公开(公告)号：US5889595A

公开(公告)日：1999-03-30

申请号：US662326

申请日：1996-06-12

申请人： Jae-Ho Kim ,  Gang-Bock Lee

发明人： Jae-Ho Kim ,  Gang-Bock Lee

IPC分类号： B41J2/36 ,  G03G15/22 ,  H04N1/29 ,  H04N1/00 ,  B41J29/38 ,  G06F15/00 ,  H04N1/32

CPC分类号： H04N1/32379 ,  B41J2/36 ,  G03G15/221 ,  H04N1/295 ,  H04N2201/3212

摘要： A method of stopping a printing operation in a facsimile system includes detecting a ring signal, receiving image data to be printed in the printing operation after detecting the ring signal, and stopping the printing operation and displaying an error message when the image data is determined to contain a predetermined number of consecutive black data lines. The predetermined number of consecutive black data lines represent a length on a recording sheet that is greater than or equal to a selected millimeters.

摘要翻译： 一种在传真机系统中停止打印操作的方法包括检测振铃信号，在检测到振铃信号之后接收打印操作中要打印的图像数据，并且当确定图像数据时停止打印操作并显示错误消息 包含预定数量的连续的黑色数据线。 预定数量的连续黑色数据线表示记录纸上的长度大于或等于所选择的毫米。

公开(公告)号：US5786265A

公开(公告)日：1998-07-28

申请号：US647874

申请日：1996-05-09

申请人： Min-wk Hwang ,  Hung-mo Yang ,  Jae-ho Kim ,  Won-taek Choi ,  Won-cheol Hong

发明人： Min-wk Hwang ,  Hung-mo Yang ,  Jae-ho Kim ,  Won-taek Choi ,  Won-cheol Hong

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L27/08

CPC分类号： H01L21/76216

摘要： Methods of forming semiconductor devices containing field oxide and channel-stop isolation regions therein include the steps of forming a plurality of first channel-stop isolation regions by implanting first conductivity type impurities at a first dose level into a face of a semiconductor substrate and then forming respective field oxide isolation regions at the locations where the first channel-stop isolation regions have been implanted. A conductive layer, which contacts active regions of the substrate and covers the field oxide isolation regions, is then patterned over the field oxide isolation regions to expose central portions of the upper surfaces of the field oxide isolation regions. The patterned conductive layer constitutes a landing pad layer which is preferably used as a mask during the formation of second channel-stop isolation regions in the substrate, by implanting first conductivity type impurities through the exposed upper surfaces of the field oxide isolation regions, into the centers of the first channel-stop isolation regions. During this step, the impurities are implanted at a higher dose and energy level so that the first and second channel-stop regions collectively form T-shaped channel-stop regions underneath respective field oxide isolation regions, when viewed in transverse cross-section. By reducing the concentration of the channel-stop impurities near the edges of the field oxide isolation regions and active regions, leakage currents can be reduced and refresh characteristics of memory devices can be improved by reducing the strength of parasitic electric fields in the substrate. However, by maintaining relatively high concentrations of the channel-stop impurities under the center of the field oxide isolation regions, electrical isolation of adjacent devices can be maintained at high levels.

摘要翻译： 在其中形成包含场氧化物和通道停止隔离区的半导体器件的方法包括以下步骤：通过将第一剂量水平的第一导电类型杂质注入到半导体衬底的表面中然后形成多个第一通道 - 停止隔离区域 在已经植入第一通道 - 停止隔离区的位置处的各个场氧化物隔离区。 然后，在场氧化物隔离区域上形成接触衬底的活性区域并覆盖场氧化物隔离区域的导电层，以暴露场氧化物隔离区域的上表面的中心部分。 图案化的导电层构成着陆焊盘层，其在衬底中形成第二通道停止隔离区域期间优选用作掩模，通过将第一导电类型的杂质通过暴露的场氧化物隔离区的上表面注入到 中心的第一个通道停止隔离区。 在该步骤期间，以较高的剂量和能级注入杂质，使得当从横截面观察时，第一和第二通道停止区域共同形成在各个场氧化物隔离区域下方的T形通道停止区域。 通过减小场氧化物隔离区域和有源区域边缘附近的通道阻挡杂质的浓度，可以降低泄漏电流，并且可以通过降低衬底中寄生电场的强度来提高存储器件的刷新特性。 然而，通过在场氧化物隔离区域的中心处保持相对高浓度的通道阻挡杂质，相邻器件的电隔离可以保持在高水平。

