公开(公告)号：US20120238067A1

公开(公告)日：2012-09-20

申请号：US13422223

申请日：2012-03-16

申请人： Won-Cheol Jeong ,  Yun-Young Yeoh ,  Dong-Won Kim ,  Hong-Bae Park ,  Hag-Ju Cho

发明人： Won-Cheol Jeong ,  Yun-Young Yeoh ,  Dong-Won Kim ,  Hong-Bae Park ,  Hag-Ju Cho

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

摘要： Methods of fabricating semiconductor devices including providing a substrate having a channel region defined therein; forming an insulation layer on the substrate; forming a gate trench for forming a gate electrode having a sidewall portion, a bottom portion and an edge portion between the sidewall portion and the bottom portion on the insulation layer, the gate electrode trench overlapping the channel region; and forming a gate electrode in the gate electrode trench. Forming the gate electrode includes forming a first metal layer pattern in the gate electrode trench and forming a second metal layer pattern on the first metal layer pattern.

摘要翻译： 制造半导体器件的方法包括提供其中限定有沟道区的衬底; 在所述基板上形成绝缘层; 形成用于形成具有侧壁部分，底部和所述侧壁部分与所述绝缘层上的所述底部之间的边缘部分的栅电极的栅极沟槽，所述栅电极沟槽与所述沟道区重叠; 以及在所述栅电极沟槽中形成栅电极。 形成栅电极包括在栅电极沟槽中形成第一金属层图案，并在第一金属层图案上形成第二金属层图案。

公开(公告)号：US07414882B2

公开(公告)日：2008-08-19

申请号：US11782423

申请日：2007-07-24

申请人： Won-Cheol Jeong

发明人： Won-Cheol Jeong

IPC分类号： G11C11/00

CPC分类号： B82Y25/00 ,  G11C11/15 ,  H01F10/3254

摘要： Integrated circuit memory devices include a semiconductor substrate and a bit line on the semiconductor substrate. A plurality of memory cells is also provided. Each of these magnetic memory cells includes a magnetic storage element, a magnetic flux focusing layer on the magnetic storage element and an electrically insulating layer extending between the bit line and the magnetic flux focusing layer. This electrically insulating layer may contact an upper surface of the magnetic flux focusing layer and a lower surface of the bit line. The magnetic memory cell further includes a non-ferromagnetic electrically conductive layer extending between the magnetic flux focusing layer and the magnetic storage element. The electrically insulating layer is configured to cause current passing in a first direction (e.g., vertical direction) from the magnetic storage element to the non-ferromagnetic electrically conductive layer during a cell writing operation to spread laterally in the magnetic flux focusing layer (and non-ferromagnetic electrically conductive layer) in a second direction (e.g., lateral direction), which is orthogonal to the first direction. The magnetic flux focusing layer may be formed of a ferromagnetic material, such as NiFe.

摘要翻译： 集成电路存储器件包括半导体衬底和半导体衬底上的位线。 还提供了多个存储单元。 这些磁存储单元中的每一个包括磁存储元件，磁存储元件上的磁通量聚焦层和在位线和磁通量聚焦层之间延伸的电绝缘层。 该电绝缘层可以接触磁通量聚焦层的上表面和位线的下表面。 磁存储单元还包括在磁通量聚焦层和磁存储元件之间延伸的非铁磁导电层。 电绝缘层被配置为在电池写入操作期间使电流在从磁存储元件到非铁磁性导电层的第一方向（例如，垂直方向）上通过，以在磁通量聚焦层（和非 - - 铁磁性导电层）在与第一方向正交的第二方向（例如，横向方向）上。 磁通聚焦层可以由诸如NiFe的铁磁材料形成。

公开(公告)号：US20080057644A1

公开(公告)日：2008-03-06

申请号：US11642198

申请日：2006-12-20

申请人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Yong-Sik Yim ,  Won-Cheol Jeong ,  Jae-Hwang Sim

发明人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Yong-Sik Yim ,  Won-Cheol Jeong ,  Jae-Hwang Sim

IPC分类号： H01L21/336

CPC分类号： H01L27/105 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/7854

摘要： Methods of forming a semiconductor device include forming a trench mask pattern on a semiconductor substrate having active regions and device isolation regions. A thermal oxidation process is performed using the trench mask pattern as a diffusion mask to form a thermal oxide layer defining a convex upper surface of the active regions. The thermal oxide layer and the semiconductor substrate are etched using the trench mask pattern as an etch mask to form trenches defining convex upper surfaces of the active regions. The trench mask pattern is removed to expose the convex upper surfaces of the active regions. Gate patterns are formed extending over the active regions.

