公开(公告)号：US09239502B2

公开(公告)日：2016-01-19

申请号：US13541757

申请日：2012-07-04

申请人： Te-Chun Huang ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

发明人： Te-Chun Huang ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/1333 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/136

CPC分类号： H01L27/127 ,  G02F1/133345 ,  G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134318 ,  G02F2001/13606 ,  G02F2001/136218 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.

摘要翻译： 提供像素结构及其制造方法。 像素结构包括基板，扫描线，数据线，第一绝缘层，有源器件，第二绝缘层，公共电极和第一像素电极。 与扫描线交叉的数据线设置在基板上，并且包括线性透射部分和交叉线传输部分。 覆盖扫描线的第一绝缘层和线性透射部分设置在扫描线和交叉线传输部分之间。 包括栅极，氧化物通道，源极和漏极的有源器件连接到扫描线和数据线。 第二绝缘层设置在氧化物通道和线性透射部分上。 公共电极设置在线状发送部的上方。 第一像素电极连接到漏极。

公开(公告)号：US08420463B2

公开(公告)日：2013-04-16

申请号：US13163774

申请日：2011-06-20

申请人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Chin-Yueh Liao

发明人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Chin-Yueh Liao

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L27/118 ,  H01L23/52

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/1288

摘要： A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.

摘要翻译： 像素结构包括扫描线，数据线，有源元件，第一钝化层，第二钝化层和像素电极。 数据线包括第一数据金属段和第二数据金属层。 有源元件包括栅电极，绝缘层，沟道层，源极和漏极。 沟道层位于栅电极上方的绝缘层上。 源极和漏极位于沟道层上。 源耦合到数据线。 第一钝化层和第二钝化层覆盖有源元件并形成第一接触孔以暴露漏极的一部分。 第二钝化层覆盖漏极的一部分边缘。 像素电极跨越第二钝化层设置并且经由第一接触孔耦合到漏极。

公开(公告)号：US08405787B2

公开(公告)日：2013-03-26

申请号：US12405247

申请日：2009-03-17

申请人： Sheng-Chao Liu ,  Hsiang-Lin Lin ,  Kuang-Hsiang Liu ,  Ching-Huan Lin ,  Ming-Tien Lin

发明人： Sheng-Chao Liu ,  Hsiang-Lin Lin ,  Kuang-Hsiang Liu ,  Ching-Huan Lin ,  Ming-Tien Lin

IPC分类号： G02F1/1343

CPC分类号： H01L27/1255 ,  G02F1/136286 ,  H01L27/1214

摘要： A tri-gate pixel structure includes three sub-pixel regions, three gate lines, a data line, three thin film transistors (TFTs), three pixel electrodes, and a common line. The gate lines are disposed along a first direction, and the data line is disposed along a second direction. The TFTs are disposed in the sub-pixel regions respectively, wherein each TFT has a gate electrode electrically connected to a corresponding gate line, a source electrode electrically connected to the data line, and a drain electrode. The three pixel electrodes are disposed in the three sub-pixel regions respectively, and each pixel electrode is electrically connected to the drain electrode of one TFT respectively. The common line crosses the gate lines and partially overlaps the three gate lines, and the common line and the three pixel electrodes are partially overlapped to respectively form three storage capacitors.

摘要翻译： 三栅极像素结构包括三个子像素区域，三个栅极线，数据线，三个薄膜晶体管（TFT），三个像素电极和公共线。 栅极线沿着第一方向设置，并且数据线沿着第二方向设置。 TFT分别设置在子像素区域中，其中每个TFT具有电连接到相应的栅极线的栅电极，与数据线电连接的源电极和漏电极。 三个像素电极分别设置在三个子像素区域中，并且每个像素电极分别电连接到一个TFT的漏电极。 公共线与栅极线交叉并且部分地重叠三条栅极线，并且公共线和三个像素电极部分地重叠以分别形成三个存储电容器。

