公开(公告)号：US20060014363A1

公开(公告)日：2006-01-19

申请号：US11233318

申请日：2005-09-21

申请人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

发明人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the steps of forming a weakness zone in the thickness of the first layer; bonding the donor wafer to a host wafer; and supplying energy so as to weaken the donor wafer at the level of the zone of weakness. The zone of weakness is formed by subjecting the donor wafer to a co-implantation of at least two different atomic species, while the bonding is carried out by performing a thermal treatment at a temperature between 300° C. and 400° C. for a duration of from 30 minutes to four hours.

摘要翻译： 一种用于形成结构的方法，该结构包括从具有由含锗的半导体材料制成的第一层的施主晶片上去除的层。 该方法包括以下步骤：在第一层的厚度上形成弱区; 将施主晶片键合到主晶片; 并提供能量以便在弱化区的水平上削弱施主晶片。 弱化区通过使施主晶片经受至少两种不同原子物质的共同注入而形成，而通过在300℃和400℃之间的温度下进行热处理来进行接合， 持续时间为30分钟至4小时。

公开(公告)号：US20050196937A1

公开(公告)日：2005-09-08

申请号：US11059122

申请日：2005-02-16

申请人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

发明人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800° C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.

摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层的施主晶片，并且具有自由表面，通过第二层的自由表面注入原子物质以形成弱区的区域 第一层，并将第二层的自由表面结合到主晶片。 该方法还包括提供能量以在弱化区域分离包括主晶片，第二层和第一层的一部分的半导体结构，在小于约800℃的温度下分离后在结构上进行结合强化步骤 以提高第二层和主晶片之间的结合强度，并且选择性地蚀刻第一层部分以将其从结构上除去并暴露第二层的表面。 植入步骤包括选择的植入参数以最小化由于在弱化区域脱离而导致的表面粗糙度。

公开(公告)号：US20050178495A1

公开(公告)日：2005-08-18

申请号：US10508917

申请日：2003-03-21

申请人： Bernard Aspar ,  Olivier Rayssac ,  Frank Fournel

发明人： Bernard Aspar ,  Olivier Rayssac ,  Frank Fournel

IPC分类号： H01L21/67 ,  H01L21/68 ,  H01L21/762

CPC分类号： H01L21/6835 ,  H01L21/76254 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68368

摘要： The present invention relates to a method for transferring at least one element from a donor substrate to a target substrate (40). According to the invention, an element to be transferred is made integral with a handle substrate (30) through the intermediary of a layer of glue (32) capable of being degraded and in which degradation of the glue layer is carried out during a step for freeing the element to be transferred. Application to the transfer of components.

摘要翻译： 本发明涉及一种将至少一种元件从供体衬底转移到目标衬底（40）的方法。 根据本发明，待转移的元件通过一层能够降解的胶水层（32）与手柄衬底（30）形成一体，并且在步骤中执行胶层的劣化， 释放要转移的元素。 应用于组件的转移。

公开(公告)号：US07391094B2

公开(公告)日：2008-06-24

申请号：US11299895

申请日：2005-12-13

申请人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

发明人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

IPC分类号： H01L23/58

CPC分类号： H01L21/76259 ,  H01L21/76251 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.

摘要翻译： 半导体结构包括具有表面并由表面提供非典型表面性质的材料制成的基板，在基板的表面上的结合层，以及与粘合层分子结合的另一层。 一种制造这种半导体结构的方法包括提供具有表面的基板，并且由表面提供非典型表面特性的材料制成，在基板的表面上提供粘合层，使结合层平滑以提供表面， 能够分子结合，并且将另一层分子结合到结合层以形成结构。 非典型表面性质优选包括难以抛光的粗糙度大于0.5nm rms或至少0.4nm rms的粗糙度或与分子键不相容的化学组成中的至少一种。

公开(公告)号：US07189304B2

公开(公告)日：2007-03-13

申请号：US10681566

申请日：2003-10-07

申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

IPC分类号： B32B38/10

CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 切割装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的预定位置保持在支撑件上。 该装置还包括切割装置，该切割装置具有至少一个叶片，用于接触基底并用于将基本的分裂波引入基片。 切割装置与定位构件可操作地相关联，使得至少一个叶片接触环形凹口，并且定位构件防止基底移动。 所述至少一个叶片产生足够强度的分裂波，以将所述切口处的所述基底分成第一和第二部分，并且沿着所述弱化区域从所述基底分离所述层。

