公开(公告)号：US07876599B2

公开(公告)日：2011-01-25

申请号：US12398256

申请日：2009-03-05

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

IPC分类号： G11C11/00

CPC分类号： G11C5/025 ,  G11C11/1653 ,  G11C11/1673

摘要： The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

摘要翻译： 本公开涉及将参考列或参考行选择性地放置在存储器阵列中的方法。 该方法包括测量存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值，并映射每个测量的可变电阻存储单元的位置，以形成多个可变电阻存储单元的电阻状态电阻值的映射 在内存阵列内。 然后，基于存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值的映射来选择列或行作为参考列或参考行，以最小化读取操作错误，以及形成可变电阻存储器 单元存储器阵列。

公开(公告)号：US20100110785A1

公开(公告)日：2010-05-06

申请号：US12406356

申请日：2009-03-18

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Ran Wang ,  Harry Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Ran Wang ,  Harry Hongyue Liu

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/06

CPC分类号： G11C7/062 ,  G11C11/1673 ,  G11C11/1693 ,  G11C13/004 ,  G11C2013/0057 ,  G11C2207/063

摘要： Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.

摘要翻译： 本发明的各种实施例通常涉及用于感测诸如自旋扭矩传递随机存取存储器（STRAM）单元的存储器单元的编程状态的方法和装置。 将第一读取电流施加到存储器单元以产生第一电压。 随后将第二读取电流施加到存储器单元以产生第二电压，其中第二读取电流在幅度上与第一读取电流成比例。 在第一和第二电压之间进行比较以确定存储器单元的编程状态。

公开(公告)号：US20100110760A1

公开(公告)日：2010-05-06

申请号：US12390728

申请日：2009-02-23

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C7/00 ,  G11C11/24

CPC分类号： G11C13/004 ,  G11C11/1673 ,  G11C27/02 ,  G11C2013/0057 ,  G11C2207/2254

摘要： Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.

摘要翻译： 描述了自参考读取方法的电阻记忆校准。 读取电阻性存储器单元的一种自参考方法包括将多个电阻存储器单元设置为第一电阻数据状态。 电阻存储器单元形成存储器阵列。 通过施加第一读取电流和第二读取电流通过每个电阻性存储器单元，然后比较由第一读取电流和第二读取电流形成的电压，来为每个电阻性存储器单元读取感测的电阻数据状态，以确定感测的电阻数据状态 每个电阻存储器单元。 然后，该方法包括调整每个电阻性存储器单元的第一或第二读取电流，读取电压或存储器件电容，其中感测的电阻数据状态与第一电阻数据状态不同，直到感测的电阻数据状态相同 作为第一电阻数据状态。

公开(公告)号：US20100095052A1

公开(公告)日：2010-04-15

申请号：US12482693

申请日：2009-06-11

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Yuan Yan ,  Harry Hongyue Liu

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G06F3/061 ,  G06F3/0655 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/2024 ,  G06F2212/205 ,  G06F2212/225 ,  G06F2212/7202

摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

摘要翻译： 本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。 根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。 将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

公开(公告)号：US08553454B2

公开(公告)日：2013-10-08

申请号：US13400515

申请日：2012-02-20

申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Alan Xuguang Wang ,  Xiaobin Wang

发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Alan Xuguang Wang ,  Xiaobin Wang

IPC分类号： G11C11/14 ,  G11C8/00 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell. In accordance with some embodiments, a semiconductor memory has an array of non-volatile memory cells, and a control circuit which stores a first write command from a host to write data to said array. A write circuit flows a write current through an unconditioned first selected cell having a first block address associated with the first write command to write the first selected cell to a selected data state, and concurrently passes a thermal preconditioning current through a second selected cell having a second block address associated with the first block address. The write circuit further passes a thermal preconditioning current through a third selected cell having a third block address associated with the second block address in response to receipt by the control circuit of a second write command from the host associated with the second block address.

摘要翻译： 使用热预处理将数据写入非易失性存储单元的方法和装置。 根据一些实施例，半导体存储器具有非易失性存储器单元的阵列，以及存储来自主机的第一写命令以将数据写入所述阵列的控制电路。 写入电路通过具有与第一写入命令相关联的第一块地址的无条件的第一选定单元流动写入电流，以将第一选定单元写入所选择的数据状态，并且同时通过热预处理电流通过具有 与第一块地址相关联的第二块地址。 响应于控制电路接收到与第二块地址相关联的主机的第二写入命令，写入电路进一步传递热预处理电流通过具有与第二块地址相关联的第三块地址的第三选定单元。

公开(公告)号：US20120224417A1

公开(公告)日：2012-09-06

申请号：US13472867

申请日：2012-05-16

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US20120163065A1

公开(公告)日：2012-06-28

申请号：US13410783

申请日：2012-03-02

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

IPC分类号： G11C11/00

CPC分类号： G11C5/025 ,  G11C11/1653 ,  G11C11/1673

摘要： The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

摘要翻译： 本公开涉及将参考列或参考行选择性地放置在存储器阵列中的方法。 该方法包括测量存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值，并映射每个测量的可变电阻存储单元的位置，以形成多个可变电阻存储单元的电阻状态电阻值的映射 在内存阵列内。 然后，基于存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值的映射来选择列或行作为参考列或参考行，以最小化读取操作错误，以及形成可变电阻存储器 单元存储器阵列。

公开(公告)号：US20110085373A1

公开(公告)日：2011-04-14

申请号：US12968441

申请日：2010-12-15

申请人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

发明人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

IPC分类号： G11C11/16

CPC分类号： G11C11/1673

摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

公开(公告)号：US20100321994A1

公开(公告)日：2010-12-23

申请号：US12869835

申请日：2010-08-27

申请人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

发明人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

IPC分类号： G11C11/14 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A magnetic tunnel junction memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a magnetic tunnel junction memory unit includes applying a first read current through a magnetic tunnel junction data cell to form a first bit line read voltage, then applying a first magnetic field through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell, and then applying a second read current thorough the magnetic field modified magnetic tunnel junction data cell to form a second bit line read voltage. The first read current being less than the second read current. Then comparing the first bit line read voltage with the second bit line read voltage to determine whether the magnetic tunnel junction data cell was in a high resistance state or a low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了磁性隧道结存储装置和自参考读写辅助方案。 一种读取磁性隧道结存储单元的自参考方法包括：通过磁性隧道结数据单元施加第一读取电流以形成第一位线读取电压，然后通过形成磁性隧道结数据单元的磁性隧道结数据单元施加第一磁场 磁场修正磁隧道结数据单元，然后通过磁场修正磁隧道结数据单元施加第二读电流，形成第二位线读电压。 第一读取电流小于第二读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元是处于高电阻状态还是处于低电阻状态。 还公开了将磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US20100103729A1

公开(公告)日：2010-04-29

申请号：US12372190

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

发明人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过形成磁场修正磁隧道结数据单元的磁隧道结数据单元施加磁场。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将磁场施加到MTJ然后写入期望的电阻状态的方法。