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    Soybean cultivar 06301722
    72.
    发明授权
    Soybean cultivar 06301722 有权
    大豆品种06301722

    公开(公告)号：US08334439B1

    公开(公告)日：2012-12-18

    申请号：US13195323

    申请日：2011-08-01

    申请人： William H. Eby

    发明人： William H. Eby

    IPC分类号： A01H5/00 ,  A01H5/10 ,  A01H1/02 ,  A01H4/00 ,  C12N15/01

    CPC分类号： A01H5/10

    摘要： A soybean cultivar designated 06301722 is disclosed. The invention relates to the seeds of soybean cultivar 06301722, to the plants of soybean cultivar 06301722, to the plant parts of soybean cultivar 06301722, and to methods for producing progeny of soybean cultivar 06301722. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. The invention also relates to soybean cultivars or breeding cultivars, and plant parts derived from soybean cultivar 06301722. The invention also relates to methods for producing other soybean cultivars, lines, or plant parts derived from soybean cultivar 06301722, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing cultivar 06301722 with another soybean cultivar.

    摘要翻译： 公开了一种名为06301722的大豆品种。 本发明涉及大豆品种06301722的种子，大豆品种06301722的植物，大豆品种06301722的植物部分，以及大豆品种06301722的后代的生产方法。本发明还涉及大豆植物的生产方法 在其遗传物质中含有一种或多种转基因，以及通过这些方法产生的转基因大豆植物和植物部分。 本发明还涉及大豆品种或繁殖品种，以及源自大豆品种06301722的植物成分。本发明还涉及从大豆品种06301722得到的其他大豆品种，品系或植物成分的制造方法，以及大豆植物品种 ，其部分来源于使用这些方法。 本发明还涉及杂交大豆种子，植物和通过品种06301722与另一个大豆品种杂交产生的植物部分。

    Soybean cultivar 8647195
    73.
    发明授权
    Soybean cultivar 8647195 有权
    大豆品种8647195

    公开(公告)号：US08334432B2

    公开(公告)日：2012-12-18

    申请号：US12546030

    申请日：2009-08-24

    申请人： Dennis L. Schultze

    发明人： Dennis L. Schultze

    IPC分类号： A01H1/00 ,  A01H4/00 ,  A01H5/00 ,  A01H5/10 ,  C12N15/82

    CPC分类号： A01H5/10

    摘要： A soybean cultivar designated 8647195 is disclosed. The invention relates to the seeds of soybean cultivar 8647195, to the plants of soybean 8647195, to plant parts of soybean cultivar 8647195, and to methods for producing a soybean plant produced by crossing soybean cultivar 8647195 with itself or with another soybean variety. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. This invention also relates to soybean cultivars, or breeding cultivars, and plant parts derived from soybean variety 8647195, to methods for producing other soybean cultivars, lines or plant parts derived from soybean cultivar 8647195, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing the cultivar 8647195 with another soybean cultivar.

    摘要翻译： 公开了一种名为8647195的大豆品种。 本发明涉及大豆品种8647195的种子，大豆8647195的植物，大豆品种8647195的植物部分，以及通过将大豆品种8647195与其他大豆品种杂交而生产的大豆植物的制造方法。 本发明还涉及含有一种或多种转基因的遗传物质的大豆植物的制备方法以及通过这些方法制备的转基因大豆植物和植物部分的方法。 本发明还涉及来自大豆品种8647195的大豆品种或繁殖品种以及来源于大豆品种8647195的植物部分，其生产大豆品种，来自大豆品种8647195的其他大豆品种，系或植物部分的方法，以及大豆植物，品种及其部分 衍生自使用这些方法。 本发明还涉及通过将栽培品种8647195与另一个大豆品种杂交而制备的杂交大豆种子，植物和植物部分。

    Use of specific silicas for increasing the rigidity of a thermoplastic while maintaining or improving its impact resistance
    74.
    发明授权
    Use of specific silicas for increasing the rigidity of a thermoplastic while maintaining or improving its impact resistance 失效
    使用特定的二氧化硅来增加热塑性塑料的刚度，同时保持或提高其耐冲击性

