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    Methods of forming integrated semiconductor devices having improved channel-stop regions therein, and devices formed thereby
    1.
    发明授权
    Methods of forming integrated semiconductor devices having improved channel-stop regions therein, and devices formed thereby 失效
    形成其中具有改善的通道停止区域的集成半导体器件的方法，以及由此形成的器件

    公开(公告)号：US5786265A

    公开(公告)日：1998-07-28

    申请号：US647874

    申请日：1996-05-09

    申请人： Min-wk Hwang ,  Hung-mo Yang ,  Jae-ho Kim ,  Won-taek Choi ,  Won-cheol Hong

    发明人： Min-wk Hwang ,  Hung-mo Yang ,  Jae-ho Kim ,  Won-taek Choi ,  Won-cheol Hong

    IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L27/08

    CPC分类号： H01L21/76216

    摘要： Methods of forming semiconductor devices containing field oxide and channel-stop isolation regions therein include the steps of forming a plurality of first channel-stop isolation regions by implanting first conductivity type impurities at a first dose level into a face of a semiconductor substrate and then forming respective field oxide isolation regions at the locations where the first channel-stop isolation regions have been implanted. A conductive layer, which contacts active regions of the substrate and covers the field oxide isolation regions, is then patterned over the field oxide isolation regions to expose central portions of the upper surfaces of the field oxide isolation regions. The patterned conductive layer constitutes a landing pad layer which is preferably used as a mask during the formation of second channel-stop isolation regions in the substrate, by implanting first conductivity type impurities through the exposed upper surfaces of the field oxide isolation regions, into the centers of the first channel-stop isolation regions. During this step, the impurities are implanted at a higher dose and energy level so that the first and second channel-stop regions collectively form T-shaped channel-stop regions underneath respective field oxide isolation regions, when viewed in transverse cross-section. By reducing the concentration of the channel-stop impurities near the edges of the field oxide isolation regions and active regions, leakage currents can be reduced and refresh characteristics of memory devices can be improved by reducing the strength of parasitic electric fields in the substrate. However, by maintaining relatively high concentrations of the channel-stop impurities under the center of the field oxide isolation regions, electrical isolation of adjacent devices can be maintained at high levels.

    摘要翻译： 在其中形成包含场氧化物和通道停止隔离区的半导体器件的方法包括以下步骤：通过将第一剂量水平的第一导电类型杂质注入到半导体衬底的表面中然后形成多个第一通道 - 停止隔离区域 在已经植入第一通道 - 停止隔离区的位置处的各个场氧化物隔离区。 然后，在场氧化物隔离区域上形成接触衬底的活性区域并覆盖场氧化物隔离区域的导电层，以暴露场氧化物隔离区域的上表面的中心部分。 图案化的导电层构成着陆焊盘层，其在衬底中形成第二通道停止隔离区域期间优选用作掩模，通过将第一导电类型的杂质通过暴露的场氧化物隔离区的上表面注入到 中心的第一个通道停止隔离区。 在该步骤期间，以较高的剂量和能级注入杂质，使得当从横截面观察时，第一和第二通道停止区域共同形成在各个场氧化物隔离区域下方的T形通道停止区域。 通过减小场氧化物隔离区域和有源区域边缘附近的通道阻挡杂质的浓度，可以降低泄漏电流，并且可以通过降低衬底中寄生电场的强度来提高存储器件的刷新特性。 然而，通过在场氧化物隔离区域的中心处保持相对高浓度的通道阻挡杂质，相邻器件的电隔离可以保持在高水平。

    Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof
    2.
    发明授权
    Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
    电荷阱闪存器件及其制造方法及其读/写操作控制方法

    公开(公告)号：US07615446B2

    公开(公告)日：2009-11-10

    申请号：US11580102

    申请日：2006-10-13

    申请人： Tae-whan Kim ,  Young-ho Kim ,  Jae-ho Kim ,  Jea-hun Jung ,  Chong-seung Yoon

    发明人： Tae-whan Kim ,  Young-ho Kim ,  Jae-ho Kim ,  Jea-hun Jung ,  Chong-seung Yoon

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L29/7887

    摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.

    摘要翻译： 一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层 位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

    Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof
    5.
    发明申请
    Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
    电荷阱闪存器件及其制造方法及其读/写操作控制方法

    公开(公告)号：US20070102750A1

    公开(公告)日：2007-05-10

    申请号：US11580102

    申请日：2006-10-13

    申请人： Tae-whan Kim ,  Young-ho Kim ,  Jae-ho Kim ,  Jea-hun Jung ,  Chong-seung Yoon

    发明人： Tae-whan Kim ,  Young-ho Kim ,  Jae-ho Kim ,  Jea-hun Jung ,  Chong-seung Yoon

    IPC分类号： H01L29/76

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L29/7887

    摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.

