公开(公告)号：US06777961B2

公开(公告)日：2004-08-17

申请号：US10144733

申请日：2002-05-15

申请人： Kazuaki Hamamoto ,  Inao Toyoda

发明人： Kazuaki Hamamoto ,  Inao Toyoda

IPC分类号： G01R2708

CPC分类号： G01J5/12 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/00

摘要： A sensor has a series circuit, which includes first and second end terminals, a set of thermocouples electrically connected in series between the first end terminal and the second end terminal, and electrical inspection terminals, which extend from corresponding intermediate points in the series circuit between the first end terminal and the second end terminal to divide the set of thermocouples into smaller groups of thermocouples. A resistance value of each group of thermocouples is measured through adjacent two of the first and second end terminals and the electrical inspection terminals while the sensor is in a wafer state. Whether the thermopile infrared sensor is normal is determined based on the measured resistance value of each group of thermocouples.

摘要翻译： 传感器具有串联电路，其包括第一端子和第二端子，串联电连接在第一端子端子和第二端子端子之间的一组热电偶，以及电气检查端子，其从串联电路中的相应中间点延伸到 第一端子和第二端子端子将热电偶组分成较小的热电偶组。 当传感器处于晶片状态时，通过相邻的第一端子和第二端子端子以及电气检查端子来测量每组热电偶的电阻值。 基于每组热电偶的测量电阻值来确定热电堆红外传感器是否正常。

公开(公告)号：US06734671B2

公开(公告)日：2004-05-11

申请号：US10091592

申请日：2002-03-07

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Hirofumi Uenoyama ,  Toshihisa Suzuki ,  Osamu Mochizuki ,  Kiyoshi Natsume

IPC分类号： G01R3309

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L27/22

摘要： Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

摘要翻译： 在由硅制成的衬底的绝缘表面上形成磁阻器件。 这些器件通过使用形成在衬底表面上的布线层的绝缘膜串联连接。 形成用于钝化的绝缘膜以覆盖器件和布线层。 通过有机膜在钝化绝缘膜上形成Ni-Fe合金的磁屏蔽层，用于缓解热应力以覆盖其中一个器件。 在从晶片去除包含磁阻器件和其他部件的传感器芯片之后，通过热处理将芯片通过Ag糊层结合到引线框架。 优选地，磁屏蔽层由Ni含量为69％以下的Ni-Fe合金制成。

公开(公告)号：US06649988B2

公开(公告)日：2003-11-18

申请号：US10122377

申请日：2002-04-16

申请人： Inao Toyoda ,  Takahiko Yoshida ,  Kiyonari Oda

发明人： Inao Toyoda ,  Takahiko Yoshida ,  Kiyonari Oda

IPC分类号： H01L2982

CPC分类号： G01L9/0054 ,  H01L29/045 ,  H01L29/84

摘要： Metal wiring segments, which are located at peripheral positions of a diaphragm, are formed on a main surface of a thick portion of a semiconductor substrate. A ratio S/d is larger than 100, where an area of the diaphragm is S &mgr;m2 and a thickness thereof is d &mgr;m. Further, a total area of the metal wiring segments arranged on first sides of the substrate is larger than total area of the metal wiring segments arranged on second sides of the substrate, where the first sides indicate the sides in parallel with crystalline axis and the second sides indicate the sides in parallel with crystalline axis.

摘要翻译： 位于隔膜的周边位置的金属配线段形成在半导体衬底的厚部的主表面上。 比例S / d大于100，其中隔膜的面积为S mum 2，其厚度为d mum。 此外，布置在基板的第一侧上的金属布线段的总面积大于布置在基板的第二侧上的金属布线段的总面积，其中第一侧表示与<110>晶轴平行的边 第二面表示与<100>晶轴平行的两侧。