    公开(公告)号：US08334334B2

    公开(公告)日：2012-12-18

    申请号：US11794295

    申请日：2005-12-27

    申请人： Yves Bomal ,  Antoine Guiu

    发明人： Yves Bomal ,  Antoine Guiu

    IPC分类号： C08K3/34 ,  C08K3/36 ,  B60C1/00

    CPC分类号： C08K3/36 ,  C08L23/12 ,  Y10T428/2982

    摘要： The invention relates to the use of a silica having a BET specific surface of at least 60 m2/g for increasing the rigidity of a thermoplastic polymeric material while maintaining i.e. improving its impact resistance. The silica used is of the type obtained according to a method involving the drying of a silica suspension obtained by reacting a silicate with an acidulant according to the following successive steps: (i) forming an aqueous starter having a pH between 2 and 5; (ii) simultaneously adding silicate and the acidulant while keeping the pH between 2 and 5; (iii) continuing with only the addition of silicate until a pH between 7 and 10 has been reached; (iv) simultaneously adding silicate and acidulant while keeping the pH of the reaction medium between 7 and 10, and; (v) continuing with only the addition of the acidulant until a pH value lower than 6 has been obtained. The invention also relates to the materials obtained within this scope.

    摘要翻译： 本发明涉及具有至少60m 2 / g的BET比表面积的二氧化硅用于提高热塑性聚合物材料的刚性同时保持即提高其耐冲击性的用途。 所使用的二氧化硅是根据以下连续步骤使硅酸盐与酸化剂反应获得的二氧化硅悬浮液干燥的方法获得的：（i）形成pH为2至5的水性起始物; （ii）同时加入硅酸盐和酸化剂同时保持pH在2和5之间; （iii）仅继续添加硅酸盐，直到达到7至10之间的pH; （iv）同时加入硅酸盐和酸化剂，同时保持反应介质的pH在7和10之间; （v）仅继续添加酸化剂直至获得低于6的pH值。 本发明还涉及在该范围内获得的材料。

    Anode active material and secondary battery
    75.
    发明授权
    Anode active material and secondary battery 有权
    阳极活性材料和二次电池

    公开(公告)号：US08334069B2

    公开(公告)日：2012-12-18

    申请号：US12489020

    申请日：2009-06-22

    申请人： Satoshi Mizutani ,  Hiroshi Inoue

    发明人： Satoshi Mizutani ,  Hiroshi Inoue

    IPC分类号： H01M6/04

    CPC分类号： H01M4/134 ,  H01M4/133 ,  H01M4/364 ,  H01M4/386 ,  H01M10/0525 ,  H01M10/0569

    摘要： A secondary battery includes a cathode, an anode, and an electrolyte. The anode includes an anode active material containing silicon, boron, carbon, and one or more of metal elements selected from the group consisting of cobalt, titanium and iron. In the anode active material, a boron content is from 4.9 mass % to 19.8 mass % both inclusive, a carbon content is from 4.9 mass % to 19.8 mass % both inclusive, a total of the boron content and the carbon content is from 9.8 mass % to 29.8 mass % both inclusive, a ratio of a silicon content to the total of the silicon content and a content of the metal element is from 70 mass % to 95 mass % both inclusive. A reaction phase whose half-width of a diffraction peak obtained by X-ray diffraction is 1 degree or more is included and the anode active material is capable of reacting with an electrode reactant.

    摘要翻译： 二次电池包括阴极，阳极和电解质。 阳极包括含有硅，硼，碳以及一种或多种选自钴，钛和铁的金属元素的负极活性材料。 在负极活性物质中，硼含量为4.9质量％〜19.8质量％，碳含量为4.9质量％〜19.8质量％以下，硼含量与碳含量的合计为9.8质量％ ％〜29.8质量％，硅含量与硅含量的总和比例和金属元素的含量为70质量％〜95质量％。 包含通过X射线衍射获得的衍射峰的半宽度为1度以上的反应相，负极活性物质能够与电极反应物反应。

