公开(公告)号：US06362076B1

公开(公告)日：2002-03-26

申请号：US09295296

申请日：1999-04-20

申请人： Yukio Inazuki ,  Hiroji Aga ,  Norihiro Kobayashi ,  Kiyoshi Mitani

发明人： Yukio Inazuki ,  Hiroji Aga ,  Norihiro Kobayashi ,  Kiyoshi Mitani

IPC分类号： H01L21324

CPC分类号： H01L21/3247 ,  H01L21/76251 ,  H01L21/76254

摘要： There is disclosed a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but is subjected to heat treatment in a reducing atmosphere containing hydrogen after a bonding heat treatment, a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but subjected to heat treatment in a reducing atmosphere containing hydrogen after delaminating heat treatment, and a SOI wafer fabricated by the methods. There are provided a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination is removed and surface roughness is improved without polishing, so that uniform thickness of the SOI layer can be achieved, and to simplify the process therefor.

摘要翻译： 公开了一种通过氢离子分层方法制造SOI晶片的方法，其中SOI层的表面未被研磨，但在接合热处理后在含氢的还原气氛中进行热处理，制造SOI的方法 晶片，其中SOI层的表面未经抛光但在分层热处理后的含氢还原气氛中进行热处理，以及通过该方法制造的SOI晶片。 提供了一种通过氢离子分层方法制造SOI晶片的方法，其中去除了分层之后残留在SOI层表面上的损伤层，并且在没有抛光的情况下提高了表面粗糙度，使得SOI层的均匀厚度可以 实现并简化其过程。

公开(公告)号：US6140210A

公开(公告)日：2000-10-31

申请号：US159856

申请日：1998-09-24

申请人： Hiroji Aga ,  Kiyoshi Mitani ,  Yukio Inazuki

发明人： Hiroji Aga ,  Kiyoshi Mitani ,  Yukio Inazuki

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

CPC分类号： H01L21/76251 ,  H01L21/76254

摘要： In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

摘要翻译： 在制造SOI晶片的方法中，在两个硅晶片中的至少一个的表面上形成氧化物膜; 将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中，以便在晶片内形成微小的气泡层（封闭层）; 离子注入硅晶片叠置在另一个硅晶片上，使得离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 为了形成薄膜以获得SOI晶片，进行热处理，以便在使用微细气泡层作为分层平面的情况下使离子注入的晶片的一部分分层。 在该方法中，通过气相蚀刻将由此获得的SOI晶片的分层表面的缺陷层去除至200nm以上的深度，然后进行镜面抛光。 因此，所获得的SOI晶片具有极低的缺陷水平和高的厚度均匀性。

公开(公告)号：US07037625B2

公开(公告)日：2006-05-02

申请号：US10179969

申请日：2002-06-26

申请人： Hideo Kaneko ,  Yukio Inazuki ,  Tetsushi Tsukamoto ,  Satoshi Okazaki

发明人： Hideo Kaneko ,  Yukio Inazuki ,  Tetsushi Tsukamoto ,  Satoshi Okazaki

IPC分类号： G03F1/00

CPC分类号： G03F1/58 ,  B32B18/00 ,  C04B35/16 ,  C04B35/58007 ,  C04B35/58042 ,  C04B35/597 ,  C04B2235/9653 ,  C04B2237/34 ,  C04B2237/36 ,  C04B2237/704 ,  G03F1/32

摘要： A phase shift mask blank is composed of a transparent substrate and a phase shift film thereon. The phase shift film is made of at least two types of layer stacked in alternation, each type having a different composition and containing at least one element selected from among metals, silicon, oxygen and nitrogen. The alternately layered film enables a high-quality phase shift mask blank having improved chemical resistance to be achieved.

公开(公告)号：US06733930B2

公开(公告)日：2004-05-11

申请号：US10073415

申请日：2002-02-13

申请人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

发明人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/80

摘要： In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.

摘要翻译： 在透明基板上包括遮光膜和抗反射膜的光掩模坯料中，遮光膜和抗反射膜由含有氧，氮和碳的铬基材料形成，使得碳含量逐步降低或 从表面侧连续地朝向基板。 可以以受控的速率蚀刻光掩模坯料以产生垂直的壁。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模具有均匀的膜性质，并且有助于具有更大密度和更精细特征尺寸的半导体IC的微细加工。

公开(公告)号：US06503669B2

公开(公告)日：2003-01-07

申请号：US09783322

申请日：2001-02-15

申请人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

发明人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/68 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/155 ,  C23C14/0057 ,  C23C14/06 ,  G03F1/50

摘要： A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.

摘要翻译： 光掩模坯料在透明衬底上具有至少一层铬基膜。 碳氧化铬（CrCO）或氮氧化铬碳化铬（CrCON）的铬基膜通过使用含有O，N或C的铬或铬作为靶的反应溅射技术形成，并且将二氧化碳气体和惰性气体的混合物作为 溅射气体。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模的质量在基板平面内具有高均匀性，并且在制造期间易于控制。

公开(公告)号：US06503668B2

公开(公告)日：2003-01-07

申请号：US09757615

申请日：2001-01-11

申请人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

发明人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26

摘要： A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.

