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137 条记录 (耗时 0.031 秒)

    Narrow track stitched GMR head
    1.
    发明授权
    Narrow track stitched GMR head 失效
    窄轨缝合GMR头

    公开(公告)号：US06416677B1

    公开(公告)日：2002-07-09

    申请号：US09585785

    申请日：2000-06-05

    申请人： Hsiang-Yi Wei ,  Yi-Ting Yao ,  Eiki Narumi ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Hsiang-Yi Wei ,  Yi-Ting Yao ,  Eiki Narumi ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： B44C122

    CPC分类号： G11B5/37

    摘要： As the read capabilities of magnetic disk systems improve due to advanced GMR heads, it becomes necessary to correspondingly reduce the area of recorded data. This requires a narrowing of the stitched sub-pole at the write gap. This has proved difficult for pole widths less than about 0.4 microns because of problems in filling the mold. In the present invention this is overcome by introducing a layer of PMGI (polydimethylglutarimide) between the planarized positive photoresist layer that comprises the mold and the non-magnetic write gap layer on which the mold rests. This greatly facilitates formation of a high aspect ratio hole with a clean flat bottom and essentially vertical sides as well as the subsequent removal of the photoresist after said hole has been filled through electroplating to form a stitched sub-pole.

    摘要翻译： 由于高级GMR磁头的磁盘系统的读取能力得到改善，所以有必要相应地减少记录数据的面积。 这需要在写入间隙处的缝合子极的变窄。 由于填充模具的问题，对于小于约0.4微米的极宽度来说，这已被证明是困难的。 在本发明中，通过在包括模具的平坦化正性光致抗蚀剂层和模具所在的非磁性写入间隙层之间引入一层PMGI（聚二甲基戊二酰亚胺）来克服这一点。 这大大有利于形成具有干净的平坦底部和基本上垂直的侧面的高纵横比孔，以及随后在通过电镀填充所述孔以形成缝合的子极之后去除光致抗蚀剂。

    Robust protective layer for MTJ devices
    2.
    发明申请
    Robust protective layer for MTJ devices 审中-公开
    坚固的MTJ设备保护层

    公开(公告)号：US20070080381A1

    公开(公告)日：2007-04-12

    申请号：US11248965

    申请日：2005-10-12

    申请人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： H01L29/94

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

    摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

    摘要翻译： 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

    Junction stability and yield for spin valve heads
    5.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Exchange bias structure for abutted junction GMR sensor
    8.
    发明授权
    Exchange bias structure for abutted junction GMR sensor 失效
    对接结GMR传感器的交换偏置结构

    公开(公告)号：US07529067B2

    公开(公告)日：2009-05-05

    申请号：US11375323

    申请日：2006-03-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

    摘要翻译： 虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。 由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。 通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。 另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

    Method to make laminated yoke for high data rate giant magneto-resistive head
    10.
    发明授权
    Method to make laminated yoke for high data rate giant magneto-resistive head 失效
    用于高数据速率巨磁阻头的叠片磁轭的方法

    公开(公告)号：US06345435B1

    公开(公告)日：2002-02-12

    申请号：US09443448

    申请日：1999-11-22

    申请人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

    发明人： Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Rodney Lee ,  Kochan Ju

    IPC分类号： G11B542

    CPC分类号： G11B5/59683 ,  G11B5/4813 ,  G11B5/5521 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.

    摘要翻译： 一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。 使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。 基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。 然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。 然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。 然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。