摘要翻译： 形成半导体器件的方法包括在具有有源区和器件隔离区的半导体衬底上形成沟槽掩模图案。 使用沟槽掩模图案作为扩散掩模进行热氧化处理，以形成限定有源区的凸上表面的热氧化层。 使用沟槽掩模图案作为蚀刻掩模蚀刻热氧化物层和半导体衬底，以形成限定有源区的凸上表面的沟槽。 去除沟槽掩模图案以露出活性区域的凸上表面。 形成在有源区域上延伸的栅极图案。

公开(公告)号：US20070263431A1

公开(公告)日：2007-11-15

申请号：US11782423

申请日：2007-07-24

申请人： Won-Cheol Jeong

发明人： Won-Cheol Jeong

IPC分类号： H01L21/00 ,  G11C11/00

CPC分类号： B82Y25/00 ,  G11C11/15 ,  H01F10/3254

摘要： Integrated circuit memory devices include a semiconductor substrate and a bit line on the semiconductor substrate. A plurality of memory cells is also provided. Each of these magnetic memory cells includes a magnetic storage element, a magnetic flux focusing layer on the magnetic storage element and an electrically insulating layer extending between the bit line and the magnetic flux focusing layer. This electrically insulating layer may contact an upper surface of the magnetic flux focusing layer and a lower surface of the bit line. The magnetic memory cell further includes a non-ferromagnetic electrically conductive layer extending between the magnetic flux focusing layer and the magnetic storage element. The electrically insulating layer is configured to cause current passing in a first direction (e.g., vertical direction) from the magnetic storage element to the non-ferromagnetic electrically conductive layer during a cell writing operation to spread laterally in the magnetic flux focusing layer (and non-ferromagnetic electrically conductive layer) in a second direction (e.g., lateral direction), which is orthogonal to the first direction. The magnetic flux focusing layer may be formed of a ferromagnetic material, such as NiFe.

摘要翻译： 集成电路存储器件包括半导体衬底和半导体衬底上的位线。 还提供了多个存储单元。 这些磁存储单元中的每一个包括磁存储元件，磁存储元件上的磁通量聚焦层和在位线和磁通量聚焦层之间延伸的电绝缘层。 该电绝缘层可以接触磁通量聚焦层的上表面和位线的下表面。 磁存储单元还包括在磁通量聚焦层和磁存储元件之间延伸的非铁磁导电层。 电绝缘层被配置为在电池写入操作期间使电流在从磁存储元件到非铁磁性导电层的第一方向（例如，垂直方向）上通过，以在磁通量聚焦层（和非 - - 铁磁性导电层）在与第一方向正交的第二方向（例如，横向方向）上。 磁通聚焦层可以由诸如NiFe的铁磁材料形成。

公开(公告)号：US07057222B2

公开(公告)日：2006-06-06

申请号：US10687134

申请日：2003-10-16

申请人： Won-Cheol Jeong

发明人： Won-Cheol Jeong

IPC分类号： H01L29/76

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： A magnetic memory includes digit lines, bit lines, and magnetic tunnel junctions (MTJs) that are between the bits lines and the digit lines. The digit lines intersect the bit lines at an oblique angle. The digit lines may intersect the bit lines at an oblique angle of from 15° to 75°.

摘要翻译： 磁存储器包括在位线和数字线之间的数字线，位线和磁隧道结（MTJ）。 数位线以斜线与位线相交。 数字线可以以15°至75°的倾斜角度与位线相交。

公开(公告)号：US08610192B2

公开(公告)日：2013-12-17

申请号：US13173759

申请日：2011-06-30

申请人： Won-Cheol Jeong ,  Su-Jin Ahn ,  Yoon-Moon Park

发明人： Won-Cheol Jeong ,  Su-Jin Ahn ,  Yoon-Moon Park

IPC分类号： H01L29/76 ,  H01L29/788

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66833 ,  H01L29/792

摘要： A non-volatile memory device can include a plurality of parallel active regions that are defined by a plurality of device isolation layers formed on a semiconductor substrate, where each of the plurality of parallel active regions extends in a first direction and has a top surface and sidewalls. A plurality of parallel word lines can extend in a second direction and cross over the plurality of parallel active regions at intersecting locations. A plurality of charge storage layers can be disposed at the intersecting locations between the plurality of parallel active regions and the plurality of parallel word lines. Each of the plurality of charge storage layers at the intersecting locations can have a first side and a second side that is parallel to the second direction and can have a first length, a third side and a fourth side that are parallel to the first direction and can have a second length, where the first length is less than the second length.

