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公开(公告)号：US20220347711A1
公开(公告)日：2022-11-03
申请号：US17661124
申请日：2022-04-28
Applicant: Tokyo Electron Limited
Inventor： Tetsuya Sakazaki , Katsuhiro Morikawa
Abstract: A substrate processing apparatus includes a substrate holder, a processing liquid supply and a cover unit. The substrate holder holds a substrate horizontally and rotate the substrate. The processing liquid supply supplies a processing liquid toward a first surface of the substrate held by the substrate holder. The cover unit faces a second surface of the substrate, the second surface being opposite to the first surface. The cover unit includes a heater configured to heat the substrate. The cover unit is provided with an opening at a position corresponding to a central portion of the substrate and multiple gas supply openings, at an outer peripheral side than the opening, through which a gas is supplied toward the second surface of the substrate. The gas is heated by the heater. A supply amount of at least some of the gas is adjusted based on a rotation speed of the substrate.
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公开(公告)号：US11545367B2
公开(公告)日：2023-01-03
申请号：US17154049
申请日：2021-01-21
Applicant: Tokyo Electron Limited
Inventor： Tetsuya Sakazaki , Hitoshi Kosugi
IPC: H01L21/67 , H01L21/3213
Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.
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公开(公告)号：US20250124621A1
公开(公告)日：2025-04-17
申请号：US18909227
申请日：2024-10-08
Applicant: Tokyo Electron Limited
Inventor： Masahide Tadokoro , Tetsuya Sakazaki
Abstract: A display method includes acquiring, based on an image obtained by imaging a peripheral region of a front surface of a substrate having a film formed on the front surface thereof, edge information indicating a relationship between a circumferential position and an edge position of the film in a radial direction of the substrate for each of multiple circumferential positions around a center of the substrate; displaying, on a monitor, a graph indicating the edge position for each of the multiple circumferential positions based on the edge information; and determining, before displaying the graph on the monitor, a display range for the edge position on the graph based on statistical information of the edge position included in the edge information.
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公开(公告)号：US20220254646A1
公开(公告)日：2022-08-11
申请号：US17580936
申请日：2022-01-21
Applicant: Tokyo Electron Limited
Inventor： Jacques Faguet , Tetsuya Sakazaki , Paul Abel
IPC: H01L21/311 , H01L21/67
Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.
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Patent Agency Ranking
公开(公告)号：US11306249B2
公开(公告)日：2022-04-19
申请号：US16965776
申请日：2019-01-23
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Tetsuya Sakazaki , Koji Kagawa , Kenji Sekiguchi , Kazuyoshi Mizumoto
IPC: H01L21/3213 , H01L21/311 , C09K13/08 , H01L21/67 , H01L21/687
Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.
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公开(公告)号：US12203021B2
公开(公告)日：2025-01-21
申请号：US17654640
申请日：2022-03-14
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Tetsuya Sakazaki , Koji Kagawa , Kenji Sekiguchi , Kazuyoshi Mizumoto
IPC: H01L21/311 , C09K13/08 , H01L21/3213 , H01L21/67 , H01L21/687
Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.
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公开(公告)号：US11915941B2
公开(公告)日：2024-02-27
申请号：US17580936
申请日：2022-01-21
Applicant: Tokyo Electron Limited
Inventor： Jacques Faguet , Tetsuya Sakazaki , Paul Abel
IPC: H01L21/311 , H01L21/67
CPC classification number: H01L21/31116 , H01L21/67075
Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.
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公开(公告)号：US20220213382A1
公开(公告)日：2022-07-07
申请号：US17654640
申请日：2022-03-14
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Tetsuya Sakazaki , Koji Kagawa , Kenji Sekiguchi , Kazuyoshi Mizumoto
IPC: C09K13/08 , H01L21/311 , H01L21/3213 , H01L21/67 , H01L21/687
Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.
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公开(公告)号：US20210032537A1
公开(公告)日：2021-02-04
申请号：US16965776
申请日：2019-01-23
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Tetsuya Sakazaki , Koji Kagawa , Kenji Sekiguchi , Kazuyoshi Mizumoto
IPC: C09K13/08 , H01L21/67 , H01L21/687 , H01L21/311 , H01L21/3213
Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.
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