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    Method for Producing Optoelectronic Semiconductor Chips, and Optoelectronic Semiconductor Chip
    5.
    发明申请
    Method for Producing Optoelectronic Semiconductor Chips, and Optoelectronic Semiconductor Chip 有权

    公开(公告)号：US20220384680A1

    公开(公告)日：2022-12-01

    申请号：US17765657

    申请日：2020-09-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Felix Feix ,  Ines Pietzonka ,  Petrus Sundgren

    IPC: H01L33/30 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

    Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o

    Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip
    6.
    发明授权
    Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip 有权

    公开(公告)号：US12224379B2

    公开(公告)日：2025-02-11

    申请号：US17765657

    申请日：2020-09-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Felix Feix ,  Ines Pietzonka ,  Petrus Sundgren

    IPC: H01L33/30 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06

    Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o

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