面磁性层和具有高于第一磁各向异性能的第二磁各向异性能的磁稳定层。

公开(公告)号：US08363462B2

公开(公告)日：2013-01-29

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。