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137 条记录 (耗时 0.033 秒)

    Double plate-up process for fabrication of composite magnetoresistive shared poles
    72.
    发明授权
    Double plate-up process for fabrication of composite magnetoresistive shared poles 失效
    用于制造复合磁阻共享极的双层平板工艺

    公开(公告)号：US06524491B1

    公开(公告)日：2003-02-25

    申请号：US09298935

    申请日：1999-04-26

    申请人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

    发明人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

    IPC分类号： G11B5127

    CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032

    摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.

    摘要翻译： 制造磁记录头的方法包括以下步骤。 在基板上形成低磁矩，第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。 在种子层上形成PLM第二屏蔽层，并平整屏蔽层。 在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。 在非磁性间隔层上形成第一个HMM，下极层。 覆盖第一个HMM，具有写间隙层的下极层。 在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。 写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。 然后在写入头部掩模之外的写间隙层上形成HMM，上极层。 在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

    Method to make a stitched writer for a giant magneto-resistive head
    73.
    发明授权
    Method to make a stitched writer for a giant magneto-resistive head 失效
    为巨型磁阻头制作缝合笔记的方法

    公开(公告)号：US06469874B1

    公开(公告)日：2002-10-22

    申请号：US09523993

    申请日：2000-03-13

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49046

    摘要： A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

    摘要翻译： 包含非磁性间隔层的高数据速率缝合磁极感应磁性写入头和从磁极尖端凹入的磁极轭。 所述间隔层沉积为自对准的图案化光刻胶工艺的一部分，其中首先沉积间隔层，然后将上极组件的P2部分电镀在其上以形成极尖构型。 增加间隔层的厚度，同时将其保持在规定的公差范围内，允许极片的上缝合P3部分相对于P2的尖端凹入。 间隔层缩短喉部高度，降低饱和写入电流，并提高覆盖和侧面擦除性能。

    Narrow track stitched GMR head
    74.
    发明授权
    Narrow track stitched GMR head 失效
    窄轨缝合GMR头

    公开(公告)号：US06416677B1

    公开(公告)日：2002-07-09

    申请号：US09585785

    申请日：2000-06-05

    申请人： Hsiang-Yi Wei ,  Yi-Ting Yao ,  Eiki Narumi ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Hsiang-Yi Wei ,  Yi-Ting Yao ,  Eiki Narumi ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： B44C122

    CPC分类号： G11B5/37

    摘要： As the read capabilities of magnetic disk systems improve due to advanced GMR heads, it becomes necessary to correspondingly reduce the area of recorded data. This requires a narrowing of the stitched sub-pole at the write gap. This has proved difficult for pole widths less than about 0.4 microns because of problems in filling the mold. In the present invention this is overcome by introducing a layer of PMGI (polydimethylglutarimide) between the planarized positive photoresist layer that comprises the mold and the non-magnetic write gap layer on which the mold rests. This greatly facilitates formation of a high aspect ratio hole with a clean flat bottom and essentially vertical sides as well as the subsequent removal of the photoresist after said hole has been filled through electroplating to form a stitched sub-pole.

    摘要翻译： 由于高级GMR磁头的磁盘系统的读取能力得到改善，所以有必要相应地减少记录数据的面积。 这需要在写入间隙处的缝合子极的变窄。 由于填充模具的问题，对于小于约0.4微米的极宽度来说，这已被证明是困难的。 在本发明中，通过在包括模具的平坦化正性光致抗蚀剂层和模具所在的非磁性写入间隙层之间引入一层PMGI（聚二甲基戊二酰亚胺）来克服这一点。 这大大有利于形成具有干净的平坦底部和基本上垂直的侧面的高纵横比孔，以及随后在通过电镀填充所述孔以形成缝合的子极之后去除光致抗蚀剂。

    Method of manufacture of a composite shared pole design for magnetoresistive merged heads
    75.
    发明授权
    Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
    用于磁阻合并头的复合共轭极设计方法

    公开(公告)号：US06393692B1

    公开(公告)日：2002-05-28

    申请号：US09283840

    申请日：1999-04-01

    申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

    IPC分类号： H04R3100

    CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

    摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

    Single stripe magnetoresistive (MR) head
    76.
    发明授权
    Single stripe magnetoresistive (MR) head 失效
    单条磁阻（MR）头

    公开(公告)号：US06373667B1

    公开(公告)日：2002-04-16

    申请号：US09637208

    申请日：2000-08-14

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

    摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

    摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

    High ion beam etch selectivity for partial pole trim application
    77.
    发明授权
    High ion beam etch selectivity for partial pole trim application 失效
    高离子束蚀刻选择性用于部分极细修补应用

    公开(公告)号：US06243939B1

    公开(公告)日：2001-06-12

    申请号：US09412630

    申请日：1999-10-04

    申请人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

    发明人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

    IPC分类号： G11B542

    CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A method of manufacturing a magnetic transducer structure using a special pole etch using an IBE preferably with Kr or Xe, and a write gap material with a high IBE etch rate such as Ta, NiCu alloys, Pd, Pd—Cu alloys. A first layer of pole material and a write gap insulating layer are formed over the substrate. The write gap layer is composed of a material having a high ion beam etch rate compared to the first and second layers of pole material. The write gap insulating layer is preferably composed of Ni—Cu alloy, Pd, Pd—Cu alloys. Next, a second layer of pole material is formed on the first insulating layer. In a key step, we ion beam etch (IBE) the second pole; the write gap insulating layer and the first layer; the second pole serving as an etch mask during the ion beam etching to form a head. In a second preferred embodiment of the invention, the ion beam etching performed using a gas of Kr or Xe. The invention teaches a high IBE etch selectivity from the write gap dielectric to the upper pole (NeFe) for partial pole trim (PPT) applications by three embodiments: (a) selecting high IBE rate gap dielectric materials (e.g., NiCu alloys, Pd, and Pd—Cu alloys, (b) using an IBE gas Kr or Xr or both, instead of Ar, and (c) both (a) and (b).

    摘要翻译： 使用优选用Kr或Xe的IBE制造使用特殊极蚀刻的磁换能器结构的方法以及具有高IBE蚀刻速率的写间隙材料，例如Ta，NiCu合金，Pd，Pd-Cu合金。 第一层极材料层和写间隙绝缘层形成在衬底上。 写间隙层由与第一和第二极材料层相比具有高离子束蚀刻速率的材料组成。 写间隙绝缘层优选由Ni-Cu合金，Pd，Pd-Cu合金构成。 接下来，在第一绝缘层上形成第二极极材料层。 在关键的一步中，我们离子束蚀刻（IBE）是第二极; 写间隙绝缘层和第一层; 第二极在离子束蚀刻期间用作蚀刻掩模以形成头部。 在本发明的第二优选实施例中，使用Kr或Xe的气体进行离子束蚀刻。 本发明通过三个实施例教导了从写间隙电介质到上极（NeFe）的高IBE蚀刻选择性：（a）选择高IBE速率间隙电介质材料（例如，NiCu合金，Pd， 和Pd-Cu合金，（b）使用IBE气体Kr或Xr或两者代替Ar，和（c）（a）和（b）两者。