公开(公告)号：US20120218489A1

公开(公告)日：2012-08-30

申请号：US13466195

申请日：2012-05-08

申请人： Liu-Chung Lee ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

发明人： Liu-Chung Lee ,  Hsiang-Lin Lin ,  Kuo-Yu Huang

IPC分类号： G02F1/136

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F2001/136218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A liquid crystal display unit structure and the manufacturing method thereof are provided. The liquid crystal display unit structure comprises a patterned first metal layer with a first data line segment and a gate line on a substrate; a patterned dielectric layer covering the first data line and the gate line having a plurality of first openings and a second opening therein, a patterned etch stop layer having a first portion located above the first data line segment and a second portion; a patterned second metal layer including a common electrode line, a second data line segment, a source electrode and a drain electrode, wherein the first portion of the patterned etch stop layer is between the first data line segment and the common line; a patterned passivation layer and a patterned transparent conductive layer.

摘要翻译： 提供了一种液晶显示单元结构及其制造方法。 液晶显示单元结构包括在基板上具有第一数据线段和栅极线的图案化第一金属层; 覆盖第一数据线的图案化介电层和具有多个第一开口和第二开口的栅极线，具有位于第一数据线段上方的第一部分的图案化蚀刻停止层和第二部分; 图案化的第二金属层，包括公共电极线，第二数据线段，源电极和漏电极，其中图案化蚀刻停止层的第一部分在第一数据线段和公共线之间; 图案化钝化层和图案化的透明导电层。

公开(公告)号：US08071407B2

公开(公告)日：2011-12-06

申请号：US12835874

申请日：2010-07-14

申请人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

发明人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

IPC分类号： H01L21/28

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate.

摘要翻译： 提供一种有源器件阵列衬底及其制造方法。 根据本发明，诸如薄膜晶体管，栅极线，栅极焊盘，数据线，数据焊盘和存储电极之类的阵列基板的元件通过形成图案化的第一金属层，绝缘层，图案化 半导体层和图案化金属多层。 此外，本发明使用选择性蚀刻某些层的方法。 使用上述方法，本发明的阵列基板具有一些具有欠切割结构的层，因此可以减少与制造阵列基板有关的耗时且复杂的掩模蚀刻工艺的数量。 本发明提供了用于制造阵列基板的相对简单且省时的方法。

公开(公告)号：US20110292327A1

公开(公告)日：2011-12-01

申请号：US13136511

申请日：2011-08-02

申请人： Hsiang-Lin Lin ,  Chun-Chieh Tsao

发明人： Hsiang-Lin Lin ,  Chun-Chieh Tsao

IPC分类号： G02F1/1335

CPC分类号： G03F7/40 ,  G02F1/133504 ,  G02F1/133555 ,  G02F2201/123 ,  G03F7/0007 ,  H01R13/6675 ,  H02J7/0068 ,  Y10T307/625 ,  Y10T428/1068

摘要： A method for producing a light reflecting structure in a transflective or reflective liquid crystal display uses one or two masks for masking a photoresist layer in a back-side exposing process. The pattern on the masks is designed to produce rod-like structures or crevices and holes on exposed and developed photoresist layer. After the exposed photoresist is developed, a heat treatment process or a UV curing process is used to soften the photoresist layer so that the reshaped surface is more or less contiguous but uneven. A reflective coating is then deposited on the uneven surface. One or more intermediate layers can be made between the masks, between the lower mask and the substrate, and between the upper masks and the photoresist layers. The masks and the intermediate layers can be made in conjunction with the fabrication of the liquid crystal display panel.

摘要翻译： 在半反射或反射型液晶显示器中制造光反射结构的方法使用一个或两个掩模来掩模背面曝光工艺中的光致抗蚀剂层。 掩模上的图案被设计成在曝光和显影的光致抗蚀剂层上产生棒状结构或缝隙和孔。 曝光的光致抗蚀剂显影后，使用热处理工艺或UV固化工艺来软化光致抗蚀剂层，使得整形表面或多或少地连续但不均匀。 然后将反射涂层沉积在不平坦表面上。 可以在掩模之间，下掩模和基板之间以及上掩模和光致抗蚀剂层之间形成一个或多个中间层。 掩模和中间层可以与液晶显示面板的制造相结合。

公开(公告)号：US20110244615A1

公开(公告)日：2011-10-06

申请号：US13163774

申请日：2011-06-20

申请人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Chin-Yueh Liao

发明人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Chin-Yueh Liao

IPC分类号： H01L21/70

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/1288

摘要： A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.

