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公开(公告)号:US20220172976A1
公开(公告)日:2022-06-02
申请号:US17607804
申请日:2020-04-21
发明人: Andreas Biebersdorf , Stefan Illek , Christoph Klemp , Felix Feix , Ines Pietzonka , Petrus Sundgren , Christian Berger , Ana Kanevce , Karl Engl
IPC分类号: H01L21/683 , H01L25/075
摘要: In an embodiment an arrangement includes a plurality of semiconductor chips arranged on a carrier, wherein the carrier is a growth substrate or an auxiliary carrier, wherein the semiconductor chips are arranged at grid points of a grid, and wherein the grid is a hexagonal grid deformed by a deformation factor along at least one of a plurality of axes of the grid and has a shearing along at least one of the plurality of axes of the grid.
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公开(公告)号:US20190214364A1
公开(公告)日:2019-07-11
申请号:US16329449
申请日:2017-08-30
发明人: Philipp Kreuter , Andreas Biebersdorf , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
IPC分类号: H01L23/00
摘要: A method of aligning semiconductor chips in a medium includes providing an electrically insulating liquid medium; providing semiconductor chips; forming a suspension with the medium and the semiconductor chips; exposing the semiconductor chips to electromagnetic radiation that generates free charge carriers in the semiconductor chips; arranging the suspension in an electric field in which the semiconductor chips are aligned along the electric field; and curing the medium after aligning the semiconductor chips.
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公开(公告)号:US20170200869A1
公开(公告)日:2017-07-13
申请号:US15314084
申请日:2015-06-10
CPC分类号: H01L33/504 , H01L33/04 , H01L33/502 , H01L33/505 , H01L33/52 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要: An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.
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公开(公告)号:US20220123182A1
公开(公告)日:2022-04-21
申请号:US17645644
申请日:2021-12-22
发明人: Andreas Biebersdorf , Michael Brandl , Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Erwin Lang , Andreas Leber , Marc Philippens , Thomas Schwarz , Julia Stolz , Xue Wang , Karsten Diekmann , Karl Engl , Siegfried Herrmann , Stefan Illek , Ines Pietzonka , Andreas Rausch , Simon Schwalenberg , Petrus Sundgren , Georg Bogner , Christoph Klemp , Christine Rafael , Felix Feix , Eva-Maria Rummel , Nicole Heitzer , Marie Assmann , Christian Berger , Ana Kanevce
IPC分类号: H01L33/52 , H01L33/50 , H01L33/60 , H01L33/04 , H01L25/075
摘要: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μ.
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公开(公告)号:US20220059737A1
公开(公告)日:2022-02-24
申请号:US17515138
申请日:2021-10-29
发明人: Andreas Biebersdorf , Michael Brandl , Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Erwin Lang , Andreas Leber , Marc Philippens , Thomas Schwarz , Julia Stolz , Xue Wang , Karsten Diekmann , Karl Engl , Siegfried Herrmann , Stefan Illek , Ines Pietzonka , Andreas Rausch , Simon Schwalenberg , Petrus Sundgren , Georg Bogner , Christoph Klemp , Christine Rafael , Felix Feix , Eva-Maria Rummel , Nicole Heitzer , Marie Assmann , Christian Berger , Ana Kanevce
IPC分类号: H01L33/52 , H01L33/50 , H01L33/60 , H01L33/04 , H01L25/075
摘要: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US10217909B2
公开(公告)日:2019-02-26
申请号:US15314084
申请日:2015-06-10
摘要: An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.
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7.
公开(公告)号:US20180018940A1
公开(公告)日:2018-01-18
申请号:US15645060
申请日:2017-07-10
发明人: Andreas Biebersdorf , Philipp Kreuter , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
CPC分类号: G09G5/10 , G09G3/32 , G09G2300/026 , G09G2300/0452 , G09G2320/0233 , G09G2320/0242 , G09G2320/045 , G09G2320/0626 , G09G2320/0666 , G09G2320/0693 , G09G2360/142 , G09G2360/144 , G09G2360/148
摘要: A method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, wherein the display apparatus has a multiplicity of pixels each arranged for adjustable emitted radiation of mixed light, the pixels each include at least two light-emitting diodes and, in operation, the light-emitting diodes emit in various colors so that the mixed light is composed of light of these light-emitting diodes, at least some of the pixels each include at least one light-emitting diode, which at least intermittently is operated as a photodetector and measures a brightness, by the measured brightness, an emittance of each of the affected light-emitting diodes or of the affected pixel is ascertained, and the light-emitting diodes are triggered in accordance with the ascertained emittance so that aging of the light-emitting diodes is at least partly compensated for.
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公开(公告)号:US20220393059A1
公开(公告)日:2022-12-08
申请号:US17771368
申请日:2020-10-06
发明人: Korbinian Perzlmaier , Peter Stauß , Alexander F. Pfeuffer , Christoph Klemp , Kerstin Neveling , Andreas Biebersdorf
IPC分类号: H01L33/00 , H01L21/683
摘要: In an embodiment a component composite includes an auxiliary carrier, a plurality of components, a retaining structure and an electrically conductive sacrificial layer, wherein each of the components has a connection layer which faces the sacrificial layer and is electrically conductively connected to the sacrificial layer, wherein the sacrificial layer is arranged in vertical direction between the auxiliary carrier and the components, and wherein the sacrificial layer is to be removable and the components are mechanically connected to the auxiliary carrier only via the retaining structure in addition to the sacrificial layer.
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公开(公告)号:US10763238B2
公开(公告)日:2020-09-01
申请号:US16329449
申请日:2017-08-30
发明人: Philipp Kreuter , Andreas Biebersdorf , Christoph Klemp , Jens Ebbecke , Ines Pietzonka , Petrus Sundgren
IPC分类号: H01L23/00 , H01L33/00 , H01L25/075
摘要: A method of aligning semiconductor chips in a medium includes providing an electrically insulating liquid medium; providing semiconductor chips; forming a suspension with the medium and the semiconductor chips; exposing the semiconductor chips to electromagnetic radiation that generates free charge carriers in the semiconductor chips; arranging the suspension in an electric field in which the semiconductor chips are aligned along the electric field; and curing the medium after aligning the semiconductor chips.
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10.
公开(公告)号:US20180145234A1
公开(公告)日:2018-05-24
申请号:US15577045
申请日:2016-05-19
发明人: Thomas Schwarz , Andreas Biebersdorf , Dirk Becker , Bernd Barchmann , Björn Hoxhold , Philipp Schlosser , Andreas Waldschik
IPC分类号: H01L33/60 , H01L33/62 , H01L33/00 , H01L25/075
CPC分类号: H01L33/60 , H01L25/0753 , H01L33/005 , H01L33/486 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/48137 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2933/0033 , H01L2933/0075 , H01L2924/00012 , H01L2224/4554
摘要: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.
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