摘要翻译： 非易失性存储器件可以包括由形成在半导体衬底上的多个器件隔离层限定的多个平行有源区，其中多个平行有源区中的每一个在第一方向上延伸并且具有顶表面和 侧壁 多个平行字线可以在第二方向上延伸并且在交叉位置处跨越多个平行的有效区域。 多个电荷存储层可以设置在多个平行有源区和多个平行字线之间的交叉位置处。 在交叉位置处的多个电荷存储层中的每一个可以具有平行于第二方向的第一侧和第二侧，并且可以具有平行于第一方向的第一长度，第三侧和第四侧， 可以具有第二长度，其中第一长度小于第二长度。

公开(公告)号：US20110198685A1

公开(公告)日：2011-08-18

申请号：US13095408

申请日：2011-04-27

申请人： Hyun-Suk Kim ,  Sun-II Shim ,  Chang-Seok Kang ,  Won-Cheol Jeong ,  Jung-Dal Choi ,  Jae-Kwan Park ,  Seung-Hyun Lim ,  Sun-Jung Kim

发明人： Hyun-Suk Kim ,  Sun-II Shim ,  Chang-Seok Kang ,  Won-Cheol Jeong ,  Jung-Dal Choi ,  Jae-Kwan Park ,  Seung-Hyun Lim ,  Sun-Jung Kim

IPC分类号： H01L29/792

CPC分类号： H01L21/28282 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792

摘要： Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

摘要翻译： 提供了非易失性存储器件，其包括在衬底上的控制栅电极; 在控制栅电极和衬底之间的电荷存储绝缘层; 在电荷存储绝缘层和衬底之间的隧道绝缘层; 电荷存储绝缘层和控制栅电极之间的阻挡绝缘层; 以及隧道绝缘层和阻挡绝缘层之间的材料层，材料层具有构成势阱底部的能级。

公开(公告)号：US07369428B2

公开(公告)日：2008-05-06

申请号：US11284546

申请日：2005-11-22

申请人： Won-Cheol Jeong

发明人： Won-Cheol Jeong

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C11/16

摘要： A magnetic random access memory (MRAM) device may include a magnetic tunnel junction structure between first and second electrodes. Methods of operating such as MRAM device may include providing a write current through the first electrode, through the magnetic tunnel junction structure, and through the second electrode. An auxiliary switching magnetic field may be generated by the write current through the first electrode, and a portion of the auxiliary switching magnetic field may pass through the magnetic tunnel junction structure in a direction perpendicular to a direction of the write current through the magnetic tunnel junction structure. Moreover, a magnitude of the write current and/or the auxiliary switching magnetic field may be sufficient to change a program state of the magnetic tunnel junction structure. Related devices and structures are also discussed.

摘要翻译： 磁性随机存取存储器（MRAM）装置可以包括在第一和第二电极之间的磁性隧道结结构。 操作诸如MRAM器件的方法可以包括提供通过第一电极的写入电流，通过磁性隧道结结构，以及通过第二电极。 可以通过通过第一电极的写入电流产生辅助开关磁场，并且辅助开关磁场的一部分可以在垂直于通过磁性隧道结的写入电流的方向的方向上穿过磁性隧道结结构 结构体。 此外，写入电流和/或辅助开关磁场的大小可能足以改变磁性隧道结结构的编程状态。 还讨论了相关的设备和结构。

公开(公告)号：US20070228445A1

公开(公告)日：2007-10-04

申请号：US11613345

申请日：2006-12-20

申请人： Won-Cheol Jeong ,  Su-Jin Ahn ,  Yoon-Moon Park

发明人： Won-Cheol Jeong ,  Su-Jin Ahn ,  Yoon-Moon Park

IPC分类号： H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66833 ,  H01L29/792

摘要： Nonvolatile memory devices are provided. Devices include active regions that may be defined by device isolation layers formed on a semiconductor substrate and extend in a first direction. Devices may also include word lines that may cross over the active regions and extend in a second direction intersecting the first direction. The active regions have a first pitch and the word lines have a second pitch that is greater than the first pitch.

摘要翻译： 提供非易失性存储器件。 器件包括可由形成在半导体衬底上并沿第一方向延伸的器件隔离层限定的有源区。 设备还可以包括字线，其可以跨越有效区域并且沿与第一方向相交的第二方向延伸。 有源区具有第一间距，并且字线具有大于第一间距的第二间距。