AMPLIFY DEVICE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20250105804A1

    公开(公告)日:2025-03-27

    申请号:US18539131

    申请日:2023-12-13

    Inventor: Po-Yen Ho

    Abstract: An amplify device and a semiconductor device are provided in the disclosure. The amplify device includes an amplify unit, a radio frequency signal combination circuit, a first conductive wire and a second conductive wire. The first conductive wire is coupled between an output end of the amplify unit and a first input end of the radio frequency signal combination circuit. The second conductive wire is coupled between the output end of the amplify unit and a second input end of the radio frequency signal combination circuit. Wherein, a length of the first conductive wire is different from a length of the second conductive wire.

    Radio frequency amplifier and bias circuit

    公开(公告)号:US12224720B2

    公开(公告)日:2025-02-11

    申请号:US17474055

    申请日:2021-09-14

    Abstract: A radio frequency (RF) amplifier and a bias circuit are provided. The RF amplifier includes an amplifier, a first inductive-capacitive resonance circuit, and a first bias circuit. The amplifier includes an input terminal configured to receive an incoming RF signal through a first RF path. The first inductive-capacitive resonance circuit includes a first terminal coupled to a first reference voltage. A second terminal of the first inductive-capacitive resonance circuit is coupled to the first RF path. In response to the first reference voltage being at a first reference level, the RF amplifier is enabled; in response to the first reference voltage being at a second reference level, the RF amplifier is disabled. The first bias circuit includes a first terminal configured to be coupled to the first reference voltage and a second terminal coupled to the input terminal of the amplifier to provide a first direct current (DC) component.

    Semiconductor device for enhancing quality factor of inductor and method of forming the same

    公开(公告)号:US12176385B2

    公开(公告)日:2024-12-24

    申请号:US17990733

    申请日:2022-11-20

    Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

    Amplifier circuit having adjustable gain

    公开(公告)号:US12113495B2

    公开(公告)日:2024-10-08

    申请号:US17499831

    申请日:2021-10-12

    CPC classification number: H03F3/505 H03F3/45179 H03F1/12 H03F2200/387

    Abstract: An amplifier circuit having an adjustable gain is provided. The amplifier circuit includes an input terminal, an output terminal, an amplifier, and an attenuation circuit. The input terminal receives an input signal, which is in turn received by an input terminal of the amplifier. An output terminal of the amplifier outputs the input signal that is amplified. The attenuation circuit is coupled between the output terminal of the amplifier and the output terminal to provide a plurality of attenuation to the input signal that is amplified and generate a first attenuation signal, or between the input terminal and the output terminal to provide the plurality of attenuations to the input signal and generate a second attenuation signal. A difference between an impedance value of the input terminal of the attenuation circuit and an impedance value of the output terminal of the attenuation circuit is within a predetermined range.

    Filter integrated circuit
    66.
    发明授权

    公开(公告)号:US12107565B2

    公开(公告)日:2024-10-01

    申请号:US17521860

    申请日:2021-11-09

    CPC classification number: H03H9/542 H03H7/38 H03H9/125 H03H9/17

    Abstract: A filter integrated circuit, including an acoustic wave filter chip and a matching circuit, is provided. The acoustic wave filter chip is covered upon a substrate. The matching circuit is disposed on the substrate to provide matching impedance to the acoustic wave filter chip. A first pad and a second pad of the matching circuit are respectively connected to a first signal terminal and a second signal terminal of the acoustic wave filter chip. First terminals of a first coil inductor and a second coil inductor of the matching circuit are respectively connected to the first pad and the second pad of the substrate. The first coil inductor is adjacent to the second coil inductor, so that mutual inductance and parasitic capacitance are formed, so that the matching circuit and the acoustic wave filter chip jointly generate a transmission zero point located in a triple fundamental frequency range.

    RADIO FREQUENCY SWITCH CIRCUIT
    67.
    发明公开

    公开(公告)号:US20240305294A1

    公开(公告)日:2024-09-12

    申请号:US18330380

    申请日:2023-06-07

    Inventor: Ching-Yao Pai

    CPC classification number: H03K17/693 H03K17/162 H03K19/00361

    Abstract: A radio frequency switch circuit includes a series circuit. The series circuit includes a first series connection group and a second series connection group. The first series connection group includes a plurality of first transistors. The second series connection group includes a plurality of second transistors. Control terminals of the first transistors are all coupled to a first control node. Control terminals of the second transistors are all coupled to a second control node. When an electrostatic discharge event occurs, a voltage at the first control node is different from a voltage at the second control node. In a normal operation state, a switch state of the first series connection group and a switch state of the second series connection group are the same as each other.

    Radar apparatus and signal processing method thereof

    公开(公告)号:US12066516B2

    公开(公告)日:2024-08-20

    申请号:US17472679

    申请日:2021-09-12

    Inventor: Hsiang-Feng Chi

    Abstract: A radar apparatus includes a transmitting analog front-end circuit, a plurality of antenna ports, a switching controller, a switching circuit, and a receiving analog front-end circuit. The transmitting analog front-end circuit generates a transmitting signal according to a carrier wave signal. A frequency of the carrier wave signal changes with time during a frequency sweep period of the carrier wave signal. The antenna ports are respectively configured to receive an echo signal corresponding to the transmitting signal. The switching controller is coupled to the transmitting analog front-end circuit and configured to generate a control signal according to the frequency sweep period of the carrier wave signal. The switching circuit is coupled to the antenna ports and the switching controller, configured to select one of the antenna ports to receive the echo signal according to the control signal, and coupled to the receiving analog front-end circuit.

    Amplifier circuit
    69.
    发明授权

    公开(公告)号:US12040757B2

    公开(公告)日:2024-07-16

    申请号:US17378802

    申请日:2021-07-19

    Abstract: An amplifier circuit includes a first amplifier and a second amplifier. The first amplifier receives a first signal and generates a first amplification signal accordingly. The second amplifier receives a second signal and generates a second amplification signal accordingly. The first signal is related to a first frequency band, and the second signal is related to a second frequency band different from the first frequency band. When one of the first amplifier and the second amplifier is in use, the other one of the first amplifier and the second amplifier is unused. The first amplifier and second amplifier are coupled to a reference voltage terminal through a common node. The first amplifier includes a switch coupled between the common node and a stage of the first amplifier, and the switch can be controlled for reducing the loading effect caused by the first amplifier on the second amplifier.

    RADIO-FREQUENCY CIRCUIT AND BIAS CIRCUIT
    70.
    发明公开

    公开(公告)号:US20240223133A1

    公开(公告)日:2024-07-04

    申请号:US18202963

    申请日:2023-05-29

    CPC classification number: H03F1/30 H03F3/245 H03F2200/451

    Abstract: A radio-frequency circuit can include a power amplifier, a first bias circuit and a second bias circuit. The power amplifier can include an input terminal used to receive a radio-frequency signal, and an output terminal used to output an amplified radio-frequency signal. The first bias circuit can include a first output terminal coupled to the input terminal of the power amplifier through a common node. The second bias circuit can include a second output terminal and a current adjustment circuit, where the second output terminal can be coupled to the common node, and the current adjustment circuit can include a transistor. The transistor can include a first terminal coupled to the second output terminal, a second terminal used to receive a reference voltage, and a control terminal.

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