Sandwich display tray
    71.
    外观设计
    Sandwich display tray 有权
    三明治显示托盘

    公开(公告)号:USD660650S1

    公开(公告)日:2012-05-29

    申请号:US29395020

    申请日:2011-11-14

    申请人: John Moore

    设计人: John Moore

    PIEZOELECTRIC SENSOR BASED SMART-DIE STRUCTURE FOR PREDICTING THE ONSET OF FAILURE DURING DIE CASTING OPERATIONS
    73.
    发明申请
    PIEZOELECTRIC SENSOR BASED SMART-DIE STRUCTURE FOR PREDICTING THE ONSET OF FAILURE DURING DIE CASTING OPERATIONS 有权
    基于压电传感器的智能模式结构,用于预测DIE铸造操作过程中的故障发生

    公开(公告)号:US20080250863A1

    公开(公告)日:2008-10-16

    申请号:US12102725

    申请日:2008-04-14

    申请人: John Moore

    发明人: John Moore

    摘要: An in-situ apparatus is provided for monitoring the state of stress/strain and cracking in a die surface. The apparatus may also be used to facilitate the prudent removal of the die from the surface so that it may be repaired before catastrophic failure occurs. Accordingly, the yield of a process used to generate die cast structures may be greatly increased.

    摘要翻译: 提供了一种用于监测模具表面中的应力/应变状态和开裂状态的原位设备。 该装置还可用于促进模具从表面的谨慎去除,使得其可以在发生灾难性故障之前被修复。 因此,用于产生压铸结构的方法的产率可以大大增加。

    Textiles with High Water Release Rates and Methods for Making Same
    74.
    发明申请
    Textiles with High Water Release Rates and Methods for Making Same 审中-公开
    高释放率的纺织品及其制作方法

    公开(公告)号:US20080040866A1

    公开(公告)日:2008-02-21

    申请号:US11844633

    申请日:2007-08-24

    IPC分类号: D06M13/00

    摘要: Textiles treated with hydrophobic dispersions that exhibit superior drying rates and lower spin-dry water contents are disclosed. Polytetrafluoroethylene, polyvinyl acetate, and polyvinyl acetate/acrylic copolymer dispersions are used to treat textiles, including yarns, fabrics, linens, and articles of clothing. The use of dispersions create textiles with a discontinuous treatment of discrete individual hydrophobic particles applied to the surface. The treated textiles exhibit superior drying properties at very low levels of treatment. Also provided are methods for treating textiles with hydrophobic dispersions. The incremental cost to the textile of the treatment is minimized by low levels of treatment and flexibility in application.

    摘要翻译: 公开了用疏水分散体处理的纺织品,其表现出优异的干燥速率和较低的旋转干燥水含量。 聚四氟乙烯,聚乙酸乙烯酯和聚乙酸乙烯酯/丙烯酸共聚物分散体用于处理纺织品,包括纱线,织物,亚麻布和衣物。 使用分散体产生不连续处理施加到表面上的离散的单独疏水颗粒的纺织品。 经处理的纺织品在非常低的处理水平下表现出优异的干燥性能。 还提供了用疏水分散体处理织物的方法。 通过低水平的治疗和应用的灵活性,最大限度地减少了纺织品治疗的增加成本。

    Small electrode for resistance variable devices
    75.
    发明申请
    Small electrode for resistance variable devices 有权
    用于电阻可变器件的小电极

    公开(公告)号:US20070166983A1

    公开(公告)日:2007-07-19

    申请号:US11598089

    申请日:2006-11-13

    IPC分类号: H01L21/44

    摘要: A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and second electrodes, and the second end of the first electrode is in contact with the resistance variable material. Methods for forming the memory element are also provided.

    摘要翻译: 提供包括第一和第二电极的存储元件。 第一电极是锥形的,使得第一电极的第一端大于第一电极的第二端。 电阻可变材料层位于第一和第二电极之间,第一电极的第二端与电阻变化材料接触。 还提供了形成存储元件的方法。

    ELECTROLESS PLATING OF METAL CAPS FOR CHALCOGENIDE-BASED MEMORY DEVICES
    76.
    发明申请
    ELECTROLESS PLATING OF METAL CAPS FOR CHALCOGENIDE-BASED MEMORY DEVICES 有权
    用于基于氯化镓的存储器件的金属封装的电镀

    公开(公告)号:US20070123039A1

    公开(公告)日:2007-05-31

    申请号:US11668107

    申请日:2007-01-29

    IPC分类号: H01L21/44

    摘要: A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.

    摘要翻译: 提供了一种在基于硫族化物的存储器件中在导电互连上形成金属帽的方法,包括:在衬底上形成第一导电材料层,在第一导电材料和衬底上沉积绝缘层,形成 在所述绝缘层中开口以露出所述第一导电材料的至少一部分,在所述绝缘层上并在所述开口内沉积第二导电材料,去除所述第二导电材料的部分以在所述开口内形成导电区域,使所述导电 在所述开口内的所述绝缘层的上表面以下的水平面上,在所述开口内的所述凹入的导电区域上形成第三导电材料的盖,在所述盖上沉积基于硫属元素化物的存储单元材料的堆叠, 导电材料在硫族化物堆上。

    Rewrite prevention in a variable resistance memory
    77.
    发明授权
    Rewrite prevention in a variable resistance memory 有权
    在可变电阻存储器中重写防止

    公开(公告)号:US07224632B2

    公开(公告)日:2007-05-29

    申请号:US11070213

    申请日:2005-03-03

    IPC分类号: G11C7/00 G11C8/00

    摘要: A variable resistance memory cell is read by a sense amplifier but without rewriting the contents of the memory cell. If the memory cell has an access transistor, the access transistor is switched off to decouple the cell from the bit line after a predetermined amount of time. The predetermined amount of time is sufficiently long enough to permit the logical state of the cell to be transferred to the bit line and also sufficiently short to isolate the cell from the bit line before the sense amplifier operates. For memory cells which do not utilize an access transistor, an isolation transistor may be placed in the bit line located between and serially connection the portion of the bit line from the sense amplifier to the isolation transistor and the portion of the bit line from the isolation transistor to the memory cell. The isolation transistor, normally conducting, is switched off after the predetermined time past the time the bit line begins to discharge through the memory cell, thereby isolating the memory cell from the sense amplifier before a sensing operation begins.

