公开(公告)号：US09415356B1

公开(公告)日：2016-08-16

申请号：US15130282

申请日：2016-04-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi Tanaka ,  Koukichi Hiroshiro ,  Fumihiro Kamimura

IPC: B01F3/08 ,  B01F5/10 ,  B01F15/00 ,  B01F15/06 ,  B01J19/24 ,  C01B15/08

CPC classification number: B01F3/088 ,  B01F3/0861 ,  B01F3/0865 ,  B01F5/10 ,  B01F15/00253 ,  B01F15/00331 ,  B01F15/00396 ,  B01F15/0243 ,  B01F15/0412 ,  B01F15/0437 ,  B01F15/06 ,  B01F2015/062 ,  B01F2215/0036 ,  B01J19/24 ,  B01J2219/00103 ,  B01J2219/24 ,  C01B15/08 ,  C11D3/3947 ,  C11D11/0047 ,  H01L21/67057

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxomonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

公开(公告)号：US11723259B2

公开(公告)日：2023-08-08

申请号：US17336657

申请日：2021-06-02

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Jun Nonaka ,  Kazuya Koyama ,  Mitsunori Nakamori

IPC: H10K71/15 ,  H10K77/10 ,  H10K85/10

CPC classification number: H10K71/15 ,  H10K77/10 ,  H10K85/10

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

公开(公告)号：US11049723B2

公开(公告)日：2021-06-29

申请号：US16736964

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Rintaro Higuchi ,  Koji Kagawa ,  Kenji Sekiguchi

IPC: H01L21/306 ,  H01L21/67 ,  B82Y40/00 ,  C23C16/04 ,  G03F7/16 ,  H01L21/302 ,  B82Y30/00 ,  H01L21/02 ,  H01L21/321

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

公开(公告)号：US09339775B2

公开(公告)日：2016-05-17

申请号：US14750319

申请日：2015-06-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi Tanaka ,  Koukichi Hiroshiro ,  Fumihiro Kamimura

IPC: B01F5/10 ,  B01F3/08 ,  B01F15/00 ,  B01F15/04 ,  C01B15/08 ,  C11D3/39 ,  C11D11/00 ,  H01L21/67 ,  B01F15/02 ,  B01F15/06

CPC classification number: B01F3/088 ,  B01F3/0861 ,  B01F3/0865 ,  B01F5/10 ,  B01F15/00253 ,  B01F15/00331 ,  B01F15/00396 ,  B01F15/0243 ,  B01F15/0412 ,  B01F15/0437 ,  B01F15/06 ,  B01F2015/062 ,  B01F2215/0036 ,  B01J19/24 ,  B01J2219/00103 ,  B01J2219/24 ,  C01B15/08 ,  C11D3/3947 ,  C11D11/0047 ,  H01L21/67057

Abstract: The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxornonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank 10 is filled up with a sulfuric acid and the sulfuric acid overflowing from the inner tank 10 is allowed to flow into an outer tank 12. Then, a hydrogen peroxide solution is supplied into the inner tank 10 and the hydrogen peroxide solution is allowed to flow into the outer tank 12 whereby the two kinds of liquids of the hydrogen peroxide solution and the sulfuric acid are stored in the outer tank 12. Simultaneously when the hydrogen peroxide solution flows into the outer tank 12, a return pump 16 is activated.

Abstract translation: 本发明提供了当硫酸和过氧化氢溶液彼此混合时，能够充分产生有效地从基材中除去抗蚀剂的化学 - 液体混合方法和药物 - 液体混合装置。 首先，用硫酸填充内箱10，使从内箱10溢出的硫酸流入外箱12.然后，将过氧化氢溶液供给至内箱10，将氢 使过氧化物溶液流入外槽12，由此将过氧化氢溶液和硫酸的两种液体储存在外罐12中。同时当过氧化氢溶液流入外罐12时，返回泵 16被激活。

公开(公告)号：US12203021B2

公开(公告)日：2025-01-21

申请号：US17654640

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US20220213382A1

公开(公告)日：2022-07-07

申请号：US17654640

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: C09K13/08 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US20210032537A1

公开(公告)日：2021-02-04

申请号：US16965776

申请日：2019-01-23

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: C09K13/08 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311 ,  H01L21/3213

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US11306249B2

公开(公告)日：2022-04-19

申请号：US16965776

申请日：2019-01-23

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: H01L21/3213 ,  H01L21/311 ,  C09K13/08 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US20230386855A1

公开(公告)日：2023-11-30

申请号：US18248900

申请日：2021-10-06

Applicant: Tokyo Electron Limited

Inventor： Koji Kagawa ,  Koukichi Hiroshiro

IPC: H01L21/32 ,  H01L21/306 ,  H01L21/311 ,  H01L21/033 ,  H01L21/67

CPC classification number: H01L21/32 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/0332 ,  H01L21/6715 ,  H01L21/6708

Abstract: A substrate processing method includes (A) to (C) described below. (A) A substrate having a surface in which a SiO film and a Low-k film or a SiN film are exposed is preprared. The Low-k film or the SiN film is exposed to oxygen plasma. (B) A protective film is formed on the Low-k film or the SiN film by supplying an organic compound (self-assembled monolayer (SAM) material) configured to form a SAM to the surface of the substrate. (C) The SiO film is etched by supplying hydrofluoric acid to the surface of the substrate while inhibiting etching of the Low-k film or the SiN film caused by the hydrofluoric acid with the protective film.

公开(公告)号：US20200219730A1

公开(公告)日：2020-07-09

申请号：US16736964

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Rintaro Higuchi ,  Koji Kagawa ,  Kenji Sekiguchi

IPC: H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.