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151 条记录 (耗时 0.051 秒)

    Magnetoresistive spin valve sensor with tri-layer free layer
    72.
    发明授权
    Magnetoresistive spin valve sensor with tri-layer free layer 有权
    具有三层自由层的磁阻自旋阀传感器

    公开(公告)号：US07333306B2

    公开(公告)日：2008-02-19

    申请号：US11209231

    申请日：2005-08-23

    申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T428/1121

    摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

    摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。 这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。 在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。 所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

    Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R
    73.
    发明申请
    Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
    为NiFe（自由）MTJ堆叠形成非磁性帽以增强dR / R的新方法

    公开(公告)号：US20070243638A1

    公开(公告)日：2007-10-18

    申请号：US11404446

    申请日：2006-04-14

    申请人： Cheng Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    发明人： Cheng Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    IPC分类号： H01L21/00

    CPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/12

    摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.

    摘要翻译： 公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩 。 任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。 优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。 在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

    Self-pinned GMR structure by annealing
    76.
    发明授权
    Self-pinned GMR structure by annealing 失效
    通过退火自固定GMR结构

    公开(公告)号：US07320169B2

    公开(公告)日：2008-01-22

    申请号：US10846406

    申请日：2004-05-14

    申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/147

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

    摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

    摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

    Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices
    78.
    发明授权
    Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices 失效
    在CIP / CPP GMR和MTJ器件中用于反平行钉扎层的双层间隔物

    公开(公告)号：US06870711B1

    公开(公告)日：2005-03-22

    申请号：US10863406

    申请日：2004-06-08

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/39 ,  Y10T29/49044

    摘要： A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.

    摘要翻译： 发现适用于CIP或CPP GMR传感器，TMR传感器或MRAM元件的AP1 /耦合双层/ AP2 / AFM的钉扎/钉扎层配置具有改善的磁稳定性，产生良好的值 dR / R，并且具有高的饱和磁化值，可以调节以满足磁场退火的要求。 耦合双层是Ru / Rh或其合金层，其通过改变Ru层或Rh层的厚度来提供宽范围的耦合强度。