公开(公告)号：US11441225B2

公开(公告)日：2022-09-13

申请号：US16768245

申请日：2018-11-27

Applicant: Tokyo Electron Limited

Inventor： Kazuki Motomatsu ,  Satoshi Kaneko

IPC: C23C18/16 ,  B05B13/02 ,  B05C5/00 ,  C23C18/31 ,  B05C13/00

Abstract: A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

公开(公告)号：US20220056590A1

公开(公告)日：2022-02-24

申请号：US17279748

申请日：2019-09-26

Applicant: Tokyo Electron Limited

Inventor： Satoshi Morita ,  Masami Akimoto ,  Katsuhiro Morikawa ,  Kouichi Mizunaga ,  Mitsuaki Iwashita ,  Satoshi Kaneko

IPC: C23C18/16 ,  C23C16/455 ,  H01L21/02

Abstract: A substrate processing apparatus includes a rotation driving mechanism configured to rotate a rotary table configured to hold a substrate; an electric heater provided in the rotary table to be rotated along with the rotary table and configured to heat the substrate; a power receiving electrode provided in the rotary table to be rotated along with the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode and configured to supply a power to the electric heater via the power receiving electrode; an electrode moving mechanism; a power feeder configured to supply the power to the power feeding electrode; a processing cup surrounding the rotary table; at least one processing liquid nozzle configured to supply a processing liquid; a processing liquid supply mechanism configured to supply at least an electroless plating liquid; and a controller.

公开(公告)号：US12276027B2

公开(公告)日：2025-04-15

申请号：US17598597

申请日：2020-03-24

Applicant: Tokyo Electron Limited

Inventor： Katsuhiro Morikawa ,  Masami Akimoto ,  Mitsuaki Iwashita ,  Satoshi Kaneko

IPC: C23C18/16 ,  C23C18/18 ,  H01L21/02 ,  H01L21/288 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

公开(公告)号：US20230096305A1

公开(公告)日：2023-03-30

申请号：US17908660

申请日：2021-02-17

Applicant: Tokyo Electron Limited

Inventor： Masato Hamada ,  Masami Akimoto ,  Masatoshi Shiraishi ,  Kazuyuki Goto ,  Satoshi Kaneko ,  Kazuki Motomatsu

IPC: C25D5/08 ,  C25D17/10 ,  C25D21/08

Abstract: A plating apparatus 1 includes a substrate holder 10, a first electrode, a second electrode and a voltage applying unit 30. The substrate holder 10 is configured to hold a substrate. The first electrode is electrically connected to the substrate. The second electrode is configured to scan with respect to a front surface of the substrate. The voltage applying unit 30 is configured to apply a voltage between the first electrode and the second electrode. A first discharge opening 23 configured to discharge a plating liquid L1 and a second discharge opening 24 configured to discharge a cleaning liquid L2 are formed in a bottom surface 22a of the second electrode.

公开(公告)号：US20180002811A1

公开(公告)日：2018-01-04

申请号：US15633910

申请日：2017-06-27

Applicant: Tokyo Electron Limited

Inventor： Kazuki Motomatsu ,  Satoshi Kaneko ,  Kazunori Sakamoto

IPC: C23C18/16 ,  C23C18/18

CPC classification number: C23C18/163 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1676 ,  C23C18/1682 ,  C23C18/18 ,  C23C18/32 ,  C23C18/38 ,  C23C18/42

Abstract: A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61,and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.

公开(公告)号：US20210172066A1

公开(公告)日：2021-06-10

申请号：US16768245

申请日：2018-11-27

Applicant: Tokyo Electron Limited

Inventor： Kazuki Motomatsu ,  Satoshi Kaneko

IPC: C23C18/16 ,  C23C18/31

Abstract: A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

公开(公告)号：US10689762B2

公开(公告)日：2020-06-23

申请号：US15635388

申请日：2017-06-28

Applicant: Tokyo Electron Limited

Inventor： Akira Murata ,  Satoshi Kaneko ,  Kazuki Motomatsu ,  Kazunori Sakamoto

IPC: C23C18/16 ,  H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  C23C18/18

Abstract: A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

公开(公告)号：US09564347B2

公开(公告)日：2017-02-07

申请号：US14065784

申请日：2013-10-29

Applicant: Tokyo Electron Limited

Inventor： Yoshifumi Amano ,  Satoshi Kaneko

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: A liquid processing apparatus including: a second housing; a first housing capable of being brought into contact with the second housing; a holding part configured to hold an object to be processed; a rotation driving part configured to rotate the object to be processed held by the holding part; front-side process-liquid supply nozzle configured to supply a process liquid onto a peripheral portion of a front surface of the object to be processed held by the holding part; and a storage part disposed on a side of a rear surface of the object to be processed held by the holding part, the storage part being configured to store the process liquid having been passed through the object to be processed. The respective first housing and the second housing can be moved in one direction, so that the first housing and the second housing can be brought into contact and separated from each other.

Abstract translation: 一种液体处理装置，包括：第二壳体; 能够与第二壳体接触的第一壳体; 被配置为保持待处理对象的保持部; 旋转驱动部，其构造成使由所述保持部保持的被处理体旋转; 前处理液供给喷嘴，被配置为将处理液体供给到由所述保持部保持的待处理对象物的前表面的周边部; 以及存储部，其设置在由所述保持部保持的被处理体的背面的一侧，所述收纳部被配置为存储已经通过所述被处理物的处理液。 相应的第一壳体和第二壳体可以在一个方向上移动，使得第一壳体和第二壳体可以彼此接触和分离。

公开(公告)号：US20150165471A1

公开(公告)日：2015-06-18

申请号：US14570266

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC: B05C11/10 ,  B05C3/00 ,  B05C3/02

CPC classification number: B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

Abstract: A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

Abstract translation: 基板处理装置包括：一个或多个基板处理单元11至18，每个基板处理单元用处理流体处理基板3; 将加热的处理流体供给到基板处理单元11至18的处理流体供应单元19和20; 以及控制处理流体供给单元19和20的控制器21.处理流体供应单元19和20包括存储处理流体的储存箱35; 加热热交换器51，加热处理流体; 以及将处理流体供给到基板处理单元11〜18的供给路径52.供给路径52包括在基板处理单元11〜18的上游旁通加热用热交换器51的旁路路径71.加热流体被加热 加热热交换器51和从旁路通路71供给的处理液被混合供给。

公开(公告)号：US12209314B2

公开(公告)日：2025-01-28

申请号：US17754379

申请日：2020-09-23

Applicant: Tokyo Electron Limited

Inventor： Satoshi Kaneko

IPC: C23C18/16 ,  B05C5/00

Abstract: A technique enabling to heat a plating liquid rapidly while suppressing thermal deterioration of the plating liquid is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a plating liquid supply configured to supply the plating liquid on a processing surface of the substrate; and a heating element, configured to heat at least one of the plating liquid on the processing surface or the substrate, including a heater, a liquid flow path through which pure water flows, and a vapor discharge opening which is connected to the liquid flow path and through which water vapor produced as the pure water is vaporized by heat from the heater is ejected.