Dual etching of ceramic materials with an elevated thin film
    61.
    发明授权
    Dual etching of ceramic materials with an elevated thin film 失效
    陶瓷材料的双重蚀刻具有升高的薄膜

    公开(公告)号:US5679267A

    公开(公告)日:1997-10-21

    申请号:US586358

    申请日:1996-01-16

    IPC分类号: H01L27/146 H01L37/02 B44C1/22

    CPC分类号: H01L37/02 H01L27/1465

    摘要: A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A shallow etch stop trench (46) is first ion milled around each ceramic island on the front side and then filled with an etch step material (e.g. parylene 48). An optical coat (e.g transparent metal layer 54, transparent organic layer 56 and conductive metallic layer 58) is elevated above the etch step material by an elevation layer (e.g. polyimide 49). For some applications, it has been experimentally verified that there is no loss, and sometimes a measured increase, in optical efficiency when the optical coating is not planar in topology. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 86) containing a massive array of sensing circuits.

    摘要翻译: 新颖的网状阵列包括使用独特的图案化方法由新型材料制成的陶瓷岛(例如BST 40)。 首先在前侧的每个陶瓷岛周围离子研磨浅蚀刻停止沟槽(46),然后填充蚀刻步骤材料(例如聚对二甲苯48)。 光学涂层(例如透明金属层54,透明有机层56和导电金属层58)通过仰角层(例如聚酰亚胺49)在蚀刻步骤材料上方升高。 对于一些应用,已经通过实验证实,当光学涂层在拓扑结构中不是平面的时,光学效率没有损失,有时是测量的增加。 新颖的制造方法还提供了将大量陶瓷岛中的每一个的便利的电和机械结合到包含大量感测电路阵列的信号处理器基板(例如Si 86)。

    Pyroelectric infrared array sensor
    63.
    发明授权
    Pyroelectric infrared array sensor 失效
    热电红外阵列传感器

    公开(公告)号:US5625188A

    公开(公告)日:1997-04-29

    申请号:US329333

    申请日:1994-10-26

    申请人: Kenji Hori

    发明人: Kenji Hori

    IPC分类号: G01J5/34 H01L37/02 G01J5/10

    CPC分类号: H01L37/02 G01J5/34

    摘要: A pyroelectric infrared array sensor has a pyroelectric element on which a plurality of sensing sections are formed each of which is made up of a pair of electrodes confronted with each other. In fixedly securing the pyroelectric element to a substrate, lead conductors extended from the sensing sections located adjacent to the edges of the light receiving surface of the pyroelectric element are fixedly connected to the substrate by using conductive paste.

    摘要翻译: 热电型红外线阵列传感器具有热电元件,在该热电元件上形成有多个感测部,每个感测部由彼此面对的一对电极组成。 在将热电元件固定地固定在基板上时,从与热电元件的光接收表面的边缘相邻的感测部分延伸的引线导体通过使用导电浆料固定地连接到基板。

    Infrared detection element array and method for fabricating the same
    65.
    发明授权
    Infrared detection element array and method for fabricating the same 失效
    红外线检测元件阵列及其制造方法

    公开(公告)号:US5583058A

    公开(公告)日:1996-12-10

    申请号:US244079

    申请日:1994-05-17

    摘要: An object of the present invention is to provide a highly integrated infrared detecting element array having infrared detecting elements which are disposed at a high density and have a low heat capacity each. An insulator film 2 is provided on a silicon substrate 1 having upper surface in a {100} plane; opening portions are defined by etching right-angled triangular portions defined at four corners of each of right-angled quadrilaterals arranged in matrix array and enclosed by two orthogonally crossing pairs of parallel linear portions extending on the insulator film a pyramid cavity; 3 is defined into the silicon substrate underlying the insulator film 2 by anisotropically etching the silicon substrate; and infrared detecting elements are formed on the insulator film 2.

    摘要翻译: PCT No.PCT / JP93 / 01328 Sec。 371日期:1994年5月17日 102(e)日期1994年5月17日PCT提交1993年9月16日PCT公布。 公开号WO94 / 07115 日本特开1994年3月31日本发明的目的是提供一种高度集成的红外线检测元件阵列,其具有红外线检测元件,其以高密度设置并且各自具有低热容量。 绝缘膜2设置在具有{100}平面中的上表面的硅衬底1上; 通过蚀刻在矩阵阵列中布置的每个直角四边形的四个角处限定的直角三角形部分限定开口部分,并且由在绝缘膜上延伸的金字塔空腔的两个平行直线部分的两个正交交叉的对包围; 3通过各向异性蚀刻硅衬底被限定在绝缘膜2下面的硅衬底中; 并且在绝缘膜2上形成红外线检测元件。

    Thermal isolation for hybrid thermal detectors

    公开(公告)号:US5572029A

    公开(公告)日:1996-11-05

    申请号:US488390

    申请日:1995-06-07

    IPC分类号: G01J5/20 H01L37/02 G01J5/10

    CPC分类号: G01J5/20 H01L37/02

    摘要: A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

    Electrical contact to the common electrode of an infrared detector array
    67.
    发明授权
    Electrical contact to the common electrode of an infrared detector array 失效
    与红外探测器阵列的公共电极电接触

    公开(公告)号:US5565682A

    公开(公告)日:1996-10-15

    申请号:US475959

    申请日:1995-06-07

    IPC分类号: G01J5/34 H01L37/02 G01J5/02

    摘要: A system for infrared sensing has thermally sensitive picture elements within a substrate; bias contact areas within the substrate and around a periphery of the thermally sensitive picture elements; a common electrode on a front side of the thermally sensitive picture elements and the bias contact areas; an optical coating on top of the common electrode; a first electrical contact metal on a backside of the thermally sensitive picture elements; and a second electrical contact metal connected to the bias contact areas on a backside of the bias contact areas and electrically connected to the common electrode. The bias contact areas may include a conductive substrate area. In addition, the device may be connected to an integrated circuit by an ohmic connection to the first and/or the second electrical contact metal.