    Liquid crystal display element, and liquid crystal display device
    78.
    发明授权
    Liquid crystal display element, and liquid crystal display device 有权
    液晶显示元件和液晶显示装置

    公开(公告)号：US08330907B2

    公开(公告)日：2012-12-11

    申请号：US10990859

    申请日：2004-11-17

    申请人： Shunichi Hashimoto

    发明人： Shunichi Hashimoto

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/1393 ,  G02F1/133345 ,  G02F1/133502 ,  G02F1/133553 ,  G02F1/133734

    摘要： There is provided a liquid crystal display element (1) including a transparent substrate (2) having formed on a surface of a glass substrate (2a) thereof a transparent electrode (6) and an alignment layer (18) covering the transparent electrode (6), a drive circuit board (3) disposed opposite to the transparent substrate (2) and having formed on a surface of a silicon substrate (3a) thereon opposite to the transparent electrode (6) a plurality of switching drive circuits (9) and a plurality of reflection pixel electrodes (15), corresponding to pixels (12a), respectively, a protective layer (16) covering the plurality of reflection pixel electrodes (15) and an alignment layer (19) covering the protective layer (16) and a liquid crystal layer (4) interposed between the alignment layer (18) on the transparent substrate (2) and the alignment layer (19) on the drive circuit board (3), the protective layer (16) being a stack of at least two dielectric layers (16a, 16b) different in refractive index from each other, and the thickness of each of the stacked dielectric layers (16a, 16b) being set to compensate the wavelength dependence of the reflectance of the reflection pixel electrodes (15). Thus, the reflection type liquid crystal display element (1) has an improved performance of spectral reflection.

    摘要翻译： 提供了一种液晶显示元件（1），其包括在其玻璃基板（2a）的表面上形成有透明电极（6）和覆盖透明电极（6）的取向层（18）的透明基板（2） ），与所述透明基板（2）相对配置并且在与所述透明电极（6）相对的硅基板（3a）的表面上形成有多个开关驱动电路（9）的驱动电路板（3）和 分别对应于像素（12a）的多个反射像素电极（15），覆盖多个反射像素电极（15）的保护层（16）和覆盖保护层（16）的取向层（19）和 插入在透明基板（2）上的取向层（18）与驱动电路基板（3）之间的配向层（19）之间的液晶层（4），保护层（16）至少为堆叠 两个电介质层（16a，16b）的折射率不同 e的折射率，并且叠层电介质层（16a，16b）的厚度被设定为补偿反射像素电极（15）的反射率的波长依赖性。 因此，反射型液晶显示元件（1）具有改进的光谱反射性能。

    Plants and seeds of hybrid corn variety CH700245
    80.
    发明授权
    Plants and seeds of hybrid corn variety CH700245 有权
    杂交玉米品种CH700245的植物和种子

    公开(公告)号：US08330014B2

    公开(公告)日：2012-12-11

    申请号：US12776311

    申请日：2010-05-07

    申请人： Richard G. Stelpflug ,  Allen C. Faue ,  Fufa H. Birru

    发明人： Richard G. Stelpflug ,  Allen C. Faue ,  Fufa H. Birru

    IPC分类号： A01H1/00 ,  A01H1/02 ,  A01H5/00 ,  A01H5/10 ,  C12N5/04

    CPC分类号： A01H5/10 ,  A01H1/00 ,  A23L7/10 ,  C11B1/00

    摘要： According to the invention, there is provided seed and plants of the hybrid corn variety designated CH700245. The invention thus relates to the plants, seeds and tissue cultures of the variety CH700245, and to methods for producing a corn plant produced by crossing a corn plant of variety CH700245 with itself or with another corn plant, such as a plant of another variety. The invention further relates to genetic complements of plants of variety CH700245.

    摘要翻译： 根据本发明，提供了称为CH700245的杂种玉米品种的种子和植物。 因此，本发明涉及品种CH700245的植物，种子和组织培养物，以及通过将品种CH700245的玉米植物与其他玉米植物（例如另一种植物）杂交而产生的玉米植物的生产方法。 本发明还涉及品种CH700245的植物的遗传互补。