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    Method and system for handover in mobile communication network
    73.
    发明授权
    Method and system for handover in mobile communication network 有权
    移动通信网中切换的方法和系统

    公开(公告)号：US07801081B2

    公开(公告)日：2010-09-21

    申请号：US11847843

    申请日：2007-08-30

    申请人： Yong-Seouk Choi ,  Kyung-Soo Kim

    发明人： Yong-Seouk Choi ,  Kyung-Soo Kim

    IPC分类号： H04Q7/20 ,  H04Q7/00 ,  H04B7/216

    CPC分类号： H04W36/0083 ,  H04W84/005

    摘要： A handover method according to an embodiment of the present invention includes: receiving neighboring base station information at a wireless relay station providing a wireless communication service moving together with a plurality of subscriber stations that move along the same moving path; performing scanning to check a wireless environment state of a neighboring base station using the received neighboring base station information; performing handover of the plurality of subscriber stations to a target base station as a single handover unit, when a handover condition is met during the scanning; and notifying the subscriber station of completion of handover preparation with the target base station.

    摘要翻译： 根据本发明实施例的切换方法包括：在无线中继站处接收邻近基站信息，所述无线中继站提供与沿着相同移动路径移动的多个用户站一起移动的无线通信服务; 执行扫描以使用所接收的相邻基站信息来检查相邻基站的无线环境状态; 当在扫描期间满足切换条件时，执行作为单个切换单元的多个用户站到目标基站的切换; 并向目标基站通知用户台完成切换准备。

    APPARATUS AND METHOD FOR FAIRLY ALLOCATING RESOURCES IN BAND AMC MODE OF WIDEBAND WIRELESS ACCESS SYSTEM
    75.
    发明申请
    APPARATUS AND METHOD FOR FAIRLY ALLOCATING RESOURCES IN BAND AMC MODE OF WIDEBAND WIRELESS ACCESS SYSTEM 有权
    宽带无线接入系统BAND AMC模式下公平分配资源的设备与方法

    公开(公告)号：US20100182961A1

    公开(公告)日：2010-07-22

    申请号：US12377265

    申请日：2007-03-27

    申请人： Eun-Kyung Kim ,  Kyung-Soo Kim

    发明人： Eun-Kyung Kim ,  Kyung-Soo Kim

    IPC分类号： H04W72/00

    CPC分类号： H04W72/1284 ,  H04L1/0003 ,  H04L1/0009 ,  H04L1/0026 ,  H04L1/0027 ,  H04W8/24 ,  H04W72/0453 ,  H04W72/1231

    摘要： Disclosed are an apparatus and a method for fairly allocating resources in a band adaptive modulation and coding (band AMC) mode of a wideband wireless access system. There is provided a method of fairly allocating resources in a band AMC mode of a wideband wireless access system when two or more mobile stations simultaneously transmit channel quality information (CQI) through an overlapping band. The method includes: when two or more mobile stations transmit the channel quality information (CQI) through an overlapping band, examining whether the mobile stations transmit information indicating that the overlapping band is the highest bands thereof; comparing tag values of the mobile stations transmitting the information indicating that the overlapping band is the highest band thereof and selecting one of the tag values having the highest priority, the tag values being given when the mobile stations transmit the information on the band at the beginning and the tag values stored for every frame being reset; allocating a sub channel corresponding to the highest band to the mobile station having the selected tag value; and changing the tag values of the mobile stations transmitting the information indicating that the overlapping band is the highest band thereof on the basis of the result of the comparison to reset the tag values.

    摘要翻译： 公开了一种用于在宽带无线接入系统的频带自适应调制和编码（频带AMC）模式中公平分配资源的装置和方法。 提供了当两个或多个移动站同时通过重叠频带发送信道质量信息（CQI）时，在宽带无线接入系统的频带AMC模式下公平分配资源的方法。 该方法包括：当两个或多个移动站通过重叠频带发送信道质量信息（CQI）时，检查移动站是否发送表示重叠频带是其最高频带的信息; 比较发送表示重叠频带是其最高频带的信息的移动站的标签值，并选择具有最高优先级的标签值中的一个，当移动站在开始时发送关于频带的信息时给出标签值 并且为每个帧复制存储的标签值; 将具有所选标签值的移动站分配与最高频带对应的子信道; 以及基于比较结果，改变发送表示重叠频带是其最高频带的信息的移动站的标签值，以重置标签值。

    LOW-POWER RELAXATION OSCILLATOR AND RFID TAG USING THE SAME
    76.
    发明申请
    LOW-POWER RELAXATION OSCILLATOR AND RFID TAG USING THE SAME 审中-公开
    低功耗松弛振荡器和使用该功能的RFID标签

    公开(公告)号：US20100141348A1

    公开(公告)日：2010-06-10

    申请号：US12565240

    申请日：2009-09-23

    申请人： Tae Young KANG ,  Kyung Hwan PARK ,  Seok Bong HYUN ,  Tae Wook KANG ,  Kyung Soo KIM ,  Sung Eun KIM ,  Jung Bum KIM ,  Hey Jin MYOUNG ,  Hyung II PARK ,  In Gi LIM ,  Byoung Gun CHOI ,  Chang Hee HYOUNG ,  Jung Hwan HWANG ,  Sung Weon KANG

