公开(公告)号：US20060128151A1

公开(公告)日：2006-06-15

申请号：US11146538

申请日：2005-06-06

Applicant: Sang-Wook Ryu

Inventor： Sang-Wook Ryu

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76802 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/0274 ,  H01L21/31138

Abstract: Disclosed are a method for removing a photoresist layer and a method for forming a metal line using the same. The method for removing a photoresist pattern, including the steps of: forming a bottom layer on a substrate by using the photoresist pattern as a mask; and removing the photoresist pattern with use of a high density plasma (HDP) apparatus. The method for forming a metal line, including the steps of: preparing a semi-finished substrate including an inter-layer insulation layer; forming a photoresist pattern on the inter-layer insulation layer; forming an opening by etching the inter-layer insulation layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern by using a high density plasma (HDP) apparatus; and forming the metal line by filling the opening with a predetermined material.

Abstract translation: 公开了除去光致抗蚀剂层的方法和使用其形成金属线的方法。 一种去除光致抗蚀剂图案的方法，包括以下步骤：通过使用光致抗蚀剂图案作为掩模在基板上形成底层; 以及使用高密度等离子体（HDP）装置去除光致抗蚀剂图案。 一种形成金属线的方法，包括以下步骤：制备包括层间绝缘层的半成品衬底; 在层间绝缘层上形成光刻胶图形; 通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻层间绝缘层来形成开口; 通过使用高密度等离子体（HDP）装置去除光致抗蚀剂图案; 以及通过用预定材料填充开口来形成金属线。

公开(公告)号：US07051741B2

公开(公告)日：2006-05-30

申请号：US10094103

申请日：2002-03-08

Applicant: Li Li ,  Harlan Frankamp

Inventor： Li Li ,  Harlan Frankamp

IPC: H01L21/302

CPC classification number: H01L21/31138 ,  G03F7/427

Abstract: A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma-generating source. A gaseous material which includes a reducing agent is passed through the plasma-generating source to produce a plasma stream. The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

Abstract translation: 一种在制造半导体器件期间使用的抗蚀剂剥离方法。 其上形成有抗蚀剂材料的半导体衬底（例如硅晶片）位于与等离子体产生源连通的密封室中。 包含还原剂的气态材料通过等离子体产生源以产生等离子体流。 等离子体流在半导体衬底上被引导预定的时间以从半导体衬底去除抗蚀剂材料。 通过等离子体流在密封室中产生还原环境，其可以同时钝化和剥离抗蚀剂材料。

公开(公告)号：US20060046467A1

公开(公告)日：2006-03-02

申请号：US10927572

申请日：2004-08-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/4763

CPC classification number: H01L21/31133 ,  G03F7/427 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.

Abstract translation: 一种制造半导体器件的方法。 该方法包括在形成在衬底上的电介质层中形成通孔，用牺牲材料填充通孔和任选地介电层的表面，在牺牲材料上图案化第一光致抗蚀剂层以限定用于 半导体器件，去除第一光致抗蚀剂层而不影响牺牲材料，重新绘图牺牲材料上的第二光致抗蚀剂层以限定用于半导体器件的沟槽，形成沟槽，以及在沟槽之后完全去除第二光致抗蚀剂层和牺牲材料 形成了。

公开(公告)号：US20050284573A1

公开(公告)日：2005-12-29

申请号：US10874566

申请日：2004-06-24

Applicant: Fred Egley ,  Michael Kang ,  Anthony Chen ,  Jack Kuo ,  Hong Shih ,  Duane Outka ,  Bruno Morel

Inventor： Fred Egley ,  Michael Kang ,  Anthony Chen ,  Jack Kuo ,  Hong Shih ,  Duane Outka ,  Bruno Morel

IPC: B44C1/22 ,  C23C8/02 ,  C23C8/10 ,  C23F1/00 ,  G03F7/42 ,  H01J37/32

CPC classification number: H01J37/32633 ,  C23C8/02 ,  C23C8/10 ,  G03F7/427 ,  H01J37/32357 ,  H01J2237/3342

Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

Abstract translation: 裸铝挡板适用于抗蚀剂剥离室，并且包括外部氧化铝层，其可以是天然氧化铝层或通过化学处理新的或使用的裸铝挡板形成薄的外部氧化铝层而形成的层。

公开(公告)号：US20050279380A1

公开(公告)日：2005-12-22

申请号：US10998465

申请日：2004-11-29

Applicant: David Elliott ,  Ronald Millman ,  Murray Tardif ,  Krista Aiello

Inventor： David Elliott ,  Ronald Millman ,  Murray Tardif ,  Krista Aiello

IPC: B08B3/12 ,  B08B7/00 ,  C23F1/00 ,  G03F7/42 ,  H01L21/311

CPC classification number: B08B7/0042 ,  G03F7/427 ,  H01L21/31138 ,  H01L21/67005

Abstract: A system for removing photoresist from semiconductor wafers is disclosed. The system utilizes a solid-state laser having wavelengths in the near-visible and visible portions of the electromagnetic spectrum to remove photoresist without requiring hazardous gases or wet solutions. In addition, the system does not damage the substrate being cleaned, nor leave a carbon residue requiring further processing to remove. The system uses photon energy, oxygen, water vapor and ozone to interact with contaminants on a surface, forming a gas reaction zone (GRZ). The GRZ reacts and completely removes the photoresist or other unwanted contamination.

