Abstract:
A resonator is suitable for reducing or suppressing a force transmitted by a vibrating portion of the resonator to a support part. To this end, the vibrating portion includes two extensions which are each meander shaped such that two segments of each extension have respective speed components that are oriented in opposite directions. Such a resonator, which is balanced, can advantageously be used within a rate gyro or a force sensor.
Abstract:
A physical quantity detecting device includes a vibrating element and a charge amplifier. The vibrating element includes a first detection electrode, a second detection electrode, a third detection electrode, and a fourth detection electrode. The first and fourth detection electrodes have the same electrical polarity, the second and third detection electrodes have the same electrical polarity, and the first and second detection electrodes have opposite electrical polarities. The first and fourth detection electrodes are connected to the charge amplifier, and the second and third detection electrodes are connected to the charge amplifier.
Abstract:
An illustrative example embodiment of a sensing device includes a force sensor that detects a force and provides an output indicative of the detected force. An acceleration sensor detects acceleration and provides an output indicative of the detected acceleration. A processor receives the output from the force sensor and the acceleration sensor. The processor provides an indication of a relationship between the detected force and the detected acceleration.
Abstract:
A high-temperature drive component for a double-ended tuning fork (DETF). The drive component attaches to a surface of at least one of the tines. The drive component includes at least one piezoelectric trace sandwiched at least partially between two electrical traces. At least one of the tines includes a doped silicon base with drive component located thereon. One of the electrical traces is electrically connected to the doped silicon base and the other is electrically isolated from the doped silicon base.
Abstract:
A piezoelectric sensor is fixed to a detection object and detects distortion of the detection object includes first and second principal surfaces, and extends in the lengthwise direction. The piezoelectric sensor includes a piezoelectric body whose polarization axis extends in a direction parallel or substantially parallel to the lengthwise direction, and first and second detecting electrodes that are provided on a surface of the piezoelectric body and that extend in a direction parallel or substantially parallel to the lengthwise direction. Distortion of the detection object is detected based on electric output corresponding to shear stress of the piezoelectric body.
Abstract:
A crystal unit includes: a crystal blank; an excitation electrode formed on the crystal blank and excites a main vibration of the crystal blank; a housing that accommodates the crystal blank; and a sub-vibration electrode formed on the housing and excites a sub-vibration of the crystal blank.And a method for inspecting a crystal unit, the method includes: generating a sub-vibration in a crystal blank by applying an input signal to a sub-vibration electrode formed on a housing, which accommodates the crystal blank, via external electrodes which are electrically coupled to the sub-vibration electrode and formed on the outer surface of the housing; obtaining an output of the crystal unit via the external electrodes; obtaining frequency characteristics of impedance between the external electrodes based on the output; and comparing the obtained frequency characteristics with the reference frequency characteristics indicating the quality of the crystal unit.
Abstract:
An oscillation piece includes a first oscillation arm and a second oscillation arm, a first base that connects ends of the first oscillation arm and the second oscillation arm on one side to each other and a second base that connects ends of the first oscillation arm and the second oscillation arm on the other side to each other, and weight films provided on each of the first oscillation arm and the second oscillation arm. The drive electrodes are disposed in positions where the amount of distortion produced in the first oscillation arm and the second oscillation arm is maximized, and the weight films are disposed in positions where the amount of distortion produced in the first oscillation arm and the second oscillation arm is minimized. The oscillation frequency of the oscillation piece can be precisely adjusted by removing part of the weight films.
Abstract:
Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.
Abstract:
A technique for detecting external force applied to a piezoelectric plate is provided. A crystal plate is cantilever-supported in a container. Excitation electrodes are formed on an upper face and lower face, respectively, of the crystal plate. A movable electrode is formed on the lower face side. A fixed electrode is provided on a bottom portion of the container facing the movable electrode. The excitation electrode on the upper face side and the fixed electrode are connected to an oscillation circuit. When the crystal plate bends by external force applied, capacitance between. A direction of the movable electrode along a length direction of the crystal plate is set to 30° to 60°, relative to a face orthogonal to an intended direction of the external force. The movable electrode and fixed electrode changes, and this capacitance change and a deformation of the crystal circuit.
Abstract:
A pressure sensor including: a MEMS resonator; a sweeping unit which sweeps a frequency of an excitation signal in a predetermined direction of sweeping, over a predetermined frequency range including a resonance frequency f0 of a vibrator in the MEMS resonator, while outputting the excitation signal to the MEMS resonator; an integrating unit which inputs a vibrating-state information signal as a characteristic amount indicative of a vibrating state of the vibrator from the MEMS resonator while the sweeping unit sweeps the frequency, integrates a plurality of the vibrating-state information signals at different frequencies of the excitation signal, and outputs the integrated value; and a conversion unit adapted to determine a pressure acting on the MEMS resonator, based on the integrated value.