公开(公告)号：US20110084367A1

公开(公告)日：2011-04-14

申请号：US12897907

申请日：2010-10-05

申请人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

发明人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

IPC分类号： H01L23/00 ,  H01L21/762

CPC分类号： H01L21/76243

摘要： A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the silicon wafer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment.

摘要翻译： 一种制造外延晶片的方法，包括：从硅晶片的表面注入氧离子，从而在所述硅晶片的表面层中形成离子注入层; 在形成离子注入层之后，将硼离子从硅晶片的表面注入离子注入层中的整个区域; 在硼离子注入后对硅晶片进行热处理，从而形成包含硅颗粒，氧化硅和硼的混合物的减薄 - 阻挡层，并在薄晶片表面侧的硅晶片中形成有源层 层; 以及在热处理之后在硅晶片的表面上形成外延层。

公开(公告)号：US20110027969A1

公开(公告)日：2011-02-03

申请号：US12903139

申请日：2010-10-12

申请人： Satoshi MURAKAMI ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi MURAKAMI ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。

公开(公告)号：US07625808B2

公开(公告)日：2009-12-01

申请号：US10569942

申请日：2004-09-01

申请人： Akihiko Endo ,  Hideki Nishihata

发明人： Akihiko Endo ,  Hideki Nishihata

IPC分类号： H01L21/30 ,  H01L21/44

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon oxide film is large at a time of ion implantation. Furthermore, since the silicon oxide film is rather thinner and thereby the ion implantation depth is relatively deeper, damages to the active layer and the buried silicon oxide film caused by the ion implantation can be reduced.

摘要翻译： 用于有源层的晶片的氧化硅膜的厚度被控制为比掩埋氧化硅膜薄。 因此，即使离子注入时氧化硅膜的面内厚度的变化大，接合晶片的有源层的膜厚均匀性也提高。 此外，由于氧化硅膜相当薄，因此离子注入深度相对较深，可以减少由离子注入引起的对有源层和掩埋氧化硅膜的损伤。

公开(公告)号：US20090186464A1

公开(公告)日：2009-07-23

申请号：US12321725

申请日：2009-01-22

申请人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/304 ,  H01L21/30608 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/76243 ,  H01L21/76254 ,  H01L2221/68363

摘要： In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions.

摘要翻译： 在通过将活性层用晶片与支撑层用晶片接合而制造接合晶片的方法中，将活性层用晶片进行稀释时，将氧离子注入有源层用晶片时，将注入工序分为两个阶段 在规定条件下进行。

公开(公告)号：US20080248630A1

公开(公告)日：2008-10-09

申请号：US12057896

申请日：2008-03-28

申请人： Akihiko ENDO ,  Nobuyuki MORIMOTO

发明人： Akihiko ENDO ,  Nobuyuki MORIMOTO

IPC分类号： H01L21/30

CPC分类号： H01L21/76243 ,  H01L21/76251

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括通过在有源层晶片中注入氧离子来形成基板电阻率为1至100mOmegacm的有源层晶片中的氧离子注入层，直接或通过绝缘层与基底晶片和有源层晶片接合以形成 接合晶片，对接合的晶片进行热处理，以加强结合，并将氧离子注入层转换成活性层晶片表面侧的停止层，研磨，抛光和/或蚀刻，粘结晶片 被加强以使接合晶片的表面上的停止层露出，去除停止层，并且在还原气氛下对已经去除了停止层的接合晶片进行热处理，以使包含在接合晶片中的导电组分扩散 有源层晶片。

公开(公告)号：US20080213974A1

公开(公告)日：2008-09-04

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

发明人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

IPC分类号： H01L21/30

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US07416960B2

公开(公告)日：2008-08-26

申请号：US11855754

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。

公开(公告)号：US20080014717A1

公开(公告)日：2008-01-17

申请号：US11855754

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

公开(公告)号：US20070298589A1

公开(公告)日：2007-12-27

申请号：US11811070

申请日：2007-06-07

申请人： Hideki Nishihata ,  Nobuyuki Morimoto ,  Akihiko Endo

发明人： Hideki Nishihata ,  Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/76254

摘要： There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.

摘要翻译： 提供了一种通过将用于有源层和支撑层的两个硅晶片彼此粘合然后使用于活性层的晶片的表面注入氮离子的有源层的晶片变薄来形成接合晶片的方法，以形成 在接合之前用于有源层的晶片内部的氮化物层。

公开(公告)号：US20070264797A1

公开(公告)日：2007-11-15

申请号：US11801461

申请日：2007-05-09

申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。