Abstract translation: 公开了一种用于从半导体晶片去除光致抗蚀剂的系统。 该系统利用在电磁光谱的近可见和可见部分中具有波长的固态激光去除光致抗蚀剂而不需要有害气体或湿溶液。 此外，该系统不会损坏被清洁的基板，也不会留下需要进一步处理以除去的碳残留物。 该系统使用光子能量，氧气，水蒸汽和臭氧与表面上的污染物相互作用，形成气体反应区（GRZ）。 GRZ反应并完全去除光致抗蚀剂或其他不需要的污染物。

公开(公告)号：US20050199586A1

公开(公告)日：2005-09-15

申请号：US11052911

申请日：2005-02-09

Applicant: Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

Inventor： Atsushi Matsushita ,  Isao Matsumoto ,  Kazuaki Inukai ,  Hong Shin ,  Naofumi Ohashi ,  Shuji Sone ,  Kaori Misawa

IPC: H01L21/3065 ,  B44C1/22 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32477 ,  H01J2237/3342

Abstract: In resist removal using hydrogen gas, the specific dielectric constant of an insulating film of a low dielectric constant can be reduced and the resist removal speed can be increased. A wafer is loaded on a rotary table in a chamber, and hydrogen mixed gas is introduced into a discharge tube from a gas introduction port, and a μ wave is supplied into the discharge tube via a waveguide, and the mixed gas is excited by plasma, and a hydrogen active species is generated. And, a neutral radical (hydrogen radical) of hydrogen atoms or hydrogen molecules is introduced into the chamber from a gas transport pipe and a resist mask on the surface of the wafer is removed. Here, by a substrate heating system for heating the rotary table and controlling the temperature, the temperature of the wafer is set within the range from 200° C. to 400° C. The processed gas after resist removal is ejected from the chamber through a gas ejection port by an exhaust system.

Abstract translation: 在使用氢气的抗蚀剂去除中，可以降低介电常数低的绝缘膜的比介电常数，并且可以提高抗蚀剂去除速度。 将晶片装载在室内的旋转台上，将氢气混合气体从气体导入口引入放电管，经由波导将mu波供给到放电管内，混合气体被等离子体激发 ，生成氢活性物质。 并且，从气体输送管将氢原子或氢分子的中性自由基（氢基团）引入到室中，并且去除晶片表面上的抗蚀剂掩模。 这里，通过用于加热旋转台并控制温度的基板加热系统，将晶片的温度设定在200℃至400℃的范围内。抗蚀剂除去后的处理气体通过一个 气体排出口由排气系统。

公开(公告)号：US20050166845A1

公开(公告)日：2005-08-04

申请号：US11059202

申请日：2005-02-15

Applicant: Gerald Cox

Inventor： Gerald Cox

IPC: H01L21/027 ,  G03F7/42 ,  H01L21/00 ,  H01L21/02 ,  C23C16/00

CPC classification number: H01L21/67109 ,  G03F7/427 ,  H01L21/67103

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

公开(公告)号：US20050139242A1

公开(公告)日：2005-06-30

申请号：US11027434

申请日：2004-12-30

Applicant: Sang Nam

Inventor： Sang Nam

IPC: G02B5/20 ,  B08B3/00 ,  G03F7/40 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L27/146

CPC classification number: G03F7/427 ,  H01L27/14621 ,  H01L27/14685

Abstract: A method for completely removing color photoresist is disclosed. A disclosed method comprises: performing a first plasma ashing process to remove color photoresist on a substrate having at least one predetermined structure; performing a wet etch; and performing a second plasma ashing process to remove the residues of the color photoresist.

Abstract translation: 公开了一种完全去除彩色光刻胶的方法。 所公开的方法包括：执行第一等离子体灰化处理以去除具有至少一个预定结构的基底上的彩色光致抗蚀剂; 进行湿蚀刻; 以及执行第二等离子体灰化处理以去除彩色光致抗蚀剂的残留物。

公开(公告)号：US06905800B1

公开(公告)日：2005-06-14

申请号：US09718319

申请日：2000-11-21

Applicant: Stephen Yuen ,  Mohit Jain ,  Thorsten B. Lill

Inventor： Stephen Yuen ,  Mohit Jain ,  Thorsten B. Lill

IPC: G03F7/42 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

CPC classification number: H01J37/321 ,  G03F7/427 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A substrate processing method comprises providing a substrate 105 comprising etch resistant material 210 in a process zone 155, such as an energized gas zone in a process chamber 110. The etch resistant material 210 may comprise a resist material 230 over mask material 240. The process may further comprise removing the etch resistant material 210, such as the resist material 230, in the process zone 155 before etching underlying layers.

Abstract translation: 衬底处理方法包括在处理区域155中提供包括耐蚀刻材料210的衬底105，例如处理室110中的通电气体区域。 耐蚀刻材料210可以包括掩模材料240上的抗蚀剂材料230。 该工艺可以进一步包括在蚀刻下面的层之前去除处理区155中的耐蚀刻材料210，例如抗蚀剂材料230。

公开(公告)号：US20050045590A1

公开(公告)日：2005-03-03

申请号：US10938478

申请日：2004-09-10

Applicant: Lindsey Hall ,  Scott Summerfelt

Inventor： Lindsey Hall ,  Scott Summerfelt

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23F1/00 ,  B08B6/00

CPC classification number: G03F7/427 ,  G03F7/42 ,  G03F7/423 ,  G03F7/428 ,  H01L21/02054 ,  H01L21/31122 ,  H01L21/32136 ,  H01L28/55 ,  Y10S134/902

Abstract: An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8. The method involves cleaning the material stack 2 with a fluorine-based plasma etch. The method further involves rinsing the material stack 2 with a wet clean process.

Abstract translation: 本发明的一个实施例是清洁具有硬掩模顶层8的材料堆叠2的方法。该方法包括用基于氟的等离子体蚀刻来清洁材料堆叠2。 该方法还包括用湿清洁工艺漂洗材料堆叠2。