公开(公告)号：US08659103B2

公开(公告)日：2014-02-25

申请号：US13424136

申请日：2012-03-19

申请人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

发明人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.

摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一磁性层具有不变的磁化。 第二磁性层具有可变磁化强度。 在第一和第二磁性层之间提供非磁性层。 第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜 设置成与第二磁性材料膜接触。 第二磁性材料膜的Co浓度高于第一磁性材料膜。

公开(公告)号：US20130249025A1

公开(公告)日：2013-09-26

申请号：US13607700

申请日：2012-09-08

申请人： Katsuaki NATORI ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadashi Kai

发明人： Katsuaki NATORI ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadashi Kai

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element includes a bottom electrode, a first magnetic layer with an magnetic axis substantially perpendicular to a film plane thereof, a first interface layer, an MgO insulating layer, a second interface layer, a second magnetic layer with an magnetic axis nearly perpendicular to a film plane thereof, and a top electrode. The magnetoresistive element has a diffusion barrier layer between the first magnetic layer and the first interface layer when the first magnetic layer contains Pt or Pd, and a diffusion barrier layer between the second magnetic layer and the second interface layer when the second magnetic layer contains Pt or Pd. The diffusion barrier layer is an Hf film of thickness 0.6 nm to 0.8 nm.

摘要翻译： 根据一个实施例，磁阻元件包括底电极，具有基本上垂直于其膜平面的磁轴的第一磁性层，第一界面层，MgO绝缘层，第二界面层，具有 几乎垂直于其膜平面的磁轴和顶部电极。 当第一磁性层包含Pt或Pd时，磁阻元件在第一磁性层和第一界面层之间具有扩散阻挡层，当第二磁性层含有Pt时，第二磁性层和第二界面层之间具有扩散阻挡层 或Pd。 扩散阻挡层是厚度为0.6nm〜0.8nm的Hf膜。

公开(公告)号：US20130020659A1

公开(公告)日：2013-01-24

申请号：US13628724

申请日：2012-09-27

申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

摘要翻译： 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08036025B2

公开(公告)日：2011-10-11

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US07898846B2

公开(公告)日：2011-03-01

申请号：US12470786

申请日：2009-05-22

申请人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

发明人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

公开(公告)号：US07596015B2

公开(公告)日：2009-09-29

申请号：US11832203

申请日：2007-08-01

申请人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10S977/935

摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

摘要翻译： 磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向 电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在 所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

公开(公告)号：US20090080124A1

公开(公告)日：2009-03-26

申请号：US12210496

申请日：2008-09-15

申请人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/127

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material.

摘要翻译： 磁阻元件包括：具有垂直于膜平面的磁化的第一磁化参考层，磁化方向在一个方向上是不变的; 具有垂直于膜平面的磁化的无磁化层，磁化方向可变; 设置在所述第一磁化参考层和所述无磁化层之间的第一中间层; 磁性相变层，其设置在与第一中间层的磁化自由层的相对侧上，磁性相变层被磁耦合到无磁化层，并且能够双向地执行反铁磁材料和 铁磁材料; 以及激励层，其设置在与所述磁化自由层相反的所述磁性相变层的相反侧，并且使所述磁性相变层进行从所述反铁磁材料到所述铁磁性材料的磁相变。

公开(公告)号：US07474554B2

公开(公告)日：2009-01-06

申请号：US11936394

申请日：2007-11-07

申请人： Katsuya Nishiyama ,  Toshihiko Nagase

发明人： Katsuya Nishiyama ,  Toshihiko Nagase

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistance effect device includes a magnetized free layer formed of a ferromagnetic material, a magnetized fixing layer formed of a ferromagnetic material and having a crystal grain boundary, a nonmagnetic layer provided between the magnetized free layer and the magnetized fixing layer, and an antiferromagnetic layer provided on one surface of the magnetized fixing layer, which is opposed to a surface of the nonmagnetic layer. The magnetized fixing layer has an element which is segregated into the crystal grain boundary to prevent a material of the antiferromagnetic layer from diffusing.

摘要翻译： 磁阻效应器件包括由铁磁材料形成的磁化自由层，由铁磁材料形成并具有晶界的磁化固定层，设置在磁化自由层和磁化固定层之间的非磁性层，以及反铁磁层 设置在与非磁性层的表面相对的磁化固定层的一个表面上。 磁化固定层具有分隔成晶界的元素，以防止反铁磁层的材料扩散。

公开(公告)号：US20080291585A1

公开(公告)日：2008-11-27

申请号：US11844069

申请日：2007-08-23

申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/33

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

公开(公告)号：US20080114043A1

公开(公告)日：2008-05-15

申请号：US11665966

申请日：2005-10-21

申请人： Shigeki Yamamoto ,  Tsutomu Shiroya ,  Michiaki Kadode ,  Toru Maruyama ,  Kousuke Tani ,  Toshihiko Nagase

发明人： Shigeki Yamamoto ,  Tsutomu Shiroya ,  Michiaki Kadode ,  Toru Maruyama ,  Kousuke Tani ,  Toshihiko Nagase

IPC分类号： A61K31/427 ,  A61P11/00 ,  C07D277/02

CPC分类号： A61K31/427 ,  A61K31/00 ,  A61K45/06 ,  C07D417/12

摘要： A medicinal composition for inhalation containing a continuous-release type prodrug of an EP2 agonist topically exhibits a prolonged bronchodilating and antiinflammatory effects. Namely, the medicinal composition for inhalation containing a continuous-release type prodrug of an EP2 agonist is useful as a safe preventive and/or a remedy for respiratory diseases (for example, asthma, pulmonary injury, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, adult respiratory distress syndrome, cystic fibrosis, pulmonary hypertension or the like) without causing any systemic effect such as lowering blood pressure. Thus, a safe and useful remedy for respiratory diseases is provided.

摘要翻译： 含有EP2激动剂的连续释放型前药的用于吸入的药物组合物局部显示出延长的支气管扩张和抗炎作用。 即，含有EP2激动剂的连续释放型前药的吸入药物组合物可用作呼吸系统疾病的安全预防和/或补救措施（例如，哮喘，肺损伤，肺纤维化，肺气肿，支气管炎，慢性 阻塞性肺疾病，成人呼吸窘迫综合征，囊性纤维化，肺动脉高压等），而不引起诸如降低血压的全身作用。 因此，提供了一种安全有效的呼吸系统疾病补救措施。