Abstract:
A magnetic head cluster is provided along with a method of making a magnetic head cluster. The magnetic head cluster comprises a substrate having a plurality of magnetoresistive (MR) read and inductive magnetic write transducers and a plurality of terminals formed thereon. A plurality of lapping guides are also provided on the substrate between adjacent transducers.
Abstract:
A multi-spindle end effector is provided for a multiple axis robot. The multi-spindle end effector includes a plate housing having at least a pair of spaced-apart spindles mounted thereon. A servo-motor drivingly engages the spindles. A gear box steps down the RPMs of the motor to the desired RPM of the object to be rotated. A timing belt, which may be continuous, interlinks the first and second spindles so that the rotation of first spindle matches the rotation of the second spindle. An idler pulley may be employed to properly tension the belt.
Abstract:
Disk substrates are polished in a process which uses a single load of the disks to a polishing apparatus and a single polishing slurry. Preferably, the process varies at least one polishing parameter at multiple stages to achieve both a reasonable rate of removal during one stage and a smooth finished surface during another stage. Preferably, a fine grit cerium oxide slurry is used, along with a polishing pad having surface characteristics intermediate those of relatively hard pads typically used for material removal, and of relatively soft pads typically used for fine finishing. The polisher operates at high pressure and speed during a material removal stage, and then reduces speed and pressure during a finishing stage to achieve a suitable surface finish, without removing and cleaning disks between the two stages.
Abstract:
A device is disclosed for edge-machining an optical lens, clampable between two aligned holding shafts rotatable about the rotational axis of a workpiece, having a Z slide, which is guided longitudinally displaceably on a base frame in a Z direction parallel to the rotational axis of the workpiece, and an X slide bearing a tool post with an edge-machining tool, which is guided longitudinally displaceably on the Z slide in an X direction perpendicular to the Z direction in such a way that the edge-machining tool may be brought into machining engagement with the optical lens. For industrial use, the base frame is of substantially O-shaped construction and surrounds the Z slide, wherein the Z slide is likewise of substantially O-shaped construction and surrounds the X slide. In addition or as an alternative thereto, provision is made for an additional machining means to be fixed to the X slide, which means comprises at least one further edge-machining tool, which may be moved from a parked position into a machining position between the lens and the edge-machining tool on the tool post.
Abstract:
A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.
Abstract:
A pad for processing substrates such as a pad for CMP and methods of using the pad: the pad is capable of allowing the substrate to be optically monitored during the process. In one embodiment, at least a portion of the pad includes an optical filter for attenuating optical noise so that optical signals used for monitoring the substrate provide a more accurate representation of the process status. The optical filter is capable of transmitting the optical signal while reducing the amount of optical noise. In another embodiment, the surface of the filter is recessed from the polishing surface of the pad so that the filter surface is subjected to less abrasion during polishing processes and during pad conditioning.
Abstract:
A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body to control the pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.
Abstract:
Planarizing machines and methods for endpointing or otherwise controlling mechanical and/or chemical-mechanical planarization of microelectronic-device substrates. In one embodiment of the invention, a method for planarizing a microelectronic substrate assembly includes removing material from the substrate assembly during a planarizing cycle by contacting the substrate assembly with a planarizing medium and moving the substrate assembly and/or the planarizing medium relative to each other. The method can also include controlling the planarizing cycle by predicting a thickness of an outer film over a first region on the substrate assembly and providing an estimate of an erosion rate ratio between the first region and a second region. The endpointing procedure continues by determining an estimated value of an output factor, such as a reflectance intensity from the substrate assembly, by modeling the output factor based upon the thickness of the outer film over the first region and the erosion rate ratio between the first region and the second region. The endpointing procedure continues by ascertaining an updated predicted thickness of the outer film over the first region by measuring an actual value of the output factor during the planarizing cycle without interrupting removal of material from the substrate, and then updating the predicted thickness of the outer film according to the actual value of the output factor and the estimated value of the output factor. The updated predicted thickness can be determined using an Extended Kalman Filter. The planarizing process is controlled according to the updated predicted thickness of the outer film.
Abstract:
Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.
Abstract:
A carrier head for a chemical mechanical polishing system includes a flexible membrane with a substrate receiving surface, a sensor mechanism to determine if a substrate is properly attached to the carrier head, and means for preventing fluid that may be located between the substrate and the flexible membrane from interfering with the substrate detection mechanism.