公开(公告)号：US5712927A

公开(公告)日：1998-01-27

申请号：US502413

申请日：1995-07-14

申请人： Jae-Ho Kim ,  Tae-Il Chung ,  Kyung-Sik Son ,  Hyung-Soon Kim

发明人： Jae-Ho Kim ,  Tae-Il Chung ,  Kyung-Sik Son ,  Hyung-Soon Kim

IPC分类号： H04N1/405 ,  G06K9/36

CPC分类号： H04N1/4053

摘要： An image processing system for displaying pixel data on a screen performs a binary-encoding method using error diffusion with edge enhancement. In the method for binary-encoding the image data, pixels to be binary-encoded are divided into normal and edge regions, and the pixel data is binary-encoded in accordance with the divided regions. By using the method, bars on the display screen which are unpleasant to the eye can be removed and an image with good edge sharpness can be obtained.

摘要翻译： 用于在屏幕上显示像素数据的图像处理系统执行使用具有边缘增强的误差扩散的二进制编码方法。 在二进制编码图像数据的方法中，二进制编码的像素被划分为正常和边缘区域，并且像素数据根据划分的区域进行二进制编码。 通过使用该方法，可以去除对眼睛令人不愉快的显示屏幕上的条状物，并且可以获得具有良好边缘清晰度的图像。

公开(公告)号：US5701369A

公开(公告)日：1997-12-23

申请号：US521809

申请日：1995-08-31

申请人： Yong-Ho Moon ,  Jae-Ho Kim ,  Dong-Seek Park

发明人： Yong-Ho Moon ,  Jae-Ho Kim ,  Dong-Seek Park

IPC分类号： H04N7/26 ,  G06T9/00 ,  H04N1/41 ,  G06K9/36

CPC分类号： H04N19/99 ,  G06T9/001

摘要： A fractal image compression method performed in a digital image processing device includes the steps of: dividing image data representative of a composite image into a plurality of range blocks each having a first predetermined size; designating, for each of the range blocks, a plurality of domain blocks each having a second predetermined size, wherein each one of the plurality of domain blocks has a subportion that includes an entire portion of the corresponding range block; calculating coefficients of a contractive transformation function to match a plurality of spacially transformed domain blocks to each range block; calculating distortion errors between the range blocks and their corresponding pluralities of spacially transformed domain blocks; comparing the distortion errors among the spacially transformed domain blocks for each corresponding range block, and selecting a spacially transformed domain block having a minimum distortion error as a maximum similarity block for each corresponding range block; and storing, as a fractal code, a location index and coefficients of the contractive transformation function for each of the maximum similarity blocks.

摘要翻译： 在数字图像处理装置中执行的分形图像压缩方法包括以下步骤：将表示合成图像的图像数据分割成具有第一预定尺寸的多个范围块; 为每个所述范围块指定多个具有第二预定大小的域块，其中所述多个域块中的每一个具有包括相应范围块的整个部分的子部分; 计算收缩变换函数的系数以将多个空间变换的域块匹配到每个范围块; 计算范围块与其相应的多个空间变换域块之间的失真误差; 比较每个相应范围块的空间变换域块之间的失真误差，并且为每个对应的范围块选择具有最小失真误差的空间变换的域块作为最大相似性块; 并且存储作为分形代码的每个最大相似性块的位置索引和收缩变换函数的系数。

公开(公告)号：US5476807A

公开(公告)日：1995-12-19

申请号：US227534

申请日：1994-04-14

申请人： Kang-hyun Lee ,  Jong-seo Hong ,  Hyoung-sub Kim ,  Jae-ho Kim ,  Min-seog Han

