Low cost and low dishing slurry for polysilicon CMP
    62.
    发明授权
    Low cost and low dishing slurry for polysilicon CMP 失效
    用于多晶硅CMP的低成本和低磨损浆料

    公开(公告)号:US07199056B2

    公开(公告)日:2007-04-03

    申请号:US10360388

    申请日:2003-02-06

    IPC分类号: H01L21/302

    摘要: Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

    摘要翻译: 提供了用于将低凹陷平坦化基板表面的方法和组合物。 本发明的方面提供使用包含选自氧化铝和二氧化铈的研磨剂的组合物和用于底物的化学机械平面化以除去多晶硅的表面活性剂的方法。

    Apparatus for conditioning processing pads
    63.
    发明授权
    Apparatus for conditioning processing pads 有权
    用于调理加工垫的装置

    公开(公告)号:US07182680B2

    公开(公告)日:2007-02-27

    申请号:US11102052

    申请日:2005-04-08

    IPC分类号: B24B53/00

    CPC分类号: B24B53/017 B24B53/12

    摘要: Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force as well as to oscillate the pad conditioner. Further means may be provided to vary the downward force along the length of the pad conditioner. In one embodiment, a plurality of actuators may be coupled to a top surface of the member and adapted to selectively provide an independently controllable force against the member to finely control the conditioning profile.

    摘要翻译: 提供了一种用于调理处理垫的柔性垫调节器的实施例。 垫调节器包括具有用于调理处理垫的研磨底面的弧形构件。 提供装置以施加向下的力以及使垫调节器振荡。 可以提供另外的装置来改变沿衬垫调节器的长度的向下的力。 在一个实施例中,多个致动器可以联接到构件的顶表面并且适于选择性地提供抵靠构件的独立可控的力以精细地控制调节轮廓。

    Method for adjusting substrate processing times in a substrate polishing system
    64.
    发明授权
    Method for adjusting substrate processing times in a substrate polishing system 有权
    在基板研磨系统中调整基板处理时间的方法

    公开(公告)号:US07175505B1

    公开(公告)日:2007-02-13

    申请号:US11328959

    申请日:2006-01-09

    IPC分类号: B24B49/00

    摘要: Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.

    摘要翻译: 本发明的方面包括可用于调整基板处理系统中的处理时间的方法和装置。 在本发明的一个实施例中,采用基板在其中一个抛光台中的基板的预处理厚度测量。 然后在抛光系统中处理基板达预定的处理时间。 在基板位于一个抛光站中时,进行后处理厚度测量。 基于预处理和后处理测量以及预定处理时间计算去除率。 基于用于生产基板的后续处理的去除速率来调整一个或多个抛光站的处理时间。

    Planarized copper cleaning for reduced defects
    65.
    发明授权
    Planarized copper cleaning for reduced defects 失效
    平面化铜清洁减少缺陷

    公开(公告)号:US07104267B2

    公开(公告)日:2006-09-12

    申请号:US09727133

    申请日:2000-11-29

    IPC分类号: H01L21/302

    摘要: A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.

    摘要翻译: 一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法,该方法包括施加包含一种或多种螯合剂的组合物,pH调节剂以产生约3 约11,去离子水,然后涂上缓蚀剂溶液。 组合物还可以包含还原剂和/或缓蚀剂。 该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

    Method of controlling carrier head with multiple chambers
    66.
    发明授权
    Method of controlling carrier head with multiple chambers 有权
    用多个腔室控制载具头的方法

    公开(公告)号:US06896584B2

    公开(公告)日:2005-05-24

    申请号:US10666003

    申请日:2003-09-17

    摘要: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the outer portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

    摘要翻译: 具有连接到基座以限定第一室,第二室和第三室的柔性构件的承载头。 柔性构件的下表面提供了具有与第一腔室相关联的内部部分的基底接收表面,围绕内部部分并与第二腔室相关联的基本上环形的中间部分,以及围绕中间部分和相关联的基本上环形的外部部分 与第三个房间。 外部部分的宽度可以明显小于中间部分的宽度。 承载头还可以包括连接到驱动轴的凸缘和将凸缘枢转地连接到基座的万向架。

    Pad cleaning for a CMP system
    67.
    发明授权
    Pad cleaning for a CMP system 失效
    CMP系统的垫清洁

    公开(公告)号:US06669538B2

    公开(公告)日:2003-12-30

    申请号:US09512745

    申请日:2000-02-24

    IPC分类号: B24B100

    CPC分类号: B24B53/017

    摘要: The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

    摘要翻译: 本发明通常提供一种用于在衬底处理系统中清洁抛光垫,例如固定研磨垫的系统和装置。 在一个实施例中,该系统包括一个或多个喷嘴,其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。 喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。 该系统可以包括压力源以产生足够的流体压力,该流体压力显着高于可从设施设施获得的典型流体压力。

    Carrier head with a flexible membrane
    68.
    发明授权
    Carrier head with a flexible membrane 有权
    带头的柔性膜

    公开(公告)号:US06506104B2

    公开(公告)日:2003-01-14

    申请号:US09908868

    申请日:2001-07-18

    IPC分类号: B24B2900

    摘要: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the cuter portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

    摘要翻译: 具有连接到基座以限定第一室,第二室和第三室的柔性构件的承载头。 柔性构件的下表面提供了具有与第一腔室相关联的内部部分的基底接收表面,围绕内部部分并与第二腔室相关联的基本上环形的中间部分,以及围绕中间部分和相关联的基本上环形的外部部分 与第三个房间。 切割部分的宽度可以明显小于中间部分的宽度。 承载头还可以包括连接到驱动轴的凸缘和将凸缘枢转地连接到基座的万向架。

    Planarized Cu cleaning for reduced defects
    69.
    发明授权
    Planarized Cu cleaning for reduced defects 失效
    平面化的Cu清洁,减少缺陷

    公开(公告)号:US06432826B1

    公开(公告)日:2002-08-13

    申请号:US09450479

    申请日:1999-11-29

    IPC分类号: H01L21302

    摘要: Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.

    摘要翻译: 通过使用包含去离子水,酸和氢氧化铵和/或胺的清洁组合物,在CMP和阻隔层去除之后,通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。 实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面,在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸,氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。