摘要:
A method of manufacturing a precision glass sphere employed as a glass material (preform) in the molding of optical elements such as lenses, where the precision glass sphere that has been preformed with good weight precision and has an outer surface free of optically nonuniform layers. A method of manufacturing optical glass elements employing this precision glass sphere.
摘要:
A developing apparatus having a developer carrying member for carrying a developer thereon and developing an electrostatic image formed on an image bearing member with a developer, a developer layer thickness regulating member provided in contact with the developer carrying member for regulating the thickness of the layer of the developer carried on the developer carrying member, and an electrically conductive particle provided in the portion of contact between the developer carrying member and the developer layer thickness regulating member, in a state in which the developer does not exist between the developer carrying member and the developer layer thickness regulating member.
摘要:
A display device has a pixel array part having display elements provided inside of pixels formed in vicinity of cross points of signal lines and scanning lines aligned in matrix form; image capture circuits provided corresponding to the display elements, each including an optical sensor which picks up image at prescribed range of an imaging subject; and an image capture processing unit which generates ultimate image capture data based on result of having picked up images a plurality of times while changing image capture condition except for display color, with respect to each of M kinds of display colors.
摘要:
A semiconductor device includes a semiconductor substrate, a gate insulating layer, a gate electrode structure and a side wall structure. The gate insulating layer is formed on the semiconductor substrate. The gate electrode structure is formed on the gate insulating layer, and includes a lower gate electrode layer and a cap gate layer. The side wall structure includes a nitride side wall spacer, and an oxide layer formed between the semiconductor substrate and the nitride side wall spacer and between the lower gate electrode layer and the nitride side wall spacer. A thickness of the oxide layer is greater than a thickness of the gate insulating layer, so as to prevent diffusion of nitrogen from the nitride side wall spacer to the semiconductor substrate. A height of the gate electrode structure is substantially equal to a height of the side wall structure after completion of the semiconductor device.
摘要:
Refresh of memory cells is performed periodically by a refresh timer, and collision between memory access and memory refresh is avoided. When memory access occurs, an F/F 163 is set by a one shot pulse from an OS circuit 161, a memory access request is inputted to a memory accessing pulse generator circuit 171 through a NOR gate 167, and a latch control signal LC and an enable signal REN are outputted. When a refresh request from the refresh timer is inputted to an AND gate 168 during the memory access, the output of the NOR gate 167 is at the “L” level, and the refresh request is blocked by the AND gate 168. Thereafter, at the time when the latch control signal LC is turned into the “L” level, F/Fs 163, 164 and 165 are reset, the output of the NOR gate 167 is turned into the “H” level, the refresh request is inputted to a refreshing pulse generator circuit 170, and a refresh enable signal RERF is outputted.
摘要翻译:通过刷新定时器周期性地执行存储器单元的刷新,并避免存储器访问和存储器刷新之间的冲突。 当存储器访问发生时,通过来自OS电路161的单触发脉冲设置F / F 163,通过NOR门167将存储器访问请求输入到存储器访问脉冲发生器电路171,以及锁存控制信号LC和 输出使能信号REN。 当在存储器访问期间来自刷新定时器的刷新请求被输入到与门168时,或非门167的输出处于“L”电平,刷新请求由与门168阻止。此后, 当锁存控制信号LC变为“L”电平时,F / F 163,164和165被复位,或非门167的输出变成“H”电平,刷新请求被输入到 输出刷新脉冲发生器电路170和刷新使能信号RERF。
摘要:
A boot structure fitting into an axial component to protect from wrong environment including outside dust. Said boot has a pair of annular grooves and an annular lip between said pair of annular grooves on inner surface of said boot. Said annular lip is formed so that the annular lip top is not projected from inner surface to centerline of the boot. An annular protuberance means between said boot and clamping means, through which clamping force from said clamping means is exerted in concentration to said annular lip so that said annular lip is elastically deformed and pushed to outside of said axial component. Therefore, the axial component enables to be inserted into the boot without interference between the annular lip and the axial component. Furthermore, the annular lip becomes to be free from damage by interference between the annular lip and the axial component.
摘要:
An electromagnetic valve comprises a case having a cylindrical portion, a yoke having a large diameter portion and a small diameter portion, and a sleeve having at least two ports and receiving a valve member therein so as to perform reciprocating motion. The large diameter portion of the yoke is fluid-tightly pressed into the inner circumferential surface of the cylindrical portion of the case, and the inner circumferential surface of the sleeve is fluid-tightly pressed onto the outer circumferential surface of the small diameter portion of the yoke.
摘要:
A brake disk having a disk body formed of a titanium alloy, and inner and outer friction members formed of a stainless steel and bonded to opposite surfaces of the disk body by a brazing method is disclosed. The friction members can be simply bonded to the opposite surfaces of the disk body in a manner that provides a lightweight brake disk while simultaneously suppressing cost.
摘要:
A display driving method drives a display to make a gradation display on a screen of the display depending on a length of a light emission time in each of sub fields forming 1 field, where 1 field is a time in which an image is displayed, N sub fields SF1 through SFN form 1 field, and each sub field includes an address display-time in which a wall charge is formed with respect to all pixels which are to emit light within the sub field and a sustain time which is equal to the light emission time and determines a luminance level. The display driving method includes the steps of setting the sustain times of each of the sub fields approximately constant within 1 field, and displaying image data on the display using N+1 gradation levels from a luminance level 0 to a luminance level N.
摘要:
Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.