公开(公告)号：US12211719B2

公开(公告)日：2025-01-28

申请号：US17410241

申请日：2021-08-24

Applicant: Tokyo Electron Limited

Inventor： Wataru Matsumoto ,  Takehiro Shindo

IPC: H01L21/677 ,  H01L21/67

Abstract: A method of controlling a substrate transfer system including a transfer mechanism having a holder, and a measurement part that detects an outer periphery of the substrate to measure a center position of the substrate, thereby transferring the substrate to a target position, includes: correcting the target position based on an amount of positional deviation between a reference position of the holder and the center position of the substrate, a first amount of thermal displacement of the reference position of the holder by thermal expansion of the transfer mechanism at a measurement position where the outer periphery of the substrate is detected, and a second amount of thermal displacement of the reference position of the holder by the thermal expansion of the transfer mechanism at the target position; and controlling the transfer mechanism such that the reference position of the holder becomes the corrected target position.

公开(公告)号：US12209314B2

公开(公告)日：2025-01-28

申请号：US17754379

申请日：2020-09-23

Applicant: Tokyo Electron Limited

Inventor： Satoshi Kaneko

IPC: C23C18/16 ,  B05C5/00

Abstract: A technique enabling to heat a plating liquid rapidly while suppressing thermal deterioration of the plating liquid is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a plating liquid supply configured to supply the plating liquid on a processing surface of the substrate; and a heating element, configured to heat at least one of the plating liquid on the processing surface or the substrate, including a heater, a liquid flow path through which pure water flows, and a vapor discharge opening which is connected to the liquid flow path and through which water vapor produced as the pure water is vaporized by heat from the heater is ejected.

公开(公告)号：US20250029950A1

公开(公告)日：2025-01-23

申请号：US18778186

申请日：2024-07-19

Applicant: Tokyo Electron Limited

Inventor： Yuji MIMURA ,  Takashi UNO ,  Takahiro NODA ,  Satoshi MICHINAKA

IPC: H01L23/00

Abstract: A bonding method includes: preparing a first semiconductor substrate having a first surface and a second semiconductor substrate having a second surface; hydrophilizing the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate; bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing; and bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing. The enhancing of the bonding strength includes performing heat treatment on the first semiconductor substrate and the second semiconductor substrate in a first temperature range; and performing heat treatment on the first semiconductor substrate and the second semiconductor substrate at a target temperature after the performing of the heat treatment in the first temperature range. The first temperature range is lower than the target temperature.

公开(公告)号：US12203021B2

公开(公告)日：2025-01-21

申请号：US17654640

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US20250022724A1

公开(公告)日：2025-01-16

申请号：US18897344

申请日：2024-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masanori TAKAHASHI ,  Shota EZAKI

IPC: H01L21/67 ,  F25B21/04 ,  H01J37/32 ,  H01L21/683

Abstract: A substrate support for use in a substrate processing apparatus includes: a base having an internal space; an electronic circuit board disposed in the internal space; a substrate supporting plate disposed on the base; and at least one temperature adjusting element disposed in the internal space, the at least one temperature adjusting element being configured to adjust a temperature of the electronic circuit board.

公开(公告)号：US12198954B2

公开(公告)日：2025-01-14

申请号：US17335475

申请日：2021-06-01

Applicant: Tokyo Electron Limited

Inventor： Kippei Sugita

IPC: H01L21/67 ,  G01P15/18 ,  H01L21/66 ,  G06T7/00

Abstract: An execution device according to exemplary embodiments includes an operation device, a first acceleration sensor, a second acceleration sensor, and a control device. The operation device executes a predetermined operation. The first acceleration sensor detects acceleration in a first direction along a horizontal direction. The second acceleration sensor detects acceleration in a second direction intersecting the first direction along the horizontal direction. The control device recognizes a transport position of the execution device in the semiconductor manufacturing apparatus based on output values from the first acceleration sensor and the second acceleration sensor. When it is recognized that the execution device is transported to a predetermined position, the control device causes the operation device to execute the predetermined operation.

公开(公告)号：US12198952B2

公开(公告)日：2025-01-14

申请号：US17577152

申请日：2022-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Dogome ,  Masatomo Kita

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/677

Abstract: Embodiments of this application discloses a substrate processing apparatus comprising: a vacuum transfer module having a vacuum transfer space and an opening; a wall unit attached to the opening and including a first gate valve and a second gate valve; a substrate processing module attached to the wall unit and having a substrate processing space communicating with the vacuum transfer space via the first gate valve; and a ring stocker attached to the wall unit and having a storage space for storing at least one annular member used in a plasma processing module. Moreover, the apparatus further includes a transfer mechanism disposed in the vacuum transfer space and transfers a substrate between the vacuum transfer space and the substrate processing space through the first gate valve and also transfers at least one annular member between the vacuum transfer space and the storage space via the second gate valve.

公开(公告)号：US12198937B2

公开(公告)日：2025-01-14

申请号：US17514888

申请日：2021-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki Chino ,  Hikoichiro Sasaki

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

Abstract: An etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative DC voltage to the substrate support.

公开(公告)号：US12196700B2

公开(公告)日：2025-01-14

申请号：US18170429

申请日：2023-02-16

Applicant: Tokyo Electron Limited

Inventor： Takayuki Hatanaka

IPC: G01N27/22

Abstract: A measuring method according to an exemplary embodiment includes acquiring a temperature by a temperature sensor at a first time, and acquiring a first parameter that sets an admittance of a phase adjustment circuit. The measuring method includes acquiring a second parameter corresponding to the temperature acquired at the first time. The second parameter is generated based on a second parameter group that is pre-stored. The measuring method includes acquiring a correction parameter group by correcting a second parameter group to correspond to the first parameter based on the first parameter and the second parameter.

公开(公告)号：US20250015045A1

公开(公告)日：2025-01-09

申请号：US18751859

申请日：2024-06-24

Applicant: Tokyo Electron Limited

Inventor： H. Jim Fulford ,  Partha Mukhopadhyay ,  Mark I. Gardner

IPC: H01L23/00 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/768 ,  H01L21/78

Abstract: A method includes receiving a first device wafer comprising a plurality of dies, bonding a first side of a temporary wafer to a first side of the first device wafer to form a combined wafer, and performing a first patterning process on the combined wafer to form first trenches in the combined wafer. The first trenches fully extend through the first device wafer and partially into the temporary wafer from the first side of the temporary wafer. The first trenches separate the plurality of dies from each other. The method further includes placing the combined wafer on a support and applying a force to the combined wafer to separate the temporary wafer into individual temporary regions. Each individual temporary region is bonded to a respective individual die. The method further includes attaching individual dies to a second device wafer and removing the individual temporary regions from the individual dies.