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218 条记录 (耗时 0.23 秒)

    Semiconductor device
    71.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07649238B2

    公开(公告)日：2010-01-19

    申请号：US12108369

    申请日：2008-04-23

    申请人： Tetsuya Watanabe ,  Takashi Ipposhi

    发明人： Tetsuya Watanabe ,  Takashi Ipposhi

    IPC分类号： H01L29/06 ,  H01L27/12

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78615

    摘要： In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.

    摘要翻译： 在PMOS晶体管中，源极 - 漏极区域沿着栅极宽度分成四个部分，并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触，使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触，并且身体区域的电位通过井身区域从身体绑定 地区。

    Semiconductor device
    74.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07391095B2

    公开(公告)日：2008-06-24

    申请号：US11555923

    申请日：2006-11-02

    申请人： Tetsuya Watanabe ,  Takashi Ipposhi

    发明人： Tetsuya Watanabe ,  Takashi Ipposhi

    IPC分类号： H01L29/06 ,  H01L27/12

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78615

    摘要： In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.

    摘要翻译： 在PMOS晶体管中，源极 - 漏极区域沿着栅极宽度分成四个部分，并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触，使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触，并且身体区域的电位通过井身区域从身体绑定 地区。

    Wafer surface observing method and apparatus
    77.
    发明申请
    Wafer surface observing method and apparatus 有权
    晶圆表面观察方法及装置

    公开(公告)号：US20070269100A1

    公开(公告)日：2007-11-22

    申请号：US11698987

    申请日：2007-01-29

    申请人： Hiroshi Higashi ,  Tetsuya Watanabe ,  Kenji Aiko

    发明人： Hiroshi Higashi ,  Tetsuya Watanabe ,  Kenji Aiko

    IPC分类号： G06K9/00

    CPC分类号： G01N21/9501 ,  G01N21/9503

    摘要： A wafer surface observing apparatus for inspecting a peripheral portion of an object has (A) a lens system and a CCD camera for taking images of the peripheral portion of the object, (B) storage for storing image data about the taken images, and (C) display for displaying the image data stored in the storage device. In particular, the present apparatus can have functions of rotating the object placed on a prealignment portion, recording images of one full outer periphery of an end portion of the object by the lens system and CCD camera into the location where the orientation flat portions or notched portions of the object are placed in position, accepting the images into the storage device, and displaying the images on a CRT.

    摘要翻译： 用于检查物体的周边部分的晶片表面观察装置具有（A）用于拍摄物体的周边部分的图像的透镜系统和CCD照相机，（B）用于存储关于拍摄图像的图像数据的存储器和（ C）显示用于显示存储在存储装置中的图像数据。 具体地说，本装置具有使放置在预对准部上的物体旋转的功能，通过透镜系统和CCD照相机将物体的端部的一个完整外周的图像记录到定位平面部分或切口的位置 将物体的部分放置在适当位置，将图像接收到存储装置中，并将图像显示在CRT上。

    Process for producing triarylsulfonium salt
    78.
    发明申请
    Process for producing triarylsulfonium salt 有权

    公开(公告)号：US20070083060A1

    公开(公告)日：2007-04-12

    申请号：US10576299

    申请日：2004-10-04

    申请人： Motoshige Sumino ,  Kazuhito Fukasawa ,  Shigeaki Imazeki ,  Tetsuya Watanabe

    发明人： Motoshige Sumino ,  Kazuhito Fukasawa ,  Shigeaki Imazeki ,  Tetsuya Watanabe

    IPC分类号： C07C319/22

    CPC分类号： C07C381/12

    摘要： [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R1's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R1; and A1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX   [2]wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA1   [3] wherein, A1 represents the same as above, or a salt thereof.

    RELAY
    79.
    发明申请
    RELAY 有权
    中继

    公开(公告)号：US20060231148A1

    公开(公告)日：2006-10-19

    申请号：US11293299

    申请日：2005-12-05

    申请人： Tetsuya Watanabe

    发明人： Tetsuya Watanabe

    IPC分类号： F15C1/04

    CPC分类号： F15C1/04 ,  Y10T137/2082 ,  Y10T137/2196 ,  Y10T137/6606

    摘要： A relay long in service life aiming at higher reliability and lower cost is achieved by use of a technology of microelectromechanical-systems. The relay comprises a flow path having narrow chores and wide chokes, formed by bonding two insulating members together, a plurality of liquid chambers formed by partitioning the flow path with the narrow chokes and the wide chokes, a plurality of electrodes disposed at the plurality of the liquid chambers, respectively, first and second gas chambers disposed so as to communicate with respective ends of the flow path, a gas sealed in the first and second gas chambers, respectively, heating means for heating the gas, and holes defined in one of the insulating members, communicating with the flow path, respectively, wherein a conductive fluid is introduced into the flow path through respective inlet ports of the holes, and the respective inlet ports are sealed.

    摘要翻译： 通过使用微机电系统的技术，实现了更长的使用寿命，从而实现更高的可靠性和更低的成本。 继电器包括通过将两个绝缘构件结合在一起形成的具有狭窄的杂项和宽扼流圈的流路，通过将流动路径与窄扼流圈和宽扼流圈隔开而形成的多个液体室，多个电极 分别设置为与流路的各端连通的第一和第二气体室，分别密封在第一和第二气体室中的气体，用于加热气体的加热装置，以及以下 绝缘构件分别与流路连通，其中导电流体通过孔的相应入口引入流路，并且各个入口被密封。