公开(公告)号：US06580600B2

公开(公告)日：2003-06-17

申请号：US10157197

申请日：2002-05-30

申请人： Inao Toyoda ,  Hajime Matsuhashi ,  Kazushi Asami

发明人： Inao Toyoda ,  Hajime Matsuhashi ,  Kazushi Asami

IPC分类号： H01G900

CPC分类号： G01N27/225 ,  Y10T29/417

摘要： A capacitance type humidity detecting sensor has two electrodes opposing each other with a gap interposed therebetween to form a capacitor on a silicon substrate with a silicon oxide film formed on a surface thereof. A moisture-sensitive film is formed so as to cover the two electrodes with a silicon nitride film interposed therebetween. The silicon nitride film protects the two electrodes from moisture passing through the moisture-sensitive film. The capacitance formed between the two electrodes changes in accordance with ambient humidity. A switched capacitor circuit formed in a circuit element portion processes a signal indicative of a change in the capacitance formed between the two electrodes.

公开(公告)号：US06521882B1

公开(公告)日：2003-02-18

申请号：US09522604

申请日：2000-03-10

申请人： Kazuyoshi Sumiya ,  Keiji Horiba ,  Masaki Takashima ,  Inao Toyoda

发明人： Kazuyoshi Sumiya ,  Keiji Horiba ,  Masaki Takashima ,  Inao Toyoda

IPC分类号： G01J142

CPC分类号： G01J1/44 ,  G01J1/0271 ,  G01J1/04 ,  G01J1/0418 ,  G01J1/0437 ,  G01J1/06 ,  G01J1/1626 ,  G01J1/4228

摘要： Plural photodetectors for receiving light and generating detection signals. A light amount controlling portion is arranged above the photodetectors for controlling an amount of the light to the photodetectors according to an incident angle. A weighting portion for weighting sensitivities of the photodetectors respectively. The sensitivities are weighted to provide a total output characteristic of the weighted detection signals of which magnitude varies according to the incident angle. Weighting is provided by a signal processing circuit by controlling gains, or a translucent film on the photodetectors for controlling transparencies portions above respective photodetectors, or opaque films on the photodetectors for controlling amounts of the light to respective photodetectors. A first function signal may be obtained from a part of photodetectors for an air conditioner and a second function signal may be obtained from all of photodetectors for head lamp on/off controlling. Each coaxially arranged photodetector is divided to provide a semicircle or a semi-ring shape arranged with respect to the front direction of the vehicle to provide orientation angle data to control the air conditioner.

摘要翻译： 用于接收光并产生检测信号的多个光电探测器。 光量控制部分布置在光电检测器的上方，用于根据入射角度控制对光电检测器的光量。 用于分别对光电检测器的灵敏度进行加权的加权部分。 对灵敏度进行加权，以提供加权检测信号的总输出特性，其加权检测信号的大小根据入射角度而变化。 通过控制增益由信号处理电路提供加权，或者在光电检测器上用于控制透镜上的各个光电检测器上的部分的半透明膜，或光电检测器上的不透明膜，以控制光量到各个光电检测器。 可以从空调的一部分光电检测器获得第一功能信号，并且可以从用于头灯开/关控制的所有光电检测器获得第二功能信号。 每个同轴布置的光电检测器被分割以提供相对于车辆的前方向布置的半圆形或半环形状，以提供用于控制空调的定向角度数据。

公开(公告)号：US06388279B1

公开(公告)日：2002-05-14

申请号：US09095131

申请日：1998-06-10

申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

IPC分类号： H01L2720

CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

公开(公告)号：US06329825B1

公开(公告)日：2001-12-11

申请号：US09440886

申请日：1999-11-16

申请人： Hiroaki Tanaka ,  Inao Toyoda

发明人： Hiroaki Tanaka ,  Inao Toyoda

IPC分类号： G01R1702

CPC分类号： G01D3/0365 ,  G01L9/065

摘要： A pressure detecting bridge circuit produces a sensor signal Sd. A temperature detecting bridge circuit produces a temperature signal St. A reference voltage generating circuit produces a reference signal Sa. An analog multiplexer processes these signals Sd, St and Sa in a time-divisional manner. A differential amplification circuit and an A/D conversion circuit are commonly used to obtain the digital data corresponding to the sensor signal Sd, the temperature signal St and the reference signal Sa. The temperature detecting bridge circuit includes reference resistance elements. By adjusting the design resistance values of the reference resistance elements, the variation width of the sensor signal Sd in a pressure measuring range of the pressure detecting bridge circuit is substantially equalized in advance with the variation width of the temperature signal St in a temperature measuring range of the temperature detecting bridge circuit.