发明人： Kang-hyun Lee ,  Jong-seo Hong ,  Hyoung-sub Kim ,  Jae-ho Kim ,  Min-seog Han

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/8242 ,  H01L21/00

CPC分类号： H01L27/10852 ,  H01L21/0337 ,  H01L28/88

摘要： A method for forming a fine pattern, e.g., for forming the storage electrodes of the capacitors of the memory cells of semiconductor memory devices, which includes the steps of depositing a mask layer on the layer to be patterned, depositing a photoresist layer on the mask layer, patterning the photoresist layer, to thereby form a photoresist pattern, anisotropically etching the mask layer, using the photoresist pattern as an etching mask, to thereby form a mask layer pattern, wherein etch by-products are formed on sidewalls of a composite layer comprised of the photoresist pattern and the mask layer pattern, and, etching the layer to be patterned using the composite layer and the etch by-products as an etching mask, to thereby form a fine pattern. The mask layer is made of a material, e.g., a high-temperature oxide, having different physical properties than that of the photoresist. Further, the anisotropic etching process is preferably carried out by means of a plasma etching process using a mixture of CF.sub.4, CHF.sub.4, and Ar gases, with the amount of the etch by-products being controllably adjusted by the ratio of these gases, and/or by controllably adjusting the time, temperature, and/or pressure parameters of this anisotropic etching process.

摘要翻译： 一种用于形成精细图案的方法，例如，用于形成半导体存储器件的存储单元的电容器的存储电极，其包括以下步骤：在待图案化的层上沉积掩模层;在掩模上沉积光致抗蚀剂层 层，图案化光致抗蚀剂层，从而形成光致抗蚀剂图案，使用光致抗蚀剂图案作为蚀刻掩模，各向异性地蚀刻掩模层，从而形成掩模层图案，其中在复合层的侧壁上形成蚀刻副产物 由光致抗蚀剂图案和掩模层图案组成，并且使用复合层蚀刻待图案化层和蚀刻副产物作为蚀刻掩模，从而形成精细图案。 掩模层由具有与光致抗蚀剂不同的物理性质的材料，例如高温氧化物制成。 此外，各向异性蚀刻工艺优选通过使用CF 4，CHF 4和Ar气体的混合物的等离子体蚀刻工艺进行，其中蚀刻副产物的量可由这些气体的比例可控地调节，和/ 或通过可控地调节该各向异性蚀刻工艺的时间，温度和/或压力参数。

公开(公告)号：US10661685B2

公开(公告)日：2020-05-26

申请号：US15484704

申请日：2017-04-11

申请人： Jae Ho Kim ,  Ji Yong Park

发明人： Jae Ho Kim ,  Ji Yong Park

IPC分类号： B60N2/00 ,  B60N2/16 ,  B60N2/90 ,  F16D41/06

摘要： Disclosed herein is a pumping apparatus for a vehicle seat, which includes an input member rotated by torque input from a handle lever, a clutch unit configured to transmit the input torque to a link mechanism of a seat cushion, a brake unit configured to cut off the torque input in reverse from the link mechanism, a housing accommodating the clutch unit therein, and a fixing member coupled to a rear end of the housing, wherein the input member includes a first input member disposed in front of the housing, and a second input member connected to the first input member and accommodated in the housing, and the clutch unit includes a torque transmission member arranged on an outer peripheral surface of the second input member, and an annular control member having a clutch friction surface formed on an inner peripheral surface thereof.

公开(公告)号：US20150067050A1

公开(公告)日：2015-03-05

申请号：US14101563

申请日：2013-12-10

申请人： Jae Ho KIM ,  Ju Il JEON ,  Chang Ki KIM ,  Tae Jung KIM ,  Jeong Ju YOO

发明人： Jae Ho KIM ,  Ju Il JEON ,  Chang Ki KIM ,  Tae Jung KIM ,  Jeong Ju YOO

IPC分类号： H04L29/08

CPC分类号： G06Q50/01 ,  G06Q10/107 ,  H04L67/141 ,  H04L67/16 ,  H04L67/306

摘要： Disclosed is a social network service device. The social network service device includes a message processing unit which receives, from a common smart device, an identifier of a user group which uses the common smart device, and information of a personal smart device which is connected to the common smart device for a multi-screen service, and a social network establishment unit which establishes a social network between common smart devices by modeling a relation between the user group and a user who uses the personal smart device, and a relation between the common smart device and the personal smart device, using the information of the personal smart device, based on the identifier of the user group.

