公开(公告)号：US20190177843A1

公开(公告)日：2019-06-13

申请号：US16269456

申请日：2019-02-06

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L45/00 ,  C23C16/30 ,  H01L21/02 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US10319588B2

公开(公告)日：2019-06-11

申请号：US15729485

申请日：2017-10-10

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  C23C16/455 ,  C23C16/56 ,  C23C16/30

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US20190109002A1

公开(公告)日：2019-04-11

申请号：US15729485

申请日：2017-10-10

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  C23C16/30 ,  H01L29/24 ,  H01L29/786

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US10145009B2

公开(公告)日：2018-12-04

申请号：US15417001

申请日：2017-01-26

Applicant: ASM IP Holding B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/06 ,  C23C16/14 ,  C23C16/455

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：US20180127873A1

公开(公告)日：2018-05-10

申请号：US15569707

申请日：2016-05-24

Applicant: ASM IP Holding B.V.

Inventor： Tiina Sarnet ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/30 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20140106070A1

公开(公告)日：2014-04-17

申请号：US13802382

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract translation: 一种用于在反应室中的基底上形成薄膜的气相沉积工艺，其中所述方法包括使基底与氟化物前体接触。 该方法导致形成氟化锂薄膜。

公开(公告)号：US12104250B2

公开(公告)日：2024-10-01

申请号：US17822576

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/45527

Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

公开(公告)号：US20230307247A1

公开(公告)日：2023-09-28

申请号：US18319330

申请日：2023-05-17

Applicant: ASM IP HOLDING B.V.

Inventor： Mikko Ritala ,  Chao Zhang ,  Markku Leskelä

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/033 ,  H01L21/3105

CPC classification number: H01L21/31138 ,  H01L21/30604 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31127

Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.

公开(公告)号：US11624112B2

公开(公告)日：2023-04-11

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  C01G39/06 ,  G01N30/72

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20230064120A1

公开(公告)日：2023-03-02

申请号：US17822576

申请日：2022-08-26

Applicant: ASM IP Holding, B.V

Inventor： Timo Hatanpää ,  Anton Viheraara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08

Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.