公开(公告)号：US20070292773A1

公开(公告)日：2007-12-20

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung KIM ,  Hyoung-soo KO ,  Seung-bum HONG ,  Jin-seung SOHN ,  Sung-hoon CHOA ,  Chee-kheng LIM

发明人： Hae-sung KIM ,  Hyoung-soo KO ,  Seung-bum HONG ,  Jin-seung SOHN ,  Sung-hoon CHOA ,  Chee-kheng LIM

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US20120294137A1

公开(公告)日：2012-11-22

申请号：US13557584

申请日：2012-07-25

申请人： Seung-bum HONG ,  Sung-hoon CHOA ,  Ju-hwan JUNG ,  Hyoung-soo KO ,  Yong Kwan KIM

发明人： Seung-bum HONG ,  Sung-hoon CHOA ,  Ju-hwan JUNG ,  Hyoung-soo KO ,  Yong Kwan KIM

IPC分类号： G11B9/00

CPC分类号： G11B9/02

摘要： An apparatus can include a read head formed in a semiconductor layer of an air bearing surface, the read head comprising a channel region formed between a source and drain which are doped to a higher conductivity than the channel region; wherein the channel region is configured to generate a charge carrier depletion region in response to a first ferroelectric dipole direction, and to accumulate charge carriers in response to a second ferroelectric dipole direction.

摘要翻译： 一种装置可以包括形成在空气轴承表面的半导体层中的读取头，读取头包括形成在源极和漏极之间的沟道区，掺杂到比沟道区更高的导电性; 其中所述沟道区被配置为响应于第一铁电偶极方向产生电荷载流子耗尽区，并且响应于第二铁电偶极方向累积电荷载流子。

公开(公告)号：US20090141396A1

公开(公告)日：2009-06-04

申请号：US12126427

申请日：2008-05-23

申请人： Hyoung-soo KO ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/37

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.

摘要翻译： 一种用于使用电场效应从铁电记录介质上记录/再现信息的电场效应读/写头包括半导体衬底，形成在半导体衬底的面对铁电记录介质的上表面的凹部，以及 记录/再现部分。

公开(公告)号：US20080225678A1

公开(公告)日：2008-09-18

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US20080116926A1

公开(公告)日：2008-05-22

申请号：US11861417

申请日：2007-09-26

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G01R31/02 ,  H01C17/00

CPC分类号： G01Q60/30 ,  G01Q80/00 ,  H01C13/00 ,  Y10T29/49082

摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

摘要翻译： 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，并且其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

公开(公告)号：US20090034405A1

公开(公告)日：2009-02-05

申请号：US11965836

申请日：2007-12-28

申请人： Dae-young JEON ,  Dong-ki MIN ,  Hyoung-soo KO ,  Seung-bum HONG

发明人： Dae-young JEON ,  Dong-ki MIN ,  Hyoung-soo KO ,  Seung-bum HONG

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

摘要翻译： 存储装置包括铁电记录介质，电场传感器，其包括源极区域，漏极区域和将源极区域电连接到漏极区域并具有电阻的电阻区域，该电阻器根据电场的强度而变化 至所述记录介质的电畴的极化电压，在所述源极区域和所述漏极区域之间施加漏极电压的电压施加单元，以及再现信号检测单元，所述再现信号检测单元包括安装在连接所述漏极 区域，并且检测漏极区域和至少一个负电阻器之间的电压变化。

公开(公告)号：US20090034120A1

公开(公告)日：2009-02-05

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

公开(公告)号：US20080078239A1

公开(公告)日：2008-04-03

申请号：US11750404

申请日：2007-05-18

申请人： Hyoung-soo KO ,  Ju-hwan JUNG ,  Seung-bum HONG ,  Hong-sik PARK ,  Chul-min PARK

发明人： Hyoung-soo KO ,  Ju-hwan JUNG ,  Seung-bum HONG ,  Hong-sik PARK ,  Chul-min PARK

IPC分类号： G01B5/28 ,  H01L21/00

CPC分类号： G01Q60/30 ,  G01Q60/40

摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape

摘要翻译： 提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域 的第二杂质在电阻尖端的两个侧面上。 探针还包括在其边缘部分上具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形

公开(公告)号：US20130148097A1

公开(公告)日：2013-06-13

申请号：US13604335

申请日：2012-09-05

申请人： Jae-sung SHIN ,  Hyoung-soo KO ,  Shin-wook Yi

发明人： Jae-sung SHIN ,  Hyoung-soo KO ,  Shin-wook Yi

IPC分类号： G01C3/08

CPC分类号： G01S17/10 ,  G01S7/4861

摘要： A distance measuring sensor includes a substrate doped with a first impurity, first and second charge storage regions spaced apart from each other in the substrate and doped with a second impurity, a photoelectric conversion region doped with the second impurity between the first and the second charge storage regions and configured to receive light to generate charges, a first dielectric layer covering the first and second charge storage regions and the photoelectric conversion region, a second dielectric layer on the first dielectric layer, and first and second transfer gates spaced apart from each other on the first dielectric layer and between the first and second charge storage regions. Each of the first and second transfer gates may cover a portion of the second dielectric layer and may be configured to selectively transfer the charges generated in the photoelectric conversion region to the first and second charge storage regions.

摘要翻译： 距离测量传感器包括掺杂有第一杂质的衬底，在衬底中彼此间隔开并掺杂有第二杂质的第一和第二电荷存储区域，在第一和第二电荷之间掺杂有第二杂质的光电转换区域 存储区域并被配置为接收光以产生电荷，覆盖第一和第二电荷存储区域和光电转换区域的第一介电层，第一电介质层上的第二电介质层，以及彼此间隔开的第一和第二传输门 在第一电介质层上以及第一和第二电荷存储区之间。 第一和第二传输栅极中的每一个可以覆盖第二介电层的一部分，并且可以被配置为选择性地将在光电转换区域中产生的电荷转移到第一和第二电荷存储区域。

公开(公告)号：US20090285082A1

公开(公告)日：2009-11-19

申请号：US12251072

申请日：2008-10-14

申请人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

发明人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

IPC分类号： G11B9/00 ,  H01L21/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

摘要翻译： 电场头包括主体部分和读取头，其具有设置在主体部分面向记录介质的空气轴承表面（ABS）上的通道层，以及与沟道层两端接触的源极和漏极。 通过限定基板的头部形成部分来制造电场磁头，将磁头形成部分与基板分离，在分离的磁头形成部分的侧表面上形成ABS图案，并且形成用于读取磁头的通道层 形成ABS图案的头部形成部分的表面。 信息存储装置包括铁电记录介质和电场磁头。