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    Method of and apparatus for stress detection
    65.
    发明授权
    Method of and apparatus for stress detection 失效
    应力检测方法及装置

    公开(公告)号：US5659139A

    公开(公告)日：1997-08-19

    申请号：US605438

    申请日：1996-02-22

    Applicant: Seiji Okada ,  Toshimi Okazaki

    Inventor： Seiji Okada ,  Toshimi Okazaki

    IPC: G01L1/10 ,  G01B7/16 ,  G01L1/18 ,  G01P15/097 ,  G01P15/10

    CPC classification number: G01P15/097 ,  G01B7/16 ,  G01L1/183

    Abstract: A stress is detected by the utilization of a semiconductor equipped with a beam oscillator which is driven to generate a compound oscillation comprising a plurality of component oscillations with different component frequencies through the steps of detecting separately component amplitudes of the compound oscillation for the respective component frequencies, standardizing power spectra of the component amplitudes with theoretically obtained reference power spectra respectively, and determining a stress generated in the beam oscillator based on a mean stress value of stress values for the standardized power spectra from relations between power spectrum and stress value previously provided for the respective component amplitudes.

    Abstract translation: 通过利用配备有波束振荡器的半导体来检测应力，所述半导体振荡器被驱动以通过以下步骤来产生包括具有不同分量频率的多个分量振荡的复合振荡，所述步骤是针对各个分量频率分别检测复合振荡的分量幅度 分别用理论上获得的参考功率谱对标准化功率谱的分量幅度的功率谱进行标准化，并且根据功率谱和以前提供的应力值之间的关系，基于标准化功率谱的应力值的平均应力值，确定波束振荡器中产生的应力 各自的分量幅度。

    Reactionless single beam vibrating force sensor
    66.
    发明授权
    Reactionless single beam vibrating force sensor 失效
    无反应单梁振动力传感器

    公开(公告)号：US5450762A

    公开(公告)日：1995-09-19

    申请号：US320565

    申请日：1994-10-11

    Applicant: James R. Woodruff ,  David W. Wine

    Inventor： James R. Woodruff ,  David W. Wine

    IPC: G01L1/10 ,  G01L1/16 ,  G01L1/18 ,  G01L1/00

    CPC classification number: G01L1/162 ,  G01L1/106 ,  G01L1/183 ,  Y10S73/01

    Abstract: A reactionless single beam vibrating force transducer utilizes counterbalances at opposite ends of the beam that rotate in directions opposite to the ends of the vibrating beam to reduce rotational and normal forces transmitted to the end supports for the beam. The proportions of the counterbalances relative to the size of the beam may be chosen to reduce forces in a direction normal to the beam to zero at the expense of some rotational moments at the end of the beam support, or to reduce moments at the expense of some normal force. The relative amounts of residual rotational moments and normal force can be adjusted to suit particular applications. Flexures may also be utilized to reduce the rotational moments transferred to the beam support even further.

    Abstract translation: 无反应的单梁振动力传感器在梁的相对端处利用平衡，其在与振动梁的端部相反的方向上旋转，以减少传递到梁的端部支撑件的旋转和法向力。 可以选择平衡相对于梁的尺寸的比例，以将梁的垂直方向的力减小到零，这是以波束支撑端部的某些旋转力矩为代价的，或以牺牲 一些正常的力量。 可以调整残余转动力矩和法向力的相对量，以适应​​特定应用。 还可以使用弯曲来进一步减少传递到梁支撑件的旋转力矩。

    Dielectrically isolated resonant microsensors
    67.
    发明授权
    Dielectrically isolated resonant microsensors 失效
    介电隔离谐振微型传感器

    公开(公告)号：US5417115A

    公开(公告)日：1995-05-23

    申请号：US95343

    申请日：1993-07-23

    Applicant: David W. Burns

    Inventor： David W. Burns

    IPC: G01L1/10 ,  G01L1/18 ,  G01L9/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L29/84 ,  H04R17/02 ,  G01L11/00

    CPC classification number: H04R17/025 ,  G01L1/183 ,  G01L9/0019 ,  G01P15/0802 ,  G01P15/097 ,  G01P2015/0828

    Abstract: A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam fixed at both ends relative to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed at the bottom of a trough in the substrate directly beneath the flexure beam. A drive electrode and a piezoresistive element are supported by the beam, formed over a silicon nitride thin film layer deposited onto the top surface of the flexure beam. A second silicon nitride layer covers the drive electrode and piezoresistor, cooperating with the first silicon nitride layer to dielectrically encapsulate the drive electrode and piezoresistor. The silicon nitride further extends outwardly of the beam to a location between the polysilicon layer that contains the beam, and the cover, to isolate the cover from the flexure beam. A polysilicon film is applied over the upper silicon nitride layer as a passivation layer to protect the silicon nitride during gauge fabrication. The process for fabricating the gauge includes a sequence of applying the various polysilicon and silicon nitride layers by low pressure chemical vapor deposition, in combination with selective etching to define the flexure beam, electric circuit components and vacuum chamber.

