Seamless copper alloy tube for heat exchanger being excellent in 0.2% proof stress and fatigue strength
    71.
    发明授权
    Seamless copper alloy tube for heat exchanger being excellent in 0.2% proof stress and fatigue strength 有权
    用于换热器的无缝铜合金管具有优异的0.2%抗弯强度和疲劳强度

    公开(公告)号:US06280541B1

    公开(公告)日:2001-08-28

    申请号:US09485621

    申请日:2000-04-04

    IPC分类号: C22C906

    CPC分类号: C22C9/06

    摘要: A seamless pipe made of copper alloy consisting of, by weight % , a total amount of 0.02 to 0.2% of Co, 0.01 to 0.05% of P, 1 to 20 ppm of C if needed, and remainder Cu, and unavoidable impurities and, as said impurities, the total oxygen content is regulated to 50 ppm or less, and useful for a heat transfer pipe of a heat exchanger and especially, when HFC-type fluorocarbon is used as a heating medium.

    摘要翻译: 由铜合金制成的无缝管,按重量%计,总量为0.02〜0.2%的Co,0.01〜0.05%的P,1〜20ppm的C,如果需要,余量为Cu,以及不可避免的杂质, 作为所述杂质,将总氧含量调节至50ppm以下,对于热交换器的传热管,特别是在使用HFC型氟碳化合物作为加热介质时可以使用。

    Antenna device and radio receiver using the same
    72.
    发明授权
    Antenna device and radio receiver using the same 失效
    天线设备和使用它的无线电接收机

    公开(公告)号:US06154177A

    公开(公告)日:2000-11-28

    申请号:US146895

    申请日:1998-09-03

    摘要: In antenna device which is to be used in a portable radio receiver, plural loop antennas 1 and 3 which are formed along different faces of a case 9 of the radio receiver, respectively, and switching means 5 for selecting one of received signals from the plural loop antennas are disposed. Reception is performed while selecting a loop antenna having a higher received signal level. When an antenna having the directivity or the plane of polarization which are more advantageous is selected, it is possible to ensure high reception performance.

    摘要翻译: 在便携式无线电接收机中使用的天线装置中,分别沿着无线电接收机的壳体9的不同面形成的多个环形天线1和3以及用于从多个接收机中选择接收信号之一的切换装置5 环形天线被布置。 在选择具有较高接收信号电平的环形天线的同时执行接收。 当选择具有更有利的方向性或极化平面的天线时,可以确保高的接收性能。

    Scannable antenna matrix having an amplifying element for each antenna
element
    74.
    发明授权
    Scannable antenna matrix having an amplifying element for each antenna element 失效
    可扫描天线阵列具有用于每个天线元件的放大元件

    公开(公告)号:US5932999A

    公开(公告)日:1999-08-03

    申请号:US152800

    申请日:1998-09-14

    申请人: Yutaka Saito

    发明人: Yutaka Saito

    IPC分类号: G01R29/08 G01R21/04 G01R31/02

    CPC分类号: G01R29/0814 G01R29/0878

    摘要: An EM radiation measuring apparatus. An antenna element matrix (20) on a substrate includes 1st to Lth arrays (4) which are successively arranged in an X direction. Each of the 1st to Lth arrays includes antenna elements arranged in Y direction and having a column output terminal (7), each antenna element receiving an EM radiation from a target and generating a detection signal. A signal selector (5, 3, 2, 7) responsive to X and Y selection signals selectively amplifies and supplies the detection signal from one of antenna elements to one of the column output terminals. 1st to Nth signal outputting circuits selectively couple the column output terminals to provide a single output detection signal. The inputs of the 1st signal outputting circuits are connected to the column output terminals respectively, and each of the 1st to Nth outputting circuits has a transmission line(s) substantially extending in the X direction to connect its output terminals to an input of the next outputting circuit.

