公开(公告)号：US20110049533A1

公开(公告)日：2011-03-03

申请号：US12916953

申请日：2010-11-01

申请人： Yosuke Shimamune ,  Hiroyuki Ohta ,  Akiyoshi Hatada ,  Akira Katakami ,  Naoyoshi Tamura

发明人： Yosuke Shimamune ,  Hiroyuki Ohta ,  Akiyoshi Hatada ,  Akira Katakami ,  Naoyoshi Tamura

IPC分类号： H01L29/24

CPC分类号： H01L29/165 ,  H01L29/045 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.

摘要翻译： 公开了一种制造半导体器件的方法，其能够抑制短沟道效应并改善载流子迁移率。 在该方法中，在对应于源极区和漏极区的硅衬底中形成沟槽。 当外延生长p型半导体混晶层以填充沟槽时，沟槽的表面被刻面划分，半导体混晶层的延伸部分形成在第二侧壁绝缘膜的底表面和 硅衬底和延伸部分与源极延伸区域和漏极延伸区域接触。

公开(公告)号：US07793551B2

公开(公告)日：2010-09-14

申请号：US12184426

申请日：2008-08-01

申请人： Hiromi Shimazu ,  Yohei Tanno ,  Hiroyuki Ohta ,  Ryuji Takada ,  Takayuki Shimodaira

发明人： Hiromi Shimazu ,  Yohei Tanno ,  Hiroyuki Ohta ,  Ryuji Takada ,  Takayuki Shimodaira

IPC分类号： G01B7/16

CPC分类号： G01L1/2225 ,  G01L1/18 ,  G01L1/26 ,  G01L5/162 ,  Y10T29/49103

摘要： The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

摘要翻译： 本发明提供了一种由低功耗驱动的负载传感器，可以高精度地测量，并且具有高可靠性而不被破坏。 负载传感器被构造成使得用于检测应变的检测杆通过冲击松弛材料设置在靠近销的中心的孔的内部，并且半导体应变传感器设置在检测棒中，在负载 传感器检测从销的内部产生的应变施加到销的负载。

公开(公告)号：US07770462B2

公开(公告)日：2010-08-10

申请号：US12184104

申请日：2008-07-31

申请人： Hiroyuki Ohta ,  Takashi Sumigawa

发明人： Hiroyuki Ohta ,  Takashi Sumigawa

IPC分类号： G01B7/06

CPC分类号： G01L1/18

摘要： A mechanical quantity measuring apparatus is provided which can make highly precise measurements and is not easily affected by noise even when it is supplied an electricity through electromagnetic induction or microwaves. At least a strain sensor and an amplifier, an analog/digital converter, a rectification/detection/modulation-demodulation circuit, and a communication control circuit are formed in one and the same silicon substrate. Or, the silicon substrate is also formed at its surface with a dummy resistor which has its longitudinal direction set in a particular crystal orientation and which, together with the strain sensor, forms a Wheatstone bridge. With this arrangement, even when a current flowing through the sensor is reduced, measured data is prevented from being buried in noise, allowing the sensor to operate on a small power and to measure a mechanical quantity with high precision even when it is supplied electricity through electromagnetic induction or microwaves.

摘要翻译： 提供了能够进行高精度测量并且即使当通过电磁感应或微波供应电而不易受噪声影响的机械量测量装置。 至少一个应变传感器和放大器，模拟/数字转换器，整流/检测/调制解调电路和通信控制电路形成在同一个硅衬底中。 或者，硅衬底也在其表面上形成一个虚拟电阻器，该虚拟电阻器的纵向方向设置在特定的晶体取向中，并与应变传感器一起形成惠斯通电桥。 通过这种布置，即使当流过传感器的电流减小时，也可以防止测量数据被埋入噪声中，使得传感器能够以小功率工作，并且即使在通过电力供应通过时也以高精度测量机械量 电磁感应或微波。

公开(公告)号：US07759215B2

公开(公告)日：2010-07-20

申请号：US11723246

申请日：2007-03-19

申请人： Hiroyuki Ohta

发明人： Hiroyuki Ohta

IPC分类号： H01L21/76

CPC分类号： H01L21/76232 ,  H01L21/76224 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7846

摘要： The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.

摘要翻译： 制造半导体器件的方法具有以下步骤：通过使用包括第一氮化硅膜并具有窗口的图案作为掩模来蚀刻半导体衬底以形成隔离沟槽; 沉积覆盖隔离沟槽的内表面的第二氮化硅膜; 形成掩埋隔离沟槽的第一氧化硅膜; 蚀刻并去除隔离沟槽的上部区域中的第一氧化硅膜; 蚀刻和去除暴露的第二氮化硅膜; 化学机械抛光第二氧化硅膜; 并蚀刻和去除暴露的第一氮化硅膜。

