Optoelectronic Measuring Device for Measuring an Intensity of Electromagnetic Radiation

    公开(公告)号:US20220228909A1

    公开(公告)日:2022-07-21

    申请号:US17612916

    申请日:2020-05-12

    Abstract: In an embodiment, an optoelectronic measuring device 1ncludes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

    Arrangement Having Semiconductor Components that Emit Electromagnetic Radiation and Production Method Therefor

    公开(公告)号:US20220223570A1

    公开(公告)日:2022-07-14

    申请号:US17614249

    申请日:2020-05-27

    Abstract: In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a connection layer.

    Method for Producing a Semiconductor Body, A Semiconductor Body and an Optoelectronic Device

    公开(公告)号:US20220199405A1

    公开(公告)日:2022-06-23

    申请号:US17127264

    申请日:2020-12-18

    Abstract: In an embodiment, a method includes providing a substrate and epitaxially growing a semiconductor layer of a semiconductor material on the substrate using physical vapor deposition, wherein the semiconductor material has a tetragonal phase, wherein the semiconductor material has the general formula: (In1-xMx)(Te1-yZy), and wherein M=Ga, Zn, Cd, Hg, Tl, Sn, Pb, Ge, or combinations thereof, Z═As, S, Se, Sb, or combinations thereof, x=0-0.1, and y=0-0.1, or wherein the semiconductor material has the general formula: (In1-xTlx)(Te1-ySey) with x=0-1 and y=0-1.

    OPTOELECTRONIC COMPONENT, SYSTEM AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20220181266A1

    公开(公告)日:2022-06-09

    申请号:US17602051

    申请日:2020-04-08

    Inventor: Michael BRANDL

    Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip and an electronic first storage medium. The first storage medium electrically stores first component information. The component can be uniquely identified via the first component information. The optoelectronic component also includes a second storage medium which can be read out wirelessly at least in an unmounted state of the component. The second storage medium stores second component information that is representative of the first component information.

    COMPONENT FOR A DISPLAY DEVICE, DISPLAY DEVICE AND METHOD OF OPERATING THE DISPLAY DEVICE

    公开(公告)号:US20220180808A1

    公开(公告)日:2022-06-09

    申请号:US17602232

    申请日:2020-03-11

    Inventor: Daniel RICHTER

    Abstract: A component for a display device, a display device and a method for operating the display device, a computer program and a storage medium are disclosed. The component comprises LED chips arranged in rows, wherein one red, one green and one blue LED chip are arranged alternately per row in the extension direction of the respective row and per column obliquely to the extension direction, and the rows have an offset from one another in the extension direction.

    Optoelectronic component comprising a laser diode

    公开(公告)号:US11355896B2

    公开(公告)日:2022-06-07

    申请号:US16488573

    申请日:2018-02-27

    Abstract: An optoelectronic component comprising a laser diode is disclosed. In an embodiment an optoelectronic component includes a carrier, a laser diode arranged on the carrier, wherein the laser diode is configured to emit electromagnetic radiation in a lateral radiation and a radiation-guiding layer arrangement located in front of the lateral face of the laser diode, wherein the layer arrangement includes at least a first layer and a second layer, wherein the first layer is arranged on the carrier, wherein the second layer is arranged on the first layer, wherein the first layer and the second layer abut each other, wherein the second layer is transparent for the electromagnetic radiation, wherein the first layer has a smaller refractive index than the second layer, and wherein the layer arrangement is arranged such that the electromagnetic radiation of the laser diode is coupled into the second layer, guided in the second layer to a radiation surface of the second layer, and emitted via the radiation surface of the second layer.

    Optoelectronic device comprising a phosphor plate and method of manufacturing the optoelectronic device

    公开(公告)号:US11348906B2

    公开(公告)日:2022-05-31

    申请号:US16982066

    申请日:2018-03-21

    Inventor: Choon Kim Lim

    Abstract: An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.

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