Abstract:
A display device and a driving method using four color pixels, a signal processor that converts three input image signals having gray levels to four output image signals that display four colors based on a look-up table without separate gamma conversion; and a data driver that generates a data voltage based on the output image signal and that supplies the data voltage to the pixels, thereby simplifying signal processing.
Abstract:
Disclosed is a method for controlling transmission of fax data according to a data outputting way of a receiving part, the method comprising the steps of: scanning and storing a document to be transmitted from a facsimile of a transmitting part to a facsimile of the receiving part; when the document is completely scanned, dialing a pre-inputted telephone number of the receiving part; after the receiving part telephone number is dialed, requiring and receiving the data outputting way from the receiving part facsimile, in the case that a call for transmitting data of the document is connected between the transmitting part facsimile and the receiving part facsimile; and transmitting the stored document data according to the received data outputting way.
Abstract:
According to one aspect, a memory cell array includes a bit line connected to a plurality of nonvolatile memory cells, where the nonvolatile memory cells are selectively programmable in any one of at least first, second, third and fourth threshold voltage states, and where the first, second, third and fourth threshold voltage states correspond to four different data values defined by first and second bits. A page buffer circuit stores a logic value as main latch data and is responsive to a main latch signal to selectively flip the logic value of the main latch data according to a voltage level of the bit line. A sub-latch circuit stores a logic value as sub-latch data and is responsive to a sub-latch signal to selectively flip the logic value of the sub-latch data according to the voltage level of the bit line. The memory device is operable in a read mode which reads the threshold voltage state of the non-volatile memory cells and a programming mode which programs the threshold voltage state of the non-volatile memory cells, wherein the page buffer circuit is selectively responsive to the sub-latch data to inhibit flipping of the logic value of the main latch data in the programming mode.
Abstract:
High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
Abstract:
The invention provides a method of programming in a nonvolatile semiconductor memory device, having a plurality of memory cell strings connected to a plurality of bitlines and constructed of a plurality of memory cell transistors whose gates are coupled to a plurality of wordlines, and a plurality of registers corresponding to the bitlines. The method involves applying a first voltage to a first one of the bitlines and applying a second voltage to a second one of the bitline, the first bitline being adjacent to the second bitline, the first and second voltages being supplied from the registers; electrically isolating the first and second bitlines from their corresponding registers; charging the first bitline up to a third voltage higher than the first voltage and lower than the second voltage; and applying a fourth voltage to a wordline after cutting off current paths into the first and second bitlines.
Abstract:
A flash memory device including a memory cell array block including a plurality of flash memory cells. A program verify voltage generating unit variably generates a program verify voltage that verifies flash memory cells programming. A wordline level selecting unit transfers the program verify voltage to the flash memory cells. And a page buffer, including a latch, stores flash memory cell data and resets the latch whenever the program verify voltage is lowered.
Abstract:
The invention provides a method of programming in a nonvolatile semiconductor memory device, having a plurality of memory cell strings connected to a plurality of bitlines and constructed of a plurality of memory cell transistors whose gates are coupled to a plurality of wordlines, and a plurality of registers corresponding to the bitlines. The method involves applying a first voltage to a first one of the bitlines and applying a second voltage to a second one of the bitline, the first bitline being adjacent to the second bitline, the first and second voltages being supplied from the registers; electrically isolating the first and second bitlines from their corresponding registers; charging the first bitline up to a third voltage higher than the first voltage and lower than the second voltage; and applying a fourth voltage to a wordline after cutting off current paths into the first and second bitlines.
Abstract:
A semiconductor chip molding apparatus includes an upper platen including an upper mold, a lower platen including a lower mold having a molding block configured to receive a lead frame, a controller, and an electrical detector for forming an electrical circuit between the controller and the lead frame when the lead frame is oriented improperly on the lower mold. A low-level test voltage is imparted to at least the lower mold. As a result, an electrical signal will flow from the detecting block when the lead frame rests on the detecting block. When such a signal is detected, therefore, the lead frame is determined as having been improperly set on the molding block. The signal generated is detected by a controller and used thereby to interrupt the operation of the molding apparatus.
Abstract:
A beam index type cathode ray tube having a screen divided into a plurality of areas and a plurality of electron guns corresponding to the divided screen areas. The beam index type cathode ray tube includes a tube of which inner atmosphere is maintained in a vacuum state and a screen formed at one side of an inner surface of the tube. The screen has phosphor stripes and index stripes. A plurality of electron guns are mounted in the tube facing the screen and a plurality of deflectors are mounted on the tube corresponding to the electron guns to deflect electron beams which are radiated from the electron guns to the screen. A plurality of detectors are mounted on the tube corresponding to the electron guns to sense lights emitted from the index stripes.
Abstract:
A micro-strip patch antenna for a radiotelephone transceiver includes a dielectric ceramic module for transmission and reception having a first ground plate, just one dielectric ceramic part for synchronizing frequencies, a conductive patch on the dielectric ceramic part for transmitting and receiving electromagnetic waves, transmission and reception power supply terminals projecting from different sides of the conductive patch. The antenna also has printed circuit board having a base, a second ground plate on the base to contact the first, and strip lines formed on the base so as to be adjacent but spaced from to the ground plates. The strip lines take care of impedance matching, and antenna provides for the use of a single channel power supply without modification.