    摘要翻译: 用于红外感测的系统在衬底内具有热敏像素; 衬底内的偏置接触区域和热敏图像元件的周围; 在热敏图像元件的正面上的公共电极和偏置接触区域; 公共电极顶部的光学涂层; 在热敏图像元件的背面上的第一电接触金属; 以及第二电接触金属,其连接到偏置接触区域的背侧上的偏置接触区域并电连接到公共电极。 偏置接触区域可以包括导电衬底区域。 此外,器件可以通过与第一和/或第二电接触金属的欧姆连接而连接到集成电路。

    Infrared detecting element
    68.
    发明授权
    Infrared detecting element 失效
    红外线检测元件

    公开(公告)号:US5523564A

    公开(公告)日:1996-06-04

    申请号:US248154

    申请日:1994-05-24

    CPC分类号: H01L37/02

    摘要: A thermal-type infrared detecting element is provided which includes an infrared detecting member, a support member supporting the infrared detecting member, a substrate holding the support member, and a low thermal conduction part intervening between the substrate and a central portion of the support member, the support member having a link portion in at least a peripheral portion thereof which links the support member to the substrate and slits and/or grooves defined at a location adjacent the link portion. This infrared detecting element exhibits excellent sensitivity and responsiveness while requiring no cooling, and a one- or two-dimensional array of the element assures clear imaging with less crosstalk.

    摘要翻译: 提供一种热型红外线检测元件,其包括红外线检测部件,支撑红外线检测部件的支撑部件,保持支撑部件的基板以及介于基板与支撑部件的中心部之间的低热传导部 所述支撑构件在至少其周边部分中具有将所述支撑构件连接到所述基板的连接部分和在所述连接部分附近的位置限定的狭缝和/或沟槽。 该红外线检测元件在不需要冷却的情况下表现出优异的灵敏度和响应性,并且该元件的一维或二维阵列确保具有更少串扰的清晰成像。

    Etching pyroelectric devices post ion milling
    69.
    发明授权
    Etching pyroelectric devices post ion milling 失效
    蚀刻热电装置后离子铣削

    公开(公告)号:US5520299A

    公开(公告)日:1996-05-28

    申请号:US389531

    申请日:1995-02-15

    CPC分类号: G01J5/34 H01L27/16 H01L37/02

    摘要: This is a system and method of etching pyroelectric devices post ion milling. The method may comprise: forming a mask 32 for thermal isolation trenches on a substrate 14; ion milling thermal isolation trenches 40 in the substrate 14; and etching undesired defects 44 caused by the ion milling by applying a dry etch, a solvent etch, or a liquid etch to the trenches. The etch may include: hydrofluoric acid, perchloric acid, a solution of a chlorine salt and water which is then exposed to ultraviolet light or any similar chemical solution giving the correct reducing properties. The mask 32 and ion milling may be applied from either the front side or the back side of the infrared detector.

    摘要翻译: 这是在离子铣削之后蚀刻热电装置的系统和方法。 该方法可以包括:在衬底14上形成用于热隔离沟槽的掩模32; 衬底14中的离子铣削热隔离沟槽40; 并且通过对沟槽进行干蚀刻,溶剂蚀刻或液体蚀刻来蚀刻由离子研磨引起的不期望的缺陷44。 蚀刻可以包括:氢氟酸,高氯酸,氯盐和水的溶液,然后将其暴露于紫外线或任何类似的化学溶液中,得到正确的还原性能。 掩模32和离子铣削可以从红外检测器的前侧或后侧施加。

    Pyroelectric infrared detector and method of fabricating the same
    70.
    发明授权
    Pyroelectric infrared detector and method of fabricating the same 失效
    热电红外探测器及其制造方法

    公开(公告)号:US5483067A

    公开(公告)日:1996-01-09

    申请号:US373103

    申请日:1995-01-17

    CPC分类号: H01L37/02

    摘要: A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin film. First and second electrodes are connected to first and second surfaces of the pyroelectric portion respectively. The pyroelectric portion may include a pyroelectric film of Pb.sub.x La.sub.y Ti.sub.z Zr.sub.w O.sub.3 where atomic fractions "w", "x", "y", and "z" satisfy one of following conditions a), b), and c):a) 0.7.ltoreq.x.ltoreq.1, x+y=1, 0.925.ltoreq.z.ltoreq.1, w=0b) x=1, y=0, 0.45.ltoreq.z

    摘要翻译: 热电型红外线检测器包括具有凹部的基板。 热电部分基本上与凹部对准。 树脂膜位于基板和热电部分之间。 凹部面向树脂膜。 第一和第二电极分别连接到热电部分的第一和第二表面。 热电部分可以包括Pb x L y Ti z Zr w O 3的热电膜,其中原子分数“w”,“x”,“y”和“z”满足以下条件之一:a),b)和c):a) x = 1,x + y = 1,0.925