公开(公告)号：US07060590B2

公开(公告)日：2006-06-13

申请号：US10753172

申请日：2004-01-06

申请人： Séverine Bressot ,  Olivier Rayssac ,  Bernard Aspar

发明人： Séverine Bressot ,  Olivier Rayssac ,  Bernard Aspar

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： C09J5/00 ,  B81C1/0038 ,  H01L21/76254 ,  H01L21/76259

摘要： The invention relates to a method of removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate to a support substrate. The method is remarkable in that it includes bonding the two substrates together by means of a curable adhesive so that an excess of adhesive is present. This assures proper bonding and provides a peripheral zone of adhesive outside of the joined substrates. Only that portion of adhesive is cured which is present in a connection zone between the substrates, and the peripheral zone of non-cured adhesive is removed prior to detaching the transferable layer. The invention is applicable to fabricating a composite substrate in the fields of electronics, opto-electronics, or optics.

摘要翻译： 本发明涉及一种在将源材料层组装和转移到支撑基底的过程中使用一层粘合剂时去除粘合剂周边区域的方法。 该方法是显着的，其包括通过可固化粘合剂将两个基底粘合在一起，使得存在过量的粘合剂。 这确保了适当的粘合，并且在接合的基底之外提供粘合剂的周边区域。 只有粘合剂的那部分被固化，其存在于基板之间的连接区域中，并且在分离可转移层之前去除非固化粘合剂的周边区域。 本发明可应用于在电子学，光电子学或光学领域制造复合衬底。

公开(公告)号：US07056809B2

公开(公告)日：2006-06-06

申请号：US10695938

申请日：2003-10-30

申请人： Olivier Rayssac

发明人： Olivier Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/02046 ,  H01L21/76254

摘要： The invention relates to a manufacturing process of detachable substrates, the said process comprising a surface condition adjustment treatment of at least one of two layers of material, followed by the reversible bonding of the surfaces of the two layers to make the detachable substrate, characterised in that the said surface condition adjustment treatment comprises the bombardment of the surface to be treated with ion clusters.

摘要翻译： 本发明涉及一种可拆卸基板的制造方法，所述方法包括对两层材料中的至少一层进行表面状态调整处理，接着是两层表面的可逆接合以制造可分离的基板，其特征在于 所述表面状况调节处理包括用离子簇轰击待处理的表面。

公开(公告)号：US06756285B1

公开(公告)日：2004-06-29

申请号：US09913006

申请日：2002-01-09

申请人： Hubert Moriceau ,  Olivier Rayssac ,  Anne-Marie Cartier ,  Bernard Aspar

发明人： Hubert Moriceau ,  Olivier Rayssac ,  Anne-Marie Cartier ,  Bernard Aspar

IPC分类号： H01L2102

CPC分类号： B81C1/00666 ,  B81C2201/0167 ,  H01L21/185 ,  H01L21/76254 ,  Y10T428/12528 ,  Y10T428/31678

摘要： A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers. Application to the realization of electronic circuits and membrane devices.

摘要翻译： 具有受控的内部应力的多层结构，依次包括第一主层（110a），至少与第一主层接触的第一约束适应层（130），至少第二应力适应层（120） 通过与所述第一应力适应层的粘合接触，以及与第二应力适应层接触的第二主层（110b），第一和第二应力适应层具有与第一和第二主层的接触应力。应用于实现 的电子电路和膜装置。

公开(公告)号：US07575988B2

公开(公告)日：2009-08-18

申请号：US11832431

申请日：2007-08-01

申请人： Konstantin Bourdelle ,  Carlos Mazure ,  Pierre Rayssac, legal representative ,  Gisèle Rayssac, legal representative

发明人： Olivier Rayssac

IPC分类号： H01L21/4763

CPC分类号： H01L21/187

摘要： A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.

摘要翻译： 一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括： 定义要转移的层的弱点。 该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。

公开(公告)号：US07449394B2

公开(公告)日：2008-11-11

申请号：US11179713

申请日：2005-07-11

申请人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

发明人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.

摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层并具有自由表面的施主晶片; 通过第二层的自由表面共同植入两种不同的原子物质，以形成第一层中的弱区; 将第二层的自由表面粘合到主晶片; 并且在弱化区域提供能量以分散包含主晶片，第二层和第一层的一部分的半导体结构。 有利地，施主晶片包括SiGe层，并且根据适于使第一种类形成SiGe层中的弱点区域的植入参数来进行原子物质的共同注入，并且使得第二物质能够提供 浓度峰位于供体晶片中的弱点之下，从而使得在弱化区分离导致的表面粗糙度最小化。