    摘要翻译: 可变电阻存储单元由读出放大器读取,但不重写存储单元的内容。 如果存储单元具有存取晶体管,则在预定时间量之后,存取晶体管被切断以将单元与位线去耦。 预定的时间量足够长以允许将单元的逻辑状态传送到位线,并且还足够短以在读出放大器操作之前将单元与位线隔离。 对于不使用存取晶体管的存储单元,可以将隔离晶体管放置在位线之间,位线之间并且将位线的从读出放大器的部分串联连接到隔离晶体管,并且位线的部分与隔离 晶体管到存储单元。 在通过存储单元的位线开始放电的时间之后的预定时间之后,正常导通的隔离晶体管被关断,从而在感测操作开始之前将存储单元与读出放大器隔离。

    Silver-selenide/chalcogenide glass stack for resistance variable memory
    78.
    发明申请
    Silver-selenide/chalcogenide glass stack for resistance variable memory 有权
    用于电阻变量记忆的硒化银/硫族化物玻璃堆叠

    公开(公告)号:US20070102691A1

    公开(公告)日:2007-05-10

    申请号:US11585259

    申请日:2006-10-24

    IPC分类号: H01L47/00

    摘要: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100−x composition.

    摘要翻译: 本发明涉及用于提供具有改进的数据保持和切换特性的电阻可变存储元件的方法和装置。 根据本发明的实施例,提供了一种电阻可变存储元件,其在玻璃层之间具有至少一个硒化银层,其中至少一个玻璃层是硫族化物玻璃,优选具有Ge x 100< 100< 100>组合物。

    Memory element and its method of formation
    79.
    发明申请
    Memory element and its method of formation 有权
    记忆元素及其形成方法

    公开(公告)号:US20060252176A1

    公开(公告)日:2006-11-09

    申请号:US11480412

    申请日:2006-07-05

    IPC分类号: H01L21/06

    摘要: A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.

    摘要翻译: 本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。 该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层,形成在第一硫族化物玻璃层上形成的第一金属含层上。 含金属薄层优选为银层。 可以在薄银层上方形成电极。 电极优选不含银。

    Multi-stage processes for drying and curing substrates coated with aqueous basecoat and a topcoat
    80.
    发明申请
    Multi-stage processes for drying and curing substrates coated with aqueous basecoat and a topcoat 审中-公开
    干燥和固化涂覆有底漆和水性底漆的基材的多阶段工艺

    公开(公告)号:US20060222778A1

    公开(公告)日:2006-10-05

    申请号:US10567819

    申请日:2004-09-03

    IPC分类号: B29C71/02

    摘要: A multi-stage process for drying and curing substrates coated with liquid waterborne basecoat and a topcoat includes: (a) applying a liquid waterborne basecoating composition to the substrate surface; (b) exposing the basecoating composition to air having a temperature ranging from ambient to about 40° C. for a period of about 30 seconds to volatilize at least a portion of volatile material from the liquid basecoating composition, the velocity of the air at the surface of the basecoating composition being about 0.3 to about 1 meter per second; (c) applying heated air to the basecoating composition for a period ranging from about 30 to about 45 seconds, the velocity of the air at the surface of the basecoating composition ranging from about 1.5 to 15 meters per second, the air having a temperature ranging from about 30° C. to about 90° C.; (d) applying infrared radiation and heated air simultaneously to the basecoating composition for a period of ranging from about 30 to 45 seconds, the velocity of the air at the surface of the basecoating ranging from about 1.5 to 5 meters per second, the air having a temperature ranging from about 30° C. to about 60° C., such that a sufficiently dried basecoat is formed upon the surface of the substrate; (e) applying a topcoating composition over the basecoat; and (f) simultaneously curing the basecoating composition and the topcoating composition together.

    摘要翻译: 用于干燥和固化涂覆有液体水性底涂层和面漆的基材的多阶段方法包括:(a)将液体水性底涂剂组合物施用于基材表面; (b)将底涂层组合物暴露于温度为环境温度至约40℃的空气中约30秒的时间,以使来自液体底漆组合物的至少一部分挥发性物质挥发, 底漆组合物的表面为约0.3至约1米/秒; (c)将加热的空气施加到底涂层组合物约30至约45秒的时间段内,底涂层组合物表面的空气速度为约1.5至15米/秒,空气的温度范围为 约30℃至约90℃。 (d)将红外辐射和加热的空气同时施加到底漆组合物约30至45秒的范围内,底涂层表面的空气速度为约1.5至5米/秒,空气具有 温度范围为约30℃至约60℃,使得在基材表面上形成充分干燥的底涂层; (e)在底漆上施用面漆组合物; 和(f)同时将底漆组合物和表面涂料组合物固化在一起。