公开(公告)号：US07110478B2

公开(公告)日：2006-09-19

申请号：US10119409

申请日：2002-04-09

申请人： Jingdong Lin ,  Justine Zhuang ,  Tong Zhao

发明人： Jingdong Lin ,  Justine Zhuang ,  Tong Zhao

IPC分类号： H03D1/00 ,  H04L27/06

CPC分类号： H04Q1/45

摘要： A method of detecting a tone signal from complex input samples r(n) in a wireless communication system is disclosed. The method comprises calculating the phase difference of the samples r(n) as a signal x(n). Next, the signal x(n) is filtered with a notch filter to generate a notched output y(n). The power of both the signal x(n) and the notched output y(n) is estimated. The ratio of the powers of the notched output y(n) and signal x(n) is calculated. The tone signal is detected if the ratio is below a predetermined threshold for a predetermined duration of time.

公开(公告)号：US20060061915A1

公开(公告)日：2006-03-23

申请号：US10948021

申请日：2004-09-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.

摘要翻译： 公开了具有改进性能的GMR自旋值结构及其制造方法。 一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。 将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。 结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率 观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

公开(公告)号：US06330234B1

公开(公告)日：2001-12-11

申请号：US09559675

申请日：2000-04-27

申请人： Peter A. Tomasi ,  Tong Zhao ,  Lindo St. Angel ,  Michael J. Schellinger ,  Dien N. Nguyen ,  Wayne H. Bradley

发明人： Peter A. Tomasi ,  Tong Zhao ,  Lindo St. Angel ,  Michael J. Schellinger ,  Dien N. Nguyen ,  Wayne H. Bradley

IPC分类号： H04J306

CPC分类号： H04J13/10 ,  H04B1/1615 ,  H04J13/0022 ,  H04W52/0225 ,  Y02D70/40

摘要： A method and apparatus reduces current consumption of a mobile communication unit, such as a cellular or mobile telephone that communicates with a base station by disabling a temperature controlled crystal oscillator and a code generator while the mobile communication unit is in a sleep mode of operation, thereby reducing the sleep mode current consumed by the mobile communication unit. Prior to entering sleep mode, the mobile communications unit stores the state of the code generator and disables the temperature controlled crystal oscillator. Upon waking from sleep mode, the mobile communication unit calculates what the state of its code generator would have been if its temperature controlled crystal oscillator had not been disabled, and uses this calculated state to achieve synchronization with a code generator in the base station.

摘要翻译： 一种方法和装置通过在移动通信单元处于睡眠操作模式期间禁用温度控制的晶体振荡器和代码生成器来减少与基站通信的移动通信单元（例如蜂窝或移动电话）的电流消耗， 从而减少由移动通信单元消耗的睡眠模式电流。 在进入睡眠模式之前，移动通信单元存储代码发生器的状态并禁止温度控制的晶体振荡器。 当从睡眠模式唤醒时，如果移动通信单元的温度控制晶体振荡器未被禁止，则计算其代码发生器的状态是什么，并且使用该计算状态来实现与基站中的代码生成器的同步。

公开(公告)号：US20160350367A1

公开(公告)日：2016-12-01

申请号：US14722330

申请日：2015-05-27

申请人： Mark Fischer ,  Prakash Khot ,  Dilip Kumar Vedula ,  Tong Zhao ,  Siva Prakash Ragavan ,  Joseph Paquette

发明人： Mark Fischer ,  Prakash Khot ,  Dilip Kumar Vedula ,  Tong Zhao ,  Siva Prakash Ragavan ,  Joseph Paquette

IPC分类号： G06F17/30

摘要： Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.

摘要翻译： 用于存储管理的计算机实现的技术包括从作为标准语法包装的查询语言查询接收的应用程序级的应用程序接收查询，标准语法包装查询具有作为参数的标识符，特定对象的标识符， 接收到的查询可执行的平台类型，并将标准语法包装查询语言查询转换为由确定的数据存储平台类型使用的确定的本机查询语言。

公开(公告)号：US09040178B2

公开(公告)日：2015-05-26

申请号：US12284409

申请日：2008-09-22

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

摘要翻译： 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC） 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施方案由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

公开(公告)号：US08747629B2

公开(公告)日：2014-06-10

申请号：US12284454

申请日：2008-09-22

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： C23C14/00 ,  C23C14/32 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/33 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1114

摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (

摘要翻译： 公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。 或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。 此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

公开(公告)号：US08659292B2

公开(公告)日：2014-02-25

申请号：US12660909

申请日：2010-03-05

申请人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

IPC分类号： G01R33/02

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3941

摘要： A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

摘要翻译： CPP MR传感器将锥形软磁通导向器（FG）层介于硬磁偏置层（HB）和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通，以有效地偏置自由层，同时消除与读取器屏蔽间隔（RSS）之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ） 是小。

公开(公告)号：US08653615B2

公开(公告)日：2014-02-18

申请号：US12313351

申请日：2008-11-19

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/12

摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.

摘要翻译： 描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。 通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。 最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。 中心铁磁层的一种可能性是NiFe，但这不是强制性的。

公开(公告)号：US08456781B2

公开(公告)日：2013-06-04

申请号：US13561206

申请日：2012-07-30

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/39 ,  C21D1/04

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49052

摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.

摘要翻译： 公开了具有FL1 /插入/ FL2配置的复合自由层，其中FL1的顶表面用弱等离子体蚀刻处理，以实现增强的dR / R，同时保持低RA和TMR或GMR传感器中的低λ。 弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。 薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。 当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

公开(公告)号：US08325448B2

公开(公告)日：2012-12-04

申请号：US12931849

申请日：2011-02-11

申请人： Kunliang Zhang ,  Shengyuan Wang ,  Tong Zhao ,  Min Li ,  Hui-Chuan Wang

发明人： Kunliang Zhang ,  Shengyuan Wang ,  Tong Zhao ,  Min Li ,  Hui-Chuan Wang

IPC分类号： G11B5/127

CPC分类号： H01L43/12 ,  B82Y40/00 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L29/82 ,  H01L43/08

摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.