    摘要翻译: EM辐射测量仪器。 衬底上的天线元件矩阵(20)包括在X方向上连续布置的第1至第L阵列(4)。 第一至第L阵列中的每一个包括沿Y方向布置并具有列输出端子(7)的天线元件,每个天线元件从目标接收EM辐射并产生检测信号。 响应于X和Y选择信号的信号选择器(5,3,2,7)选择性地放大并将检测信号从天线元件之一提供给列输出端中的一个。 第一至第N信号输出电路选择性地耦合列输出端以提供单输出检测信号。 第一信号输出电路的输入分别连接到列输出端,第一至第N输出电路中的每一个具有在X方向上基本上延伸的传输线,以将其输出端连接到下一个输入端 输出电路。

    Semiconductor device having a semiconductor film of low oxygen
concentration
    75.
    发明授权
    Semiconductor device having a semiconductor film of low oxygen concentration 失效
    具有低氧浓度的半导体膜的半导体器件

    公开(公告)号:US5923071A

    公开(公告)日:1999-07-13

    申请号:US127822

    申请日:1993-09-27

    申请人: Yutaka Saito

    发明人: Yutaka Saito

    摘要: A semiconductor substrate having a silicon-on-insulator structure may achieve superior performance by utilizing a low oxygen content monocrystalline silicon thin film layer for device formation. A supporting substrate, which may comprise a transparent material, such as quartz, or which may be silicon, has an insulating film disposed thereover. The insulating film preferably has a lower diffusion coefficient with respect to impurities than the monocrystalline silicon thin film, which is provided thereover. In accordance with this structure, oxygen particles are not introduced into the monocrystalline thin film and the thin film has a low oxygen concentration to maximize the minority carrier lifetime, enhance device performance characteristics, and prevent the occurrence of latch up.

    摘要翻译: 具有绝缘体上硅结构的半导体衬底可以通过利用用于器件形成的低含氧量单晶硅薄膜层来实现优异的性能。 可以包括透明材料(例如石英)或可以是硅的支撑衬底具有设置在其上的绝缘膜。 相对于在其上设置的单晶硅薄膜,绝缘膜优选相对于杂质具有较低的扩散系数。 根据这种结构,氧化物颗粒不被引入到单晶薄膜中,并且薄膜具有低氧浓度以使少数载流子寿命最大化,增强器件的性能特性,并防止产生闭锁。

    Real-time semiconductor radiation detector
    76.
    发明授权
    Real-time semiconductor radiation detector 失效
    实时半导体辐射探测器

    公开(公告)号:US5757040A

    公开(公告)日:1998-05-26

    申请号:US667453

    申请日:1996-06-21

    摘要: Semiconductor radial rays detector is provided that improves a breakdown voltage yield of a gate insulating film of a semiconductor radial rays detector and prevents an increase in resistance of a gate electrode caused by the improvement in the breakdown voltage yield. In the inventive semiconductor radial rays detector, material used as a gate electrode 1 of a reading condenser is not an Al film (aluminum film) but a POLY Si film (a polycrystalline silicon film), or silicide or metal including silicide with a high melting point such as WSi (tungsten silicide) (strictly its composition is indefinite as expressed as W.sub.x Si.sub.y) or TiSi (titan silicide) (expressed as Ti.sub.x Si, in the same manner). Further, a contact hole 2 is provided on the gate electrode 1 through an inter-insulating film 4 as the inter-insulating film for wiring, and an Al electrode 3 coupled to an output terminal is provided over the contact

    摘要翻译: 提供半导体径向射线检测器,其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生,并且防止由于击穿电压产量的提高而引起的栅电极的电阻增加。 在本发明的半导体径向射线检测器中,用作读取冷凝器的栅电极1的材料不是Al膜(铝膜),而是POLY Si膜(多晶硅膜),或者包含高熔点的硅化物的硅化物或金属 (硅化钨)(严格地说,其组成如WxSiy所表示的不定)或TiSi(钛硅化物)(以相同的方式表示为TixSi)。 此外,通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2,并且在触点上设置耦合到输出端子的Al电极3

    Photoelectric conversion semiconductor device with insulation film
    77.
    发明授权
    Photoelectric conversion semiconductor device with insulation film 失效
    具有绝缘膜的光电转换半导体器件

    公开(公告)号:US5719414A

    公开(公告)日:1998-02-17

    申请号:US213952

    申请日:1994-03-16

    摘要: A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.

    摘要翻译: 光电转换半导体器件的特征在于,在第一导电型半导体衬底中形成第二导电类型杂质区,第二导电类型杂质区的深度为0.1μm或更小,峰密度为1×1019原子/ cm3或 更多。 制造光电转换半导体器件的方法的特征在于将作为杂质的半导体衬底中的剂量为1×10 16至5×10 16原子/ cm 2的硼或氟化硼离子注入的步骤。