OPTICAL MODULATOR
    62.
    发明申请
    OPTICAL MODULATOR 有权
    光学调制器

    公开(公告)号:US20060029319A1

    公开(公告)日:2006-02-09

    申请号:US10990383

    申请日:2004-11-18

    Inventor: Masaki Sugiyama

    CPC classification number: G02F1/2255 G02F2201/07 G02F2201/12

    Abstract: The present invention relates to an optical modulator capable of preventing a disconnection of an electrode and improving a discontinuity of a characteristic impedance while realizing a polarization inverting area and a ridge waveguide in a single optical modulator. In the optical modulator, a first electrode is composed of an inverting area electrode portion formed on an upper portion of one of first and second waveguides in the polarization inverting area, a non-inverting area electrode portion formed on an upper portion of the other one of the first and second waveguides in the other area, and a connection portion for making a connection between the inverting area electrode portion and the non-inverting area electrode portion at the boundary between the polarization inverting area and the other area. A supporting mechanism for supporting the connection portion of the first electrode is provided in a groove.

    Abstract translation: 本发明涉及一种在单个光调制器中实现极化反转区域和脊波导的同时能够防止电极断开并改善特性阻抗的不连续性的光调制器。 在光调制器中,第一电极由形成在偏振反转区域中的第一和第二波导中的一个的上部上的反转区域电极部分组成,另一个上部形成的非反相区域电极部分 的另一区域中的第一和第二波导的连接部分,以及用于在极化反转区域和另一区域之间的边界处在反相区域电极部分和非反相区域电极部分之间形成连接的连接部分。 用于支撑第一电极的连接部分的支撑机构设置在凹槽中。

    Multi-layer electro-optic polymer modulators with reduced optical coupling loss
    63.
    发明授权
    Multi-layer electro-optic polymer modulators with reduced optical coupling loss 失效
    具有降低的光耦合损耗的多层电光聚合物调制器

    公开(公告)号:US06895162B2

    公开(公告)日:2005-05-17

    申请号:US10370785

    申请日:2003-02-20

    Abstract: An electro-optic waveguide device, comprising (a) a first polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 μm to about 3.2 μm; (b) a first polymer clad having a refractive index of about 1.53 to about 1.61 and a thickness of about 1.0 μm to about 3.0 μm; (c) an electro-optic polymer core having a refractive index of about 1.54 to about 1.62 and a thickness of about 1.0 μm to about 3.0 μm; and (d) a second polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 μm to about 3.2 μm.

    Abstract translation: 一种电光波导装置,包括(a)第一聚合物缓冲包层,其折射率为约1.445至约1.505,厚度为约2.2μm至约3.2μm; (b)折射率为约1.53至约1.61且厚度为约1.0μm至约3.0μm的第一聚合物包层; (c)具有约1.54至约1.62的折射率和约1.0μm至约3.0μm的厚度的电光聚合物芯; 和(d)折射率为约1.445至约1.505且厚度为约2.2μm至约3.2μm的第二聚合物缓冲包层。

    Array substrate for IPS mode liquid crystal display device and method of fabricating the same
    64.
    发明申请
    Array substrate for IPS mode liquid crystal display device and method of fabricating the same 有权
    用于IPS模式液晶显示装置的阵列衬底及其制造方法

    公开(公告)号:US20050088601A1

    公开(公告)日:2005-04-28

    申请号:US10985908

    申请日:2004-11-12

    Applicant: Yun-Bok Lee

    Inventor: Yun-Bok Lee

    CPC classification number: G02F1/134363 G02F1/133711 G02F1/1368 G02F2201/07

    Abstract: In a method of forming an array substrate for in-plane switching liquid crystal display device a first metal layer is formed on a substrate and then patterned using a first mask so as to form a gate line having a gate electrode and a common line having a plurality of common electrodes. A gate insulation layer is formed on the substrate to cover the patterned first metal layer. A semiconductor layer is formed on the gate insulation layer using a second mask, wherein the semiconductor layer includes an active layer of pure amorphous silicon and an ohmic contact layer of impurity-doped amorphous silicon. A second metal layer is formed on the gate insulation layer to cover the semiconductor layer and then patterned using a third mask to form a data line having a source electrode, a pixel connecting line having a plurality of pixel electrodes, and a drain electrode that is spaced apart from the source electrode. A channel is formed by etching a portion of the ohmic contact layer between the source and drain electrodes. An alignment layer is formed over the substrate to cover the patterned second metal layer. The substrate having the alignment layer and the source and drain electrode is then thermal-treated in a furnace to cure the alignment layer and to anneal a thin film transistor.

