公开(公告)号：US20150236253A1

公开(公告)日：2015-08-20

申请号：US14701831

申请日：2015-05-01

Applicant: Everspin Technologies, Inc.

Inventor： Renu Whig ,  Jason Janesky ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/02 ,  B82Y10/00 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10S977/935

Abstract: In one aspect, the present inventions are directed to a magnetoresistive structure having a tunnel junction, and a process for manufacturing such a structure. The tunnel barrier may be formed between a free layer and a fixed layer in a plurality of repeating process of depositing a metal material and oxidizing at least a portion of the metal material. Where the tunnel barrier is formed by deposition of at least three metal materials interceded by an associated oxidization thereof, the oxidation dose associated with the second metal material may be greater than the oxidation doses associated with the first and third metal materials. In certain embodiments, the fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material.

Abstract translation: 一方面，本发明涉及具有隧道结的磁阻结构，以及制造这种结构的方法。 可以在沉积金属材料和氧化至少一部分金属材料的多个重复工艺中，在自由层和固定层之间形成隧道势垒。 在通过沉积由其相关氧化作用介入的至少三种金属材料形成隧道势垒的地方，与第二金属材料相关的氧化剂量可能大于与第一和第三金属材料相关联的氧化剂量。 在某些实施例中，固定层可以在两层铁磁材料之间的固定层中包括不连续的金属层，例如Ta。

公开(公告)号：US20150044782A1

公开(公告)日：2015-02-12

申请号：US14521213

申请日：2014-10-22

Applicant: Everspin Technologies, Inc.

Inventor： Phillip Mather ,  Jon Slaughter ,  Nicholas Rizzo

IPC: H01L43/12

CPC classification number: H01L43/02 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.

Abstract translation: 磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化 面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。 或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化 功能，以及更多设备设计和布局自由。 感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。

公开(公告)号：US20150021606A1

公开(公告)日：2015-01-22

申请号：US14303200

申请日：2014-06-12

Applicant: Everspin Technologies, Inc.

Inventor： Srinivas V. Pietambaram ,  Bengt J. Akerman ,  Renu Whig ,  Jason Janesky ,  Nicholas D. Rizzo ,  Jon Slaughter

IPC: H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

Abstract translation: MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定 磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层 容易和坚硬的轴。

公开(公告)号：US20140372792A1

公开(公告)日：2014-12-18

申请号：US14297386

申请日：2014-06-05

Applicant: Everspin Technologies, Inc.

Inventor： Jon Slaughter ,  Dimitri Houssameddine ,  Thomas Andre ,  Syed M. Alam

IPC: G06F11/07

CPC classification number: G06F11/073 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677

Abstract: A method is provided for healing reset errors for a magnetic memory using destructive read with selective write-back, including for example, a self-referenced read of spin-torque bits in an MRAM. Memory cells are prepared for write back by one of identifying memory cells determined in error using an error correcting code and inverting the inversion bit for those memory cells determined in error; identifying memory cells determined in error using an error correcting code and resetting a portion of the memory cells to the first state; and resetting one or more memory cells to the first state.

Abstract translation: 提供了一种用于使用具有选择性回写的破坏性读取来恢复磁存储器的复位错误的方法，包括例如MRAM中的自旋转矩位的自参考读取。 存储单元被准备用于使用错误校正码错误地确定的识别存储器单元中的一个进行写回，并且将错误地确定的那些存储器单元的反转位反相; 使用纠错码识别误差确定的存储器单元，并将所述存储器单元的一部分重置为所述第一状态; 以及将一个或多个存储器单元重置为第一状态。

公开(公告)号：US20130264666A1

公开(公告)日：2013-10-10

申请号：US13909622

申请日：2013-06-04

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Phillip Mather ,  Srinivas Pietambaram ,  Jon Slaughter ,  Renu Whig ,  Nicholas Rizzo

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

Abstract translation: 提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。 示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。 另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。