公开(公告)号：US20080083920A1

公开(公告)日：2008-04-10

申请号：US11672686

申请日：2007-02-08

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: H01L51/00 ,  C07D251/30

CPC classification number: C07D251/30 ,  H01L28/91

Abstract: A method for manufacturing a capacitor of a semiconductor device by using a composition to prevent leaning of a capacitor. The method includes forming a barrier film and a capacitor oxide film over a semiconductor substrate including an interlayer insulation film with contact plugs for storage nodes; etching the capacitor oxide film and the barrier film until the contact plugs are exposed to form trenches for capacitors; forming lower electrodes for the storage nodes in the trenches; coating the composition over the lower electrodes and baking the composition to form a polymer layer connecting the upper portions of the lower electrodes; performing the wet-dip out process on the resulting structure to remove the capacitor oxide film; and performing an O2 dry etching process to remove the polymer layer.

Abstract translation: 一种通过使用防止电容器倾斜的组合物来制造半导体器件的电容器的方法。 该方法包括在包括具有用于存储节点的接触插塞的层间绝缘膜的半导体衬底上形成阻挡膜和电容器氧化膜; 蚀刻电容器氧化膜和阻挡膜，直到接触塞暴露以形成用于电容器的沟槽; 形成用于沟槽中的存储节点的下电极; 将组合物涂覆在下电极上并烘烤组合物以形成连接下电极的上部的聚合物层; 对所得结构进行浸湿处理以除去电容器氧化膜; 并进行O 2 O 2干蚀刻工艺以除去聚合物层。

公开(公告)号：US07022458B2

公开(公告)日：2006-04-04

申请号：US10719905

申请日：2003-11-21

Applicant: Geun Su Lee ,  Cheol Kyu Bok ,  Seung Chan Moon ,  Ki Soo Shin ,  Jae Hyun Kim ,  Jung Woo Kim ,  Sang Hyang Lee ,  Jae Hyun Kang

Inventor： Geun Su Lee ,  Cheol Kyu Bok ,  Seung Chan Moon ,  Ki Soo Shin ,  Jae Hyun Kim ,  Jung Woo Kim ,  Sang Hyang Lee ,  Jae Hyun Kang

IPC: G03F7/004 ,  C08F10/00

CPC classification number: G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/108

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

Abstract translation: 公开了光致抗蚀剂聚合物和光致抗蚀剂组合物。 由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。 其中X 1，X 2，X 3，R 1，R 2， R 3，R 4，R 5，m，n，o，a，b，c，d和e定义如 说明。

公开(公告)号：US06806025B2

公开(公告)日：2004-10-19

申请号：US10079348

申请日：2002-02-20

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: C07D493/08 ,  C07C17/30 ,  C07D495/08 ,  G03F7/0046 ,  G03F7/0395 ,  Y02P20/55 ,  C07C23/18

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和对晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。其中，X1， X2，Y1，Y2，Y3，Y4，Y5，Y6，Y7，Y8，I和m如本发明的说明书中所定义。

公开(公告)号：US06770415B2

公开(公告)日：2004-08-03

申请号：US09884313

申请日：2001-06-19

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7038

CPC classification number: G03F7/265 ,  C08F8/00 ,  C08F8/14 ,  C08F222/06 ,  C08F232/00 ,  C08F232/04 ,  C08F232/08 ,  G03F7/0395 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  C08F2220/281 ,  C08F220/06 ,  C08F222/14 ,  C08F222/1006

Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Abstract translation: 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂聚合物和包含该光致抗蚀剂的光致抗蚀剂组合物。 本发明的光致抗蚀剂聚合物的保护基被选择性地保护在暴露区域中，因此产生羟基。 羟基与甲硅烷基化剂反应以引起甲硅烷基化过程。 因此，当干涉显影光致抗蚀剂膜时，曝光区域仅保留以形成负图形。 此外，本发明的光致抗蚀剂组合物对基材的粘附性优异，从而防止形成微小图案的图案塌陷。 结果，本光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的光刻工艺。

公开(公告)号：US06720129B2

公开(公告)日：2004-04-13

申请号：US10107659

申请日：2002-03-27

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03P7004

CPC classification number: G03F7/0046 ,  G03F7/0397 ,  Y10S430/108

Abstract: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.