    Abstract translation: 在形成面内切换液晶显示装置的阵列基板的方法中,在基板上形成第一金属层,然后使用第一掩模进行图案化,以形成具有栅电极和公共线的栅线 多个公共电极。 在基板上形成栅极绝缘层以覆盖图案化的第一金属层。 使用第二掩模在栅绝缘层上形成半导体层,其中半导体层包括纯非晶硅的有源层和杂质掺杂非晶硅的欧姆接触层。 在栅绝缘层上形成第二金属层以覆盖半导体层,然后使用第三掩模进行图案化,以形成具有源电极,具有多个像素电极的像素连接线和具有多个像素电极的漏电极的数据线, 与源电极间隔开。 通过蚀刻源极和漏极之间的欧姆接触层的一部分形成通道。 在衬底上形成取向层以覆盖图案化的第二金属层。 然后将具有取向层和源极和漏极的衬底在炉中热处理以固化取向层并退火薄膜晶体管。

    Buffer layer structures for stabilization of a lithium niobate device
    65.
    发明申请
    Buffer layer structures for stabilization of a lithium niobate device 有权
    用于稳定铌酸锂器件的缓冲层结构

    公开(公告)号:US20050047720A1

    公开(公告)日:2005-03-03

    申请号:US10602833

    申请日:2003-06-25

    CPC classification number: G02F1/035 G02F1/225 G02F2201/07 G02F2203/21

    Abstract: An optical waveguide device including an electro-optical crystal substrate having a top surface and a bottom surface; an optical waveguide path formed within a surface of the electro-optical crystal substrate; at least one electrode positioned above the optical waveguide path for applying an electric field to the optical waveguide path; and a silicon titanium oxynitride layer and a connecting layer for interconnecting the silicon titanium oxynitride layer to another surface of the electro-optical crystal substrate that is opposite to the surface in which the optical waveguide path is formed.

    Abstract translation: 一种光波导器件,包括具有顶表面和底表面的电光晶体基底; 形成在所述电光晶体基板的表面内的光波导路径; 位于所述光波导路径上方的用于向所述光波导路径施加电场的至少一个电极; 以及用于将硅氮氧化钛层与形成有光波导路径的表面相反的电光晶体基板的另一表面互连的连接层。

    Method of forming an array substrate for an in-plane switching liquid crystal display device having an alignment film formed directly on a thin film transistor
    66.
    发明授权
    Method of forming an array substrate for an in-plane switching liquid crystal display device having an alignment film formed directly on a thin film transistor 有权
    形成具有直接形成在薄膜晶体管上的取向膜的面内切换液晶显示装置的阵列基板的方法

    公开(公告)号:US06833896B2

    公开(公告)日:2004-12-21

    申请号:US10067845

    申请日:2002-02-08

    Applicant: Yun-Bok Lee

    Inventor: Yun-Bok Lee

    CPC classification number: G02F1/134363 G02F1/133711 G02F1/1368 G02F2201/07

    Abstract: In a method of forming an array substrate for in-plane switching liquid crystal display device a first metal layer is formed on a substrate and then patterned using a first mask so as to form a gate line having a gate electrode and a common line having a plurality of common electrodes. A gate insulation layer is formed on the substrate to cover the patterned first metal layer. A semiconductor layer is formed on the gate insulation layer using a second mask, wherein the semiconductor layer includes an active layer of pure amorphous silicon and an ohmic contact layer of impurity-doped amorphous silicon. A second metal layer is formed on the gate insulation layer to cover the semiconductor layer and then patterned using a third mask to form a data line having a source electrode, a pixel connecting line having a plurality of pixel electrodes, and a drain electrode that is spaced apart from the source electrode. A channel is formed by etching a portion of the ohmic contact layer between the source and drain electrodes. An alignment layer is formed over the substrate to cover the patterned second metal layer. The substrate having the alignment layer and the source and drain electrode is then thermal-treated in a furnace to cure the alignment layer and to anneal a thin film transistor.

