公开(公告)号：US20220300449A1

公开(公告)日：2022-09-22

申请号：US17715399

申请日：2022-04-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware

IPC: G06F13/42

Abstract: An integrated circuit device is disclosed including core circuitry and interface circuitry. The core circuitry outputs in parallel a set of data bits, while the interface circuitry couples to the core circuitry. The interface circuitry receives in parallel a first number of data bits among the set of data bits from the core circuitry and outputs in parallel a second number of data bits. The ratio of the first number to the second number is a non-power-of-2 value.

公开(公告)号：US20220261361A1

公开(公告)日：2022-08-18

申请号：US17568645

申请日：2022-01-04

Applicant: Rambus Inc.

Inventor： Liji Gopalakrishnan ,  Frederick A. Ware ,  Brent S. Haukness

IPC: G06F13/16 ,  G06F3/06

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory device is disclosed. The memory device includes an array of storage cells and command interface circuitry to receive an internal transfer command. In response to the internal transfer command, transfer logic reads data from a first portion of the array of storage cells, transfers the data as on-chip transfer data, and writes the on-chip transfer data to a second portion of the array of storage cells. In response to the command interface circuitry receiving an interrupt command, the transfer logic pauses the internal transfer operation, and carries out an unrelated memory access operation involving at least the first portion of the array of storage cells or the second portion of the array of storage cells.

公开(公告)号：US20220254407A1

公开(公告)日：2022-08-11

申请号：US17568656

申请日：2022-01-04

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C11/406 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C29/02 ,  G06F1/3234 ,  G11C11/4074

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US20220171721A1

公开(公告)日：2022-06-02

申请号：US17548510

申请日：2021-12-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright ,  John Eric Linstadt ,  Craig Hampel

IPC: G06F13/16 ,  G06F12/0868 ,  G06F12/0888 ,  G11C7/10 ,  G06F3/06 ,  G06F11/10 ,  G06F12/0895 ,  G06F13/28 ,  G11C29/52

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

公开(公告)号：US20220171674A1

公开(公告)日：2022-06-02

申请号：US17548509

申请日：2021-12-11

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent Steven Haukness

IPC: G06F11/10 ,  G11C29/52 ,  G06F12/02

Abstract: A memory device is disclosed that includes a row of storage locations that form plural columns. The plural columns include data columns to store data and a tag column to store tag information associated with error locations in the data columns. Each data column is associated with an error correction location including an error code bit location. Logic retrieves and stores the tag information associated with the row in response to activation of the row. A bit error in an accessed data column is repaired by a spare bit location based on the tag information.

公开(公告)号：US11341070B2

公开(公告)日：2022-05-24

申请号：US17100560

申请日：2020-11-20

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Kenneth L. Wright

IPC: G06F13/28 ,  G06F13/16 ,  G11C5/04 ,  G11C7/10 ,  G11C7/22 ,  G11C29/02 ,  G11C5/02

Abstract: The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

公开(公告)号：US20220139445A1

公开(公告)日：2022-05-05

申请号：US17508861

申请日：2021-10-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware

IPC: G11C11/4093 ,  H01L25/065 ,  G11C17/16 ,  G11C11/4096 ,  G11C17/18 ,  G11C5/04 ,  H01L25/18 ,  H01L23/00

Abstract: A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

公开(公告)号：US11308009B2

公开(公告)日：2022-04-19

申请号：US16548714

申请日：2019-08-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright

IPC: G06F11/00 ,  G06F13/16 ,  G06F11/07 ,  G06F13/40 ,  G06F11/20 ,  G06F11/16 ,  G06F11/10

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.

公开(公告)号：US20220084571A1

公开(公告)日：2022-03-17

申请号：US17305654

申请日：2021-07-12

Applicant: Rambus Inc.

Inventor： Bret Stott ,  Frederick A. Ware ,  Ian P. Shaeffer ,  Yuanlong Wang

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/02

Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.

公开(公告)号：US11249845B2

公开(公告)日：2022-02-15

申请号：US16768722

申请日：2018-11-30

Applicant: Rambus Inc.

Inventor： Frederick A. Ware

IPC: G11C29/00 ,  G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F12/02 ,  G06F12/0882

Abstract: A hybrid volatile/non-volatile memory employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). The memory supports error-detection and correction (EDC) techniques by allocating a fraction of DRAM storage to information calculated for each unit of stored data that can be used to detect and correct errors. An interface between the DRAM cache and NVM executes a wear-leveling scheme that aggregates and distributes NVM data and EDC write operations in a manner that prolongs service life.