    摘要翻译： 一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层 位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

    Image forming apparatus and method
    6.
    发明申请
    Image forming apparatus and method 有权
    图像形成装置及方法

    公开(公告)号：US20060061792A1

    公开(公告)日：2006-03-23

    申请号：US11221757

    申请日：2005-09-09

    申请人： Jae-ho Kim ,  Hyuck Kim

    发明人： Jae-ho Kim ,  Hyuck Kim

    IPC分类号： G06F3/12

    CPC分类号： G06F3/1211 ,  G06F3/1204 ,  G06F3/1245 ,  G06F3/1284 ,  G06F3/1285

    摘要： An image forming apparatus having a file-format conversion function and a method thereof. The image forming apparatus is capable of performing a data communication with an external memory device. The image forming apparatus includes an interface unit to receive a first file from the external memory device and to transmit a second file to the external memory device, and a file converter to convert a format of the first file from a first format into a second format according to information on the first and second files. Thus, the format of the received file can be converted in the image forming apparatus in a simple and speed way.

    摘要翻译： 一种具有文件格式转换功能的图像形成装置及其方法。 图像形成装置能够执行与外部存储装置的数据通信。 图像形成装置包括：接口单元，用于从外部存储装置接收第一文件，并将第二文件发送到外部存储装置;以及文件转换器，用于将第一文件的格式从第一格式转换为第二格式 根据第一和第二个文件的信息。 因此，可以以简单且快速的方式在图像形成装置中转换接收的文件的格式。

    METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    8.
    发明申请
    METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
    形成金属或金属氮化物图案的方法和制造半导体器件的方法

    公开(公告)号：US20130040448A1

    公开(公告)日：2013-02-14

    申请号：US13570812

    申请日：2012-08-09

    申请人： Joo-Hyung Yang ,  Yool Kang ,  Hyung-Rae Lee ,  Kyu-Sik Shin ,  Jae-ho Kim ,  Dong-Jun Lee

    发明人： Joo-Hyung Yang ,  Yool Kang ,  Hyung-Rae Lee ,  Kyu-Sik Shin ,  Jae-ho Kim ,  Dong-Jun Lee

    IPC分类号： H01L21/312 ,  H01L21/336

    CPC分类号： H01L21/28123 ,  H01L21/0273 ,  H01L21/32139 ,  H01L21/76838

    摘要： In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask.

    摘要翻译： 在形成金属或金属氮化物图形的方法中，在基板上形成金属或金属氮化物层，并且在金属或金属氮化物层上形成光刻胶图案。 在金属或金属氮化物层和光致抗蚀剂图案上涂覆过涂层组合物以在光致抗蚀剂图案上形成覆盖层。 该覆盖组合物包括具有侧基或分支和溶剂的胺基的聚合物。 通过用亲水溶液洗涤除去剩余部分的外涂层组合物。 使用覆盖层和光致抗蚀剂图案作为蚀刻掩模来部分去除金属或金属氮化物层。

    Method of performing operations in image forming apparatus, image forming apparatus and image forming system for performing the method
    10.
    发明申请
    Method of performing operations in image forming apparatus, image forming apparatus and image forming system for performing the method 审中-公开
    在用于执行该方法的图像形成装置，图像形成装置和图像形成系统中执行操作的方法

    公开(公告)号：US20120127502A1

    公开(公告)日：2012-05-24

    申请号：US13317247

    申请日：2011-10-13

    申请人： Jae-ho Kim ,  Jin-ah Heo

    发明人： Jae-ho Kim ,  Jin-ah Heo

    IPC分类号： G06F15/00

    CPC分类号： H04N1/00233 ,  H04N1/0023 ,  H04N2201/0094

    摘要： A method of performing operations in an image forming apparatus, the image forming apparatus and an image forming system for performing the method. The method includes: determining whether a user selects an input button for performing a predetermined operation on image data obtained by capturing from a host device connected to the image forming apparatus; if it is determined that the input button is selected, determining a current operation mode of the image forming apparatus from among the plurality of operation modes; and performing an operation, which was previously set in correspondence to the operation mode, on the image data, according to a result of the determining.

    摘要翻译： 一种在图像形成装置，图像形成装置和用于执行该方法的图像形成系统中执行操作的方法。 该方法包括：确定用户是否从连接到图像形成设备的主机设备中获取的图像数据上选择用于执行预定操作的输入按钮; 如果确定选择了输入按钮，则从多个操作模式中确定图像形成装置的当前操作模式; 并且根据确定的结果对图像数据执行与操作模式相对应的先前设置的操作。