    Abstract translation: 共振应变计包括硅衬底，相对于衬底的两端固定的多晶硅弯曲梁，以及与衬底配合的多晶硅刚性盖，以将挠曲梁封闭在密封的真空室内。 在盖上形成上部偏置电极，并且在弯曲梁正下方的基板的底部的底部形成下部偏置电极。 驱动电极和压阻元件由光束支撑，形成在沉积在挠曲束的顶表面上的氮化硅薄膜层上。 第二氮化硅层覆盖驱动电极和压电电阻器，与第一氮化硅层配合以介电地封装驱动电极和压敏电阻器。 氮化硅进一步从梁的外侧延伸到包含梁的多晶硅层与盖之间的位置，以将盖与弯曲梁隔离。 将多晶硅膜施加在上部氮化硅层上作为钝化层，以在量规制造期间保护氮化硅。 用于制造该量规的方法包括通过低压化学气相沉积施加各种多晶硅和氮化硅层的顺序，以及选择性蚀刻以限定挠曲束，电路部件和真空室。

    Magnetically driven vibrating beam force transducer
    68.
    发明授权
    Magnetically driven vibrating beam force transducer 失效
    磁驱动振动梁力传感器

    公开(公告)号：US4912990A

    公开(公告)日：1990-04-03

    申请号：US315964

    申请日：1989-02-27

    Applicant: Brian L. Norling

    Inventor： Brian L. Norling

    IPC: G01L1/10 ,  G01L1/18 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10

    CPC classification number: G01P15/097 ,  G01L1/183 ,  G01P15/0802 ,  Y10S73/01

    Abstract: A vibrating beam force transducer that can be realized in a silicon micromachined device such as a micromachined accelerometer. The transducer includes a beam having a longitudinal axis, and a drive circuit electrically coupled to the beam for causing the beam to oscillate at a resonant frequency that is a function of a force applied along the longitudinal beam axis. The drive circuit provides an electrical current to the beam, and the beam, or a conductive portion thereof, conducts the current along a path that includes an axial component parallel to the longitudinal axis. A magnetic field is created intersecting the axial component, such that the electric current interacts with the magnetic field to produce a force that causes the beam to oscillate at the resonant frequency. In a preferred embodiment, the transducer has a double ended tuning fork configuration, and the current path extends along one beam and back along the other beam.

    Abstract translation: 振动梁力传感器，其可以在诸如微机械加速度计的硅微加工装置中实现。 换能器包括具有纵向轴线的光束和电耦合到光束的驱动电路，用于使光束以以沿纵向光束轴线施加的力的函数的谐振频率振荡。 驱动电路为光束提供电流，并且光束或其导电部分沿着包括平行于纵向轴线的轴向分量的路径传导电流。 产生与轴向分量相交的磁场，使得电流与磁场相互作用以产生使光束以共振频率振荡的力。 在优选实施例中，换能器具有双端音叉配置，并且电流路径沿着一个光束延伸并且沿另一个光束向后延伸。

    Load sensors
    69.
    发明授权
    Load sensors 失效
    负载传感器

    公开(公告)号：US4503715A

    公开(公告)日：1985-03-12

    申请号：US464812

    申请日：1983-02-08

    Applicant: John C. Greenwood

    Inventor： John C. Greenwood

    IPC: G01L1/10 ,  G01L1/18

    CPC classification number: G01L1/183 ,  G01L1/10 ,  Y10S73/01

    Abstract: An electro-mechanical load sensor is in the form of a mechanical resonant system with electrostatically coupled electrodes. The mechanical system is formed from a silicon wafer by a selective etching process and comprises a filament of between two terminations 12 and 13 carrying transverse plates M.sub.1 and M.sub.2. Electrostatic (capacitive) coupling to plate electrodes E.sub.1, E.sub.2, E.sub.3 in a self-exciting circuit drives the system. The resonant frequency for angular S vibrations with plates M.sub.1 and M.sub.2 in anti-phase varies with applied load L and is thus a measure of this load.

    Abstract translation: 机电负载传感器是具有静电耦合电极的机械谐振系统的形式。 机械系统通过选择性蚀刻工艺由硅晶片形成，并且包括承载横向板M1和M2的两个端子12和13之间的细丝。 在自励电路中，静电（电容）耦合到平板电极E1，E2，E3驱动系统。 具有抗相位的板M1和M2的角度S振动的谐振频率随着施加的负载L而变化，因此是该负载的量度。

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