    Abstract translation: 在形成面内切换液晶显示装置的阵列基板的方法中,在基板上形成第一金属层,然后使用第一掩模进行图案化,以形成具有栅电极和公共线的栅线 多个公共电极。 在基板上形成栅极绝缘层以覆盖图案化的第一金属层。 使用第二掩模在栅绝缘层上形成半导体层,其中半导体层包括纯非晶硅的有源层和杂质掺杂非晶硅的欧姆接触层。 在栅绝缘层上形成第二金属层以覆盖半导体层,然后使用第三掩模进行图案化,以形成具有源电极,具有多个像素电极的像素连接线和具有多个像素电极的漏电极的数据线, 与源电极间隔开。 通过蚀刻源极和漏极之间的欧姆接触层的一部分形成通道。 在衬底上形成取向层以覆盖图案化的第二金属层。 然后将具有取向层和源极和漏极的衬底在炉中热处理以固化取向层并退火薄膜晶体管。

    Suppression of high frequency resonance in an electro-optical modulator
    69.
    发明授权
    Suppression of high frequency resonance in an electro-optical modulator 有权
    在电光调制器中抑制高频共振

    公开(公告)号:US06646776B1

    公开(公告)日:2003-11-11

    申请号:US10065833

    申请日:2002-11-23

    CPC classification number: G02F1/2255 G02F1/0356 G02F2201/07 G02F2201/12

    Abstract: The invention relates to apparatus and methods for suppressing high frequency resonance in an electro-optical device. The electro-optical device includes an optical waveguide formed in the upper surface of a substrate. The device further includes a plurality of electrically floating electrode segments that are positioned on the substrate to intensify an electric field in the optical waveguide. The device also includes a plurality of electrically grounded electrode segments that are positioned on the substrate for prohibiting modal conversion and propagation of high order modes in the plurality of electrically grounded electrode segments and in the plurality of electrically floating electrode segments, thereby suppressing modal coupling to the substrate. The device further includes a buffer layer formed on the upper surface of the substrate and a driving electrode formed on an upper surface of the buffer layer for receiving an RF signal that induces the electric field in the optical waveguide.

    Abstract translation: 本发明涉及用于抑制电光装置中高频共振的装置和方法。 电光装置包括形成在基板的上表面中的光波导。 该器件还包括多个电浮动电极段,其位于衬底上以加强光波导中的电场。 该器件还包括多个电接地电极段,其位于衬底上,用于禁止在多个电接地电极段和多个电浮动电极段中的高阶模的模态转换和传播,从而抑制模式耦合 底物。 该器件还包括形成在衬底的上表面上的缓冲层和形成在缓冲层的上表面上的驱动电极,用于接收在光波导中引起电场的RF信号。

    Titanium-indiffusion waveguides
    70.
    发明授权
    Titanium-indiffusion waveguides 失效
    钛 - 不扩散波导

    公开(公告)号:US06567598B1

    公开(公告)日:2003-05-20

    申请号:US09419349

    申请日:1999-10-15

    Applicant: Lee J. Burrows

    Inventor: Lee J. Burrows

    Abstract: A method for fabricating titanium-indiffusion waveguides in optical modulators and other optical waveguide devices includes disposing titanium strips in a waveguide pattern on the surface of a crystalline substrate, such as lithium niobate or lithium tantalate, and indiffusing the titanium atoms into the crystalline substrate by pressurizing above ambient atmospheric pressure an oxygen gas atmosphere enclosing the crystalline substrate, heating in the oxygen gas atmosphere, maintaining temperature and pressure for an indiffusion period, and cooling to ambient temperature. A powder formed of the same chemical composition as the crystalline substrate may be introduced into the indiffusion process to limit the crystalline substrate from outgassing alkaline earth metal oxide during the indiffusion period. An indiffusion container that allows for crystalline substrates to be annealed in the presence of a powder without contaminating the substrate with the powder during the indiffusion process may be used. Waveguides manufactured in accordance with the method exhibit superior drift performance.

    Abstract translation: 在光学调制器和其它光波导器件中制造钛 - 不扩散波导的方法包括:在诸如铌酸锂或钽酸锂的晶体衬底的表面上以波导图形布置钛条,并且通过以下方式将钛原子分散到晶体衬底中 在环境大气压以上加压包围结晶基底的氧气气氛,在氧气气氛中加热,保持温度和压力达到扩散期,并冷却至环境温度。 可以将与晶体基板相同的化学成分形成的粉末引入到扩散过程中,以在扩散期间限制结晶底物从脱气的碱土金属氧化物。 可以使用在扩散过程中允许结晶基材在粉末存在下退火而不用粉末污染基材的扩散容器。 根据该方法制造的波导显示出优异的漂移性能。

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