    发明人： Tae Young KANG ,  Kyung Hwan PARK ,  Seok Bong HYUN ,  Tae Wook KANG ,  Kyung Soo KIM ,  Sung Eun KIM ,  Jung Bum KIM ,  Hey Jin MYOUNG ,  Hyung II PARK ,  In Gi LIM ,  Byoung Gun CHOI ,  Chang Hee HYOUNG ,  Jung Hwan HWANG ,  Sung Weon KANG

    IPC分类号： H03K3/023

    CPC分类号： H03K3/03 ,  H03K3/0231

    摘要： There is provided a low-power relaxation oscillator. The low-power relaxation oscillator may include: a constant current generation unit generating a current having a predetermined magnitude; a current varying unit controlling the current generated from the constant current generation unit according to a clock control signal to output the controlled current; a first controller and a second controller connected in parallel with output terminals of the current varying unit and passing or interrupting the current supplied from the current varying unit; a PMOS charging/discharging unit arranged between an output terminal of the first controller and an output terminal of the second controller; a first comparator and a second comparator connected to both ends of the PMOS charging/discharging unit, respectively, and each outputting a high or low level voltage upon receiving voltage charged in the PMOS charging/discharging unit; and a latch circuit delaying the voltages output from the first and second comparators to output oscillation signals.

    摘要翻译： 提供了一个低功耗松弛振荡器。 低功率张弛振荡器可以包括：产生具有预定大小的电流的恒定电流产生单元; 电流变化单元，根据时钟控制信号控制从恒定电流产生单元产生的电流，以输出受控电流; 第一控制器和第二控制器，与电流变化单元的输出端并联连接，并通过或中断从电流变化单元提供的电流; PMOS充电/放电单元，布置在第一控制器的输出端和第二控制器的输出端之间; 分别连接到PMOS充电/放电单元的两端的第一比较器和第二比较器，并且在接收到PMOS充电/放电单元中充电的电压时，分别输出高电平或低电平电压; 以及将从第一和第二比较器输出的电压延迟以输出振荡信号的锁存电路。

    AGENT COMPRISING G-CSF FOR PREVENTION AND TREATMENT OF DIABETIC PERIPHERAL NEUROPATHY
    78.
    发明申请
    AGENT COMPRISING G-CSF FOR PREVENTION AND TREATMENT OF DIABETIC PERIPHERAL NEUROPATHY 审中-公开
    包含G-CSF用于预防和治疗糖尿病性外周神经病变的药剂

    公开(公告)号：US20100048869A1

    公开(公告)日：2010-02-25

    申请号：US12447798

    申请日：2007-10-29

    申请人： Kyung-Soo Kim ,  Ji-yong Jin

    发明人： Kyung-Soo Kim ,  Ji-yong Jin

    IPC分类号： C07K14/535

    CPC分类号： A61K38/193

    摘要： Disclosed is an agent for preventing and treating diabetic peripheral neuropathy including a granulocyte colony stimulating factor (G-CSF) as an active ingredient, which is able to improve nerve conduction velocity and pain sensitivity by regenerating blood vessels in peripheral tissues and rehabilitating damaged nerve tissues.

    摘要翻译： 公开了一种预防和治疗包括粒细胞集落刺激因子（G-CSF）作为活性成分的糖尿病性周围神经病变的药剂，其能够通过再生周围组织的血管和修复受损的神经组织来改善神经传导速度和疼痛敏感性 。

    Methods of forming integrated circuit device gate structures
    80.
    发明授权
    Methods of forming integrated circuit device gate structures 有权
    形成集成电路器件门结构的方法

    公开(公告)号：US07550347B2

    公开(公告)日：2009-06-23

    申请号：US11510059

    申请日：2006-08-25

    申请人： Sam-jong Choi ,  Yong-kwon Kim ,  Kyoo-chul Cho ,  Kyung-soo Kim ,  Jae-ryong Jung ,  Tae-soo Kang ,  Sang-Sig Kim

    发明人： Sam-jong Choi ,  Yong-kwon Kim ,  Kyoo-chul Cho ,  Kyung-soo Kim ,  Jae-ryong Jung ,  Tae-soo Kang ,  Sang-Sig Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/28282 ,  B82Y10/00 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/792 ,  H01L29/7923

    摘要： Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

    摘要翻译： 形成用于集成电路存储器件的栅极结构的方法包括在集成电路衬底上形成具有低于7的介电常数的第一介电层。 将元素周期表第4组的选定元素的离子注入到第一电介质层中，以在第一电介质层中形成具有小于约0.5厘米每秒（cm 2 / s）的热扩散率的离子，从而在第一电介质层中形成电荷存储区， 在电荷存储区域下的隧道介电层。 金属氧化物第二电介质层形成在第一电介质层，第二电介质层上。 包括第一和第二电介质层的衬底被热处理以在电荷存储区域中形成多个离散的电荷存储纳米晶体，并且在第二电介质层上形成栅极电极层。 还提供用于集成电路器件和存储单元的栅极结构。