摘要翻译： 公开了一种社交网络服务设备。 社交网络服务设备包括：消息处理单元，其从公共智能设备接收使用公共智能设备的用户组的标识符，以及连接到公共智能设备的个人智能设备的信息，用于多个 以及社交网络建立单元，其通过建模用户组和使用个人智能设备的用户之间的关系以及公共智能设备和个人智能设备之间的关系来建立公共智能设备之间的社交网络 ，基于用户组的标识符，使用个人智能设备的信息。

公开(公告)号：US20150061067A1

公开(公告)日：2015-03-05

申请号：US14337811

申请日：2014-07-22

申请人： Hyun-Ju Kim ,  Jae-June Jang ,  Hoon Chang ,  Jae-Ho Kim ,  Kyu-Heon Cho

发明人： Hyun-Ju Kim ,  Jae-June Jang ,  Hoon Chang ,  Jae-Ho Kim ,  Kyu-Heon Cho

IPC分类号： H01L29/872 ,  H01L29/36

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/36 ,  H01L29/66143

摘要： A semiconductor device includes an epitaxial layer of a first conductive type; an anode electrode and a cathode electrode arranged on the epitaxial layer to be separated from each other; a first drift layer of the first conductive type formed in the epitaxial layer; a Schottky contact area at a region of contact between the anode electrode and the first drift layer; an impurity region of a second conductive type different from the first conductive type at the epitaxial layer; and an insular impurity region formed below the Schottky contact area.

摘要翻译： 半导体器件包括第一导电类型的外延层; 布置在所述外延层上以彼此分离的阳极电极和阴极电极; 在外延层中形成的第一导电类型的第一漂移层; 在阳极电极和第一漂移层之间的接触区域处的肖特基接触区域; 在外延层处不同于第一导电类型的第二导电类型的杂质区; 以及形成在肖特基接触区域下方的岛状杂质区域。

公开(公告)号：US20130280859A1

公开(公告)日：2013-10-24

申请号：US13977725

申请日：2011-11-23

申请人： Jae-Ho Kim ,  Dong-Gun Oh ,  Do-Hyun Choi ,  Jin-Wook Moon

发明人： Jae-Ho Kim ,  Dong-Gun Oh ,  Do-Hyun Choi ,  Jin-Wook Moon

IPC分类号： H01L29/66

CPC分类号： H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a gate electrode; source and drain electrodes spaced apart in a up and down direction from the gate electrode and in a horizontal direction from each other; a gate dielectric formed between the gate electrode and the source electrode and between the gate electrode and the drain electrode; and an active layer formed between the gate dielectric and the source electrode and between the gate dielectric and the drain electrode, wherein the active layer is formed of at least two zinc oxide thin layers doped with an element.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：栅电极; 源电极和漏电极在上下方向上从栅电极彼此间隔开，并且在水平方向彼此间隔开; 在所述栅电极和所述源电极之间以及所述栅电极和所述漏极之间形成的栅极电介质; 以及形成在所述栅极电介质和所述源极之间以及所述栅极电介质和所述漏极之间的有源层，其中所述有源层由掺杂有元素的至少两个氧化锌薄层形成。

公开(公告)号：USD682923S1

公开(公告)日：2013-05-21

申请号：US29423544

申请日：2012-06-01

申请人： Yun Joo Kim ,  Yoo Seok Kim ,  Woo Suk Park ,  Jae Ho Kim ,  Hyun Hee You

设计人： Yun Joo Kim ,  Yoo Seok Kim ,  Woo Suk Park ,  Jae Ho Kim ,  Hyun Hee You