Abstract translation: 公开了使用聚合物的光致抗蚀剂聚合物和光致抗蚀剂组合物。 更具体地，含有由式1表示的马来酰亚胺的光致抗蚀剂聚合物。包含光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性以及四甲基氢氧化铵（TMAH）水溶液的显影能力。 由于组合物在193nm和157nm波长处具有低吸光度，它们适用于使用诸如VUV（157nm）的紫外光源的方法，其中1，R1，R2，R3，R，R'，R' '，R“'，X，a和b在说明书中定义。

公开(公告)号：US06699644B1

公开(公告)日：2004-03-02

申请号：US09651443

申请日：2000-08-30

Applicant: Geun Su Lee ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F700

CPC classification number: G03F7/091 ,  G03F7/0395 ,  G03F7/168 ,  Y10S430/151

Abstract: The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Abstract translation: 本发明提供一种减少或消除在光致抗蚀剂膜上形成不良图案的方法，其通过在曝光之前使光致抗蚀剂膜与碱性溶液接触。 本发明的方法显着地减少或防止T顶部和顶部损失。

公开(公告)号：US06692891B2

公开(公告)日：2004-02-17

申请号：US09879325

申请日：2001-06-12

Applicant: Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7038

CPC classification number: G03F7/0045 ,  G03F7/0395 ,  Y10S430/115 ,  Y10S430/117 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

Abstract: The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.

Abstract translation: 本发明涉及含有光自由基发生剂的光致抗蚀剂组合物，更具体地说，涉及光致抗蚀剂组合物，其包含（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）光自由基发生剂 。 由于光致抗蚀剂上部相对于光致抗蚀剂的下部较高浓度的酸，本发明的光致抗蚀剂组合物减少或防止形成倾斜图案。

公开(公告)号：US06686123B2

公开(公告)日：2004-02-03

申请号：US10035772

申请日：2001-11-09

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung

IPC: G03F7004

CPC classification number: G03F7/0392 ,  G03F7/0046 ,  Y10S430/108

Abstract: Photoresist monomers of following Formulas 1 and 2, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low absorbance of light having the wavelength of 157 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2 and R3 are as defined in the specification of the invention.

Abstract translation: 以下式1和2的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂组合物对晶片具有优异的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物具有波长为157nm的光的吸光度低，因此适用于使用紫外光源如VUV（157nm）和EUV（13nm）的光刻工艺制造微波电路 高集成半导体器件，其中R1，R2和R3如本发明的说明书中所定义。

公开(公告)号：US06573012B1

公开(公告)日：2003-06-03

申请号：US09630620

申请日：2000-08-02

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: G03F7039

CPC classification number: G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

Abstract: The present invention provides compounds represented by formulas 1a and 1b, and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

Abstract translation: 本发明提供由式1a和1b表示的化合物和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

公开(公告)号：US06465147B1

公开(公告)日：2002-10-15

申请号：US09468984

申请日：1999-12-21

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03C173

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

Abstract: The present invention relates to a cross-linker for a photoresist polymer, and a process for forming a negative photoresist pattern by using the same. Preferred cross-linkers according to the invention comprise compounds having two or more aldehyde groups, such as glutaric dialdehyde, 1,4-cyclohexane dicarboxaldehyde, or the like. Further, a photoresist composition is disclosed, which comprises (i) a cross-linker as described above, (ii) a photoresist copolymer comprising a hydroxyl-containing alicyclic monomer, (iii) a photoacid generator and (iv) an organic solvent, as well as a process for forming a photoresist pattern using such photoresist composition.

Abstract translation: 本发明涉及光致抗蚀剂聚合物的交联剂，以及通过使用该光致抗蚀剂聚合物形成负性光致抗蚀剂图案的方法。 根据本发明的优选的交联剂包含具有两个或多个醛基的化合物，例如戊二醛，1,4-环己烷二甲醛等。此外，公开了光致抗蚀剂组合物，其包含（i）交联剂 如上所述，（ii）包含含羟基的脂环族单体，（iii）光酸产生剂和（iv）有机溶剂）的光致抗蚀剂共聚物以及使用这种光致抗蚀剂组合物形成光致抗蚀剂图案的方法。