摘要:
The present invention relates to a polyimide resin produced by using silphenylene compound represented by the following formula (1) as a monomer: in which R1 to R4 each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms, and R5 and R6 each independently represents a divalent hydrocarbon group having 2 to 8 carbon atoms. The silphenylene compound of the present invention is useful as a flexible printed wiring board material, a passivation film for IC chips, and a panel material for liquid crystals.
摘要翻译:本发明涉及通过使用由下式(1)表示的硅亚苯基化合物作为单体制备的聚酰亚胺树脂:其中R 1至R 4各自独立地表示氢原子或具有1至6个碳原子的一价烃基,R5 R 6各自独立地表示碳原子数2〜8的二价烃基。 本发明的硅亚苯基化合物可用作柔性印刷线路板材料,IC芯片用钝化膜和液晶面板材料。
摘要:
A polyimide silicone resin, characterized in that the polyimide silicone resin comprises repeating units represented by the following formula (1) and has a number average molecular weight of from 5,000 to 200,000 wherein X is a tetravalent organic group, at least one of the tetravalent organic groups being represented by the following formula (2) wherein R1 may be the same with or different from each other and is a monovalent hydrocarbon group having 1 to 8 carbon atoms, R2 may be the same with or different from each other and is a trivalent organic group, and n ranges from 1 to 120 on average, and Y is a divalent organic group, at least one of the divalent organic groups comprising a phenolic hydroxyl group or a carboxyl group bonded to an aromatic ring.
摘要:
A semiconductor device includes a resistance layout area that disposes multiple unit resistors, and a voltage divider circuit that divides a voltage applied to a series circuit and has the series circuit including a first resistance element, a second resistance element, some trimming resistance element connected in series, and some trimming fuse respectively connected in parallel with the trimming resistance element, in the circuit, the unit resistors belonging to each of three main resistance elements formed by the first resistance element, the second resistance element, and a highest trimming resistance element whose resistance value is highest among the trimming resistance elements are divided into multiple blocks each including a predetermined number of the unit resistors, and the multiple groups each including one block of each of the three main resistance elements adjacently arranged are formed, and the groups arranged close to a center portion of the resistance layout area.
摘要:
According to some preferred embodiments of the present invention, a motor driving circuit includes a phase detection circuit configured to detect a rotation phase of a motor and output a phase detection signal, a first amplifier configured to amplify the phase detection signal and output an amplified detection signal, and a second amplifier configured to amplify the amplified detection signal in accordance with a power supply voltage and output a driving signal to the motor. The motor driving circuit is further provided with a controlling circuit configured to detect the power supply voltage and increase/decrease amplitude of the amplified detection signal outputted from the first amplifier in response to an increase/decrease of the detected power supply voltage, whereby heat generation and noise generation can be restrained, irrespective of the increase/decrease of the power supply voltage.
摘要:
A delay time generation circuit is disclosed that includes a counter circuit composed of plural cascade-connected flip-flop circuits for counting a pulse number of an input clock signal and uses as a delay time signal an inverse signal of an output of the last stage or a predetermined stage of the flip-flop circuits of the counter circuit. In the delay time generation circuit, a delay time is generated by the use of an output signal of one of the flip-flop circuits precedent to the last stage or the predetermined stage flip-flop circuit of the counter circuit at testing an electronic circuit. This configuration makes it possible to reduce the delay time without using a special high-speed clock.
摘要:
A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control is disclosed. The back-gate voltage generator circuit includes first and second n-type MOSFETs connected in series through a common source electrode. A voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS.
摘要:
A semiconductor unit for protecting a secondary battery has a current detecting terminal converting a charging current to a negative voltage with respect to a negative electrode potential (ground potential) of the secondary battery when the secondary battery is charged, converting the charging current to a positive voltage with respect to the negative electrode potential (ground potential) of the secondary battery when the secondary battery is discharged, and detecting the charging/discharging current; and a test signal generating circuit generating a first test signal when the voltage of the current detecting terminal lowers to a first negative voltage which does not occur in a normal operation state of the semiconductor unit, and generating a second test signal when the voltage of the current detecting terminal lowers to a second negative voltage lower than the first negative voltage.
摘要:
A temperature sensing circuit that detects a given temperature includes a first differential input circuit and a second differential input circuit connected to the first differential input circuit. The first differential input circuit is configured to provide a first offset voltage with no temperature coefficient. The second differential input circuit is configured to provide a second offset voltage with a non-zero temperature coefficient. The given temperature is detected based on the first offset voltage and the second offset voltage. An electronic device using such a temperature sensing circuit is also disclosed.
摘要:
A polyimide resin, characterized in that the polyimide resin comprises three kinds of repeating units represented by the formula (1), and has a weight average molecular weight, reduced to polystyrene, of from 5,000 to 500,000, an acryl equivalent of from 400 to 3,000 g/eq, and a carboxylic acid equivalent of from 300 to 2500 g/eq wherein X is a tetravalent organic group, Y is a divalent organic group, Z is a divalent organic group, W is a divalent organic group having a polyorganosiloxane structure. The polyimide resin is suitable for preparing a patterned or non-patterned protective coating.
摘要翻译:一种聚酰亚胺树脂,其特征在于,所述聚酰亚胺树脂包括由式(1)表示的三种重复单元,其重均分子量减少至聚苯乙烯为5,000至500,000,丙烯当量为400至3,000 g / eq,羧酸当量为300〜2500g / eq,其中X为四价有机基团,Y为二价有机基团,Z为二价有机基团,W为具有聚有机硅氧烷结构的二价有机基团。 聚酰亚胺树脂适用于制备图案化或未图案化的保护涂层。
摘要:
This invention relates to a novel polyimide silicone having an alcoholic hydroxyl group and a process for the preparation thereof. The polyimide of the invention having a primary alcoholic hydroxyl group is represented by the following general formula (1), wherein X represents a tetravalent organic group, Y represents a divalent group having at least one monovalent group selected from the group consisting of a phenolic hydroxyl group and a carboxyl group, with at least one being a divalent organic group having an alcoholic hydroxyl group, Z represents a divalent organic group, W represents a divalent organic group having an organosiloxane structure, k is a positive number, and each of m and n is equal to 0 (zero) or a positive number, with 0.1≦k/(k+m+n)≦1, 0≦m/(k+m+n)≦0.8, 0≦n/(k+m+n)≦0.8.