摘要翻译： 相移掩模空白在透明基板上具有MoSiOC或MoSiONC的相移膜，并且可选地，在相移膜上具有铬基遮光膜，铬基抗反射膜或两者的多层组合。 包括通过使用含有二氧化碳的溅射气体的反应溅射技术沉积MoSi基相变膜的制造方法产生质量的相移掩模坯料和相移掩模，具有在制造过程中面内均匀性和易于控制的优点。

公开(公告)号：US5180554A

公开(公告)日：1993-01-19

申请号：US737121

申请日：1991-07-29

申请人： Toru Yamaguchi ,  Yukio Inazuki ,  Hideo Nakazawa

发明人： Toru Yamaguchi ,  Yukio Inazuki ,  Hideo Nakazawa

IPC分类号： B01D5/00 ,  B01D53/26

CPC分类号： B01D5/009 ,  B01D5/0084 ,  B01D53/26

摘要： A method of cleaning atmosphere gas used in manufacturing high-purity fine particles of reactive metals comprises the steps of: letting the moisture existing in the atmosphere gas condense into dew droplets using a cryogenic cooling medium; removing the moisture defined by the dew droplets through dissociation by letting it react with metallic Na that has been brought into contact with the dew droplets; generating a vapor of metallic Na in the atmosphere gas so as to remove the moisture still persisting in the atmosphere gas; further removing through dissociation the moisture still persisting in the atmosphere gas by letting it react with Na vapor that has been generated and dispersed into the atmosphere gas; letting the atmosphere gas cleaned of moisture come into contact with black barium powder; and detecting the presence of moisture in the atmosphere gas through a change in color of the black barium powder. The apparatus for practicing the method comprises two devices: one is a Na vapor generator and the other is a tract amount moisture detector.

摘要翻译： 用于制造高纯度活性金属微粒的气氛气体的清洗方法包括以下步骤：使用低温冷却介质使存在于大气中的水分冷凝成露点; 通过使其与已经与露滴接触的金属Na反应而通过解离除去由露滴限定的水分; 在气氛气体中产生金属Na的蒸气，以去除仍然存在于气氛气体中的水分; 进一步通过解离使大气中仍然存在的水分与通过生成并分散到大气中的Na蒸气反应来进行解离; 使气氛气体清洁的水分与黑色钡粉接触; 并通过黑色钡粉末的颜色变化来检测气氛气体中的水分的存在。 用于实施该方法的装置包括两个装置：一个是Na蒸气发生器，另一个是管道量水分检测器。

公开(公告)号：US4971258A

公开(公告)日：1990-11-20

申请号：US378531

申请日：1989-07-11

申请人： Toru Yamaguchi ,  Yukio Inazuki ,  Hideo Nakazawa

发明人： Toru Yamaguchi ,  Yukio Inazuki ,  Hideo Nakazawa

IPC分类号： B22F9/04 ,  C01B31/30 ,  C22C1/04

CPC分类号： B22F9/04 ,  C01B31/303 ,  C22C1/0458 ,  Y10S241/14 ,  Y10S505/894

摘要： A method of making high-purity fine particles of reactive metals, reactive especially in terms of their inclination to form hydroxides, comprises the steps of: preparing an inert gas atmosphere within which to manufacture the particles; reducing the moisture remaining in the inert gas atmosphere to an extremely low level; pulverizing the reactive metal within the moisture-free inert gas atmosphere; and collecting and sealing the product particles of reactive metal in a storage container in the same moisture-free inert gas atmosphere. The vessel for containing the inert gas atmosphere comprises: a hermetically sealable vessel capable of maintaining the inert gas atmosphere; a pair of rubber gloves for carrying out manual operations in the vessel under the inert gas atmosphere; a cryogenic cooling device attached to one wall of the vessel for condensing away the moisture remaining in the inert gas atmosphere into dew droplets; and an accumulator for equalizing the inner pressure of the vessel with the ambient atmospheric pressure.

公开(公告)号：US08304146B2

公开(公告)日：2012-11-06

申请号：US12687539

申请日：2010-01-14

申请人： Shinichi Igarashi ,  Hideo Kaneko ,  Yukio Inazuki ,  Kazuhiro Nishikawa

发明人： Shinichi Igarashi ,  Hideo Kaneko ,  Yukio Inazuki ,  Kazuhiro Nishikawa

IPC分类号： G03F1/26

CPC分类号： G03F1/80 ,  G03F1/14 ,  G03F1/26 ,  G03F1/32

摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.

摘要翻译： 通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量 所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / Cl比例用含氧氯气对所述毛坯进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层， 屏蔽膜。

公开(公告)号：US06589699B2

公开(公告)日：2003-07-08

申请号：US09840097

申请日：2001-04-24

申请人： Hideo Kaneko ,  Yukio Inazuki ,  Satoshi Okazaki

发明人： Hideo Kaneko ,  Yukio Inazuki ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/54

摘要： A photomask blank comprising a transparent substrate on which are formed at least one light-shielding film and at least one antireflective film minimizes film stress and eliminates substrate warp following deposition of the light-shielding film and the antireflective film, when each film is composed of a CrCO layer, a CrCON layer, or a combination of CrCO and CrCON layers. The photomask blank can be accurately patterned without distortion to give a photomask.

摘要翻译： 一种光掩模坯料，其中形成有至少一个遮光膜和至少一个抗反射膜的透明基板使膜应力最小化，并且当每个膜由遮光膜和抗反射膜构成时，消除了在遮光膜和抗反射膜沉积之后的基板翘曲 CrCO层，CrCON层或CrCO和CrCON层的组合。 光掩模坯料可以精确地图案化而不变形，从而产生光掩模。