摘要翻译： 像素结构包括扫描线，数据线，有源元件，第一钝化层，第二钝化层和像素电极。 数据线包括第一数据金属段和第二数据金属层。 有源元件包括栅电极，绝缘层，沟道层，源极和漏极。 沟道层位于栅电极上方的绝缘层上。 源极和漏极位于沟道层上。 源耦合到数据线。 第一钝化层和第二钝化层覆盖有源元件并形成第一接触孔以暴露漏极的一部分。 第二钝化层覆盖漏极的一部分边缘。 像素电极跨越第二钝化层设置并且经由第一接触孔耦合到漏极。

公开(公告)号：US08018013B2

公开(公告)日：2011-09-13

申请号：US11740937

申请日：2007-04-27

申请人： Hsiang-Lin Lin ,  Ching-Yu Tsai ,  Yi-Sheng Cheng ,  Kuo-Yu Huang

发明人： Hsiang-Lin Lin ,  Ching-Yu Tsai ,  Yi-Sheng Cheng ,  Kuo-Yu Huang

IPC分类号： H01L29/72

CPC分类号： H01L27/1288 ,  G09G3/3648 ,  G09G2300/0465 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/0657 ,  H01L29/41733 ,  H01L29/42384

摘要： A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

摘要翻译： 在基板上设置包括扫描线，数据线，有源器件，屏蔽电极和像素电极的像素结构。 数据线包括上导线和底导线。 上导线设置在扫描线上方并穿过扫描线。 底部导线与上导电线电连接。 有源器件电连接到扫描线和上导电线。 屏蔽电极设置在底部导线上。 设置在屏蔽电极上方的像素电极与有源器件电连接。 此外，像素电极的一部分和屏蔽电极的一部分形成存储电容器。

公开(公告)号：US07834354B2

公开(公告)日：2010-11-16

申请号：US12040281

申请日：2008-02-29

申请人： Hsiang-Lin Lin ,  Ching-Huan Lin

发明人： Hsiang-Lin Lin ,  Ching-Huan Lin

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  G02F1/134363 ,  G02F2001/134372 ,  H01L27/1214 ,  H01L27/124

摘要： A pixel structure of a fringe field switching liquid crystal display (FFS-LCD) and a method for manufacturing the pixel structure are provided. Compared to the conventional method of using seven photolithography-etching processes for manufacturing a pixel structure, the method of the present invention uses only six photolithography-etching processes that save manufacturing costs and time. Furthermore, the pixel structure thereby only comprises two insulating layers, and thus, the light transmittance thereof can be increased in comparison to the conventional pixel structure comprising three insulating layers.

摘要翻译： 提供了一种边缘场切换液晶显示器（FFS-LCD）的像素结构以及像素结构的制造方法。 与使用七个光刻蚀刻工艺用于制造像素结构的常规方法相比，本发明的方法仅使用六个光刻蚀刻工艺，其节省制造成本和时间。 此外，像素结构由此仅包括两个绝缘层，因此与包括三个绝缘层的常规像素结构相比，其透光率可以增加。

公开(公告)号：US20100279450A1

公开(公告)日：2010-11-04

申请号：US12835874

申请日：2010-07-14

申请人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

发明人： Kuo-Lung Fang ,  Hsiang-Lin Lin ,  Han-Tu Lin

IPC分类号： H01L21/28

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate.

摘要翻译： 提供一种有源器件阵列衬底及其制造方法。 根据本发明，诸如薄膜晶体管，栅极线，栅极焊盘，数据线，数据焊盘和存储电极之类的阵列基板的元件通过形成图案化的第一金属层，绝缘层，图案化 半导体层和图案化金属多层。 此外，本发明使用选择性蚀刻某些层的方法。 使用上述方法，本发明的阵列基板具有一些具有欠切割结构的层，因此可以减少在阵列基板的制造中涉及的耗时且复杂的掩模蚀刻工艺的数量。 本发明提供了用于制造阵列基板的相对简单且省时的方法。