摘要翻译： 压力检测桥电路产生传感器信号Sd。 温度检测桥接电路产生温度信号St.A参考电压产生电路产生参考信号Sa. 模拟多路复用器以时分方式处理这些信号Sd，St和Sa。 差分放大电路和A / D转换电路通常用于获得对应于传感器信号Sd，温度信号St和参考信号Sa.的数字数据。 温度检测桥电路包括参考电阻元件。 通过调整基准电阻元件的设计电阻值，压力检测桥电路的压力测量范围内的传感器信号Sd的变化幅度与温度测量范围内的温度信号St的变化宽度预先基本相等 的温度检测桥接电路。

公开(公告)号：US5770883A

公开(公告)日：1998-06-23

申请号：US715731

申请日：1996-09-19

申请人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

发明人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

IPC分类号： G01L9/00 ,  G01L9/06 ,  H01L27/02 ,  H01L29/82

CPC分类号： G01L9/06 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/0203

摘要： A pair of signal voltages outputted from a bridge circuit composed of plural strain gauges are linearly amplified individually by a pair of amplifiers, whereupon a difference between the pair of signal voltages is detected. The pair of amplifiers are formed respectively in regions that are symmetrical with each other on a chip. As a result, variations in the output characteristics between the amplifiers are decreased.

摘要翻译： 从由多个应变仪组成的桥式电路输出的一对信号电压被一对放大器单独线性地放大，从而检测一对信号电压之间的差。 一对放大器分别形成在芯片上彼此对称的区域中。 结果，放大器之间的输出特性的变化减小。

公开(公告)号：US5761957A

公开(公告)日：1998-06-09

申请号：US796117

申请日：1997-02-06

申请人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

发明人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

IPC分类号： B81C1/00 ,  G01L9/00 ,  G01L19/04 ,  G01L9/06 ,  H01C17/28

CPC分类号： B81C1/00404 ,  G01L19/04 ,  G01L9/0042 ,  Y10T29/49103

摘要： A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship: 0.65

摘要翻译： 半导体压力传感器包括通过各向异性蚀刻形成在（110）硅衬底上的八边形形状的膜片。 当由膜的（110）面和（111）面的交叉线限定的隔膜的两侧之间的距离被表示为L1和限定的隔膜的一侧的长度 通过（110）面和（100）面的交线表示为L2，膜片形成为满足以下关系：0.65

公开(公告)号：US20090199632A1

公开(公告)日：2009-08-13

申请号：US12320957

申请日：2009-02-10

申请人： Inao Toyoda

发明人： Inao Toyoda

IPC分类号： G01F1/692 ,  B32B38/00

CPC分类号： G01F15/18 ,  G01F1/684 ,  G01F1/692 ,  G01F15/14 ,  H01L2224/48091 ,  Y10T29/49007 ,  H01L2924/00014

摘要： A sensor apparatus and a method of manufacturing the same are disclosed. The sensor apparatus includes: a sensor chip; a housing receiving the sensor chip; an electric conductive member connected with a terminal of the senor chip; and a molded member covering a covered portion including a connection portion where the terminal and the electric conductive member are connected. The senor chip is bonded to a bonding member of the housing via an adhesive member. A surface of the housing, a surface of the adhesive member, and a front surface of the sensor chip are in the same plane at a boundary part of the covered portion.

摘要翻译： 公开了传感器装置及其制造方法。 传感器装置包括：传感器芯片; 接收传感器芯片的壳体; 与传感器芯片的端子连接的导电构件; 以及覆盖包括端子和导电构件连接的连接部分的覆盖部分的模制构件。 传感器芯片经由粘接部件与外壳的接合部件接合。 壳体的表面，粘合构件的表面和传感器芯片的前表面在被覆盖部分的边界部分处于同一平面。