公开(公告)号：US07700393B2

公开(公告)日：2010-04-20

申请号：US12043982

申请日：2008-03-07

申请人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

发明人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/7834 ,  B82Y10/00 ,  G11B9/1409 ,  H01L21/28123 ,  H01L29/66636

摘要： A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

摘要翻译： 提供一种制造增强型半导体探针的方法和具有该增强型半导体探针的信息存储装置。 该方法包括使用各向异性湿蚀刻和侧壁，其中降低了工艺参数对器件性能的影响，以提高器件在批量生产中的可靠性，并且去除降低测量灵敏度的因素以提高性能 的设备。

公开(公告)号：US07687838B2

公开(公告)日：2010-03-30

申请号：US11240570

申请日：2005-10-03

申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

IPC分类号： H01L21/66 ,  H01L21/00 ,  G11B9/00 ,  G11B3/00 ,  G11B11/00

CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

公开(公告)号：US20090285082A1

公开(公告)日：2009-11-19

申请号：US12251072

申请日：2008-10-14

申请人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

发明人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

IPC分类号： G11B9/00 ,  H01L21/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

摘要翻译： 电场头包括主体部分和读取头，其具有设置在主体部分面向记录介质的空气轴承表面（ABS）上的通道层，以及与沟道层两端接触的源极和漏极。 通过限定基板的头部形成部分来制造电场磁头，将磁头形成部分与基板分离，在分离的磁头形成部分的侧表面上形成ABS图案，并且形成用于读取磁头的通道层 形成ABS图案的头部形成部分的表面。 信息存储装置包括铁电记录介质和电场磁头。

公开(公告)号：US20090090936A1

公开(公告)日：2009-04-09

申请号：US12120816

申请日：2008-05-15

申请人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01S5/00 ,  G11B9/00

CPC分类号： G11B9/02 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7787

摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

摘要翻译： 提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。 电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。 此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

公开(公告)号：US20080220556A1

公开(公告)日：2008-09-11

申请号：US12043982

申请日：2008-03-07

申请人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

发明人： Hyoung Soo Ko ,  Byung Gook Park ,  Seung Bum Hong ,  Chul Min Park ,  Woo Young Choi ,  Jong Pil Kim ,  Jae Young Song ,  Sang Wan Kim

IPC分类号： H01L21/02

CPC分类号： H01L29/7834 ,  B82Y10/00 ,  G11B9/1409 ,  H01L21/28123 ,  H01L29/66636

摘要： A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

摘要翻译： 提供一种制造增强型半导体探针的方法和具有该增强型半导体探针的信息存储装置。 该方法包括使用各向异性湿蚀刻和侧壁，其中降低了工艺参数对器件性能的影响，以提高器件在批量生产中的可靠性，并且去除降低测量灵敏度的因素以提高性能 的设备。

公开(公告)号：US20070292773A1

公开(公告)日：2007-12-20

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung KIM ,  Hyoung-soo KO ,  Seung-bum HONG ,  Jin-seung SOHN ,  Sung-hoon CHOA ,  Chee-kheng LIM

发明人： Hae-sung KIM ,  Hyoung-soo KO ,  Seung-bum HONG ,  Jin-seung SOHN ,  Sung-hoon CHOA ,  Chee-kheng LIM

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US20070211542A1

公开(公告)日：2007-09-13

申请号：US11604263

申请日：2006-11-27

申请人： Hyoung-soo Ko ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

IPC分类号： G11C7/10

CPC分类号： G11C29/50 ,  G11C7/10 ,  G11C11/22 ,  G11C2029/5602

摘要： A multi-probe for writing data to and/or reading data from a recording medium. The multi-probe includes a plurality of probes. All of the probes are working probes for writing the data to and/or reading the data from the recording medium.

摘要翻译： 用于将数据写入和/或从记录介质读取数据的多探头。 多探针包括多个探针。 所有探头都是用于将数据写入和/或从记录介质读取数据的工作探头。

公开(公告)号：US20060175644A1

公开(公告)日：2006-08-10

申请号：US11348485

申请日：2006-02-07

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： H01L29/94

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。