公开(公告)号：US20100154555A1

公开(公告)日：2010-06-24

申请号：US12719977

申请日：2010-03-09

申请人： Takashi Sumigawa ,  Hiroyuki Ohta

发明人： Takashi Sumigawa ,  Hiroyuki Ohta

IPC分类号： G01B7/16

CPC分类号： G01B7/18 ,  G01B7/16 ,  G01B7/20 ,  G01L1/2206 ,  G01L1/2262 ,  G01L5/0047

摘要： An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

摘要翻译： 提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。 对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率 测量方向设定得很小。 设备上表面被保护构件覆盖。 可以测量特定方向的应变，实现误差小，精度更高的机械量测量。 可以提高装置本身的耐冲击性和耐环境性。

公开(公告)号：US07707894B2

公开(公告)日：2010-05-04

申请号：US12210261

申请日：2008-09-15

申请人： Takashi Sumigawa ,  Hiroyuki Ohta

发明人： Takashi Sumigawa ,  Hiroyuki Ohta

IPC分类号： G01B7/16

CPC分类号： G01B7/18 ,  G01B7/16 ,  G01B7/20 ,  G01L1/2206 ,  G01L1/2262 ,  G01L5/0047

摘要： An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

摘要翻译： 提供了一种装置结构和测量方法，以保持半导体机械量测量装置的高精度和高可靠性，该装置检测机械量并无线传送测量信息。 对于半导体机械量测量装置的硅衬底，例如，沿着测量方向将衬底厚度与衬底长度的比率设置得较小，并且沿着垂直于半导体机械量测量装置的方向的衬底厚度与衬底长度的比率 测量方向设定得很小。 设备上表面被保护构件覆盖。 可以测量特定方向的应变，实现误差小，精度更高的机械量测量。 可以提高装置本身的耐冲击性和耐环境性。

公开(公告)号：US07678641B2

公开(公告)日：2010-03-16

申请号：US11211103

申请日：2005-08-25

申请人： Toshifumi Mori ,  Katsuaki Ookoshi ,  Takashi Watanabe ,  Hiroyuki Ohta

发明人： Toshifumi Mori ,  Katsuaki Ookoshi ,  Takashi Watanabe ,  Hiroyuki Ohta

IPC分类号： H01L29/00

CPC分类号： H01L21/76224 ,  H01L21/76229 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.

摘要翻译： 提供了一种在硅衬底上形成有STI结构的器件隔离区域以限定器件区域的半导体器件，其中器件隔离区域包括形成在硅衬底中的器件隔离沟槽，以及器件隔离绝缘膜填充 器件隔离沟槽。 器件隔离绝缘膜的至少表面部分由耐高温膜形成。

公开(公告)号：US07584668B2

公开(公告)日：2009-09-08

申请号：US11834727

申请日：2007-08-07

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno ,  Yoshihisa Kiyotoki ,  Kenji Onodera ,  Kenji Araki

IPC分类号： G01B7/16

CPC分类号： G01B7/18 ,  F16K37/0083

摘要： A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

摘要翻译： 根据本发明的阀装置的监测系统包括包括桥接电路的半导体单晶衬底和包括杂质扩散电阻器的桥接电路。 半导体单晶衬底安装在设置在驱动轴端部的阀装置的阀杆，阀杆，驱动轴或弹性体中的任一个上。 通过半导体单晶衬底测量阀装置的推力和扭矩，然后测量值用于监测阀装置。

公开(公告)号：US20090199650A1

公开(公告)日：2009-08-13

申请号：US12429123

申请日：2009-04-23

申请人： Hiromi Shimazu ,  Hiroyuki Ohta

发明人： Hiromi Shimazu ,  Hiroyuki Ohta

IPC分类号： G01B7/16

CPC分类号： G01B7/18

摘要： It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

摘要翻译： 其目的是防止由于大的变形而由单晶硅衬底制成的机械量测量装置的破损。 用于测量变形的安装板设置在由具有失真检测单元的半导体单晶衬底制成的传感器芯片的后表面上。 即使在要测量的对象发生大的失真，也可以通过安装基板来控制在半导体单晶衬底中发生的变形。 因此，半导体单晶衬底不会破裂，并且可以提供高度可靠的机械量测量装置。

公开(公告)号：US07518202B2

公开(公告)日：2009-04-14

申请号：US11349913

申请日：2006-02-09

申请人： Hisashi Tanie ,  Takashi Sumigawa ,  Hiroyuki Ohta

发明人： Hisashi Tanie ,  Takashi Sumigawa ,  Hiroyuki Ohta

IPC分类号： H01L29/84

CPC分类号： G01B7/18 ,  G01L1/2293

摘要： A semiconductor mechanical quantity measuring apparatus in which the reverse surface of a strain-detecting semiconductor element is bonded to an object of measurement, and a member having a small elastic modulus is interposed between the wiring board for supporting the strain-detecting semiconductor element and the strain-detecting semiconductor element. It then becomes possible to reduce an undesirable effect that the rigidity and thermal deformation of the wiring board have on the strain-detecting semiconductor element, while supporting the strain-detecting semiconductor element.

摘要翻译： 一种半导体机械量测量装置，其中应变检测用半导体元件的反面与测量对象接合，并且具有小弹性模量的构件插入在用于支撑应变检测用半导体元件的布线基板和 应变检测半导体元件。 然后，可以减少在应变检测用半导体元件上配线基板的刚性和热变形对应变检测用半导体元件的不良影响。