利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

137 条记录 (耗时 0.033 秒)

    Tungsten sealing glass for use in a fluorescent lamp
    71.
    发明授权
    Tungsten sealing glass for use in a fluorescent lamp 失效
    用于荧光灯的钨密封玻璃

    公开(公告)号：US06815385B2

    公开(公告)日：2004-11-09

    申请号：US10619997

    申请日：2003-07-15

    申请人： Hiroyuki Kosokabe ,  Koichi Hashimoto

    发明人： Hiroyuki Kosokabe ,  Koichi Hashimoto

    IPC分类号： C03C802

    CPC分类号： H01J61/36 ,  C03C3/091 ,  C03C3/093 ,  C03C3/095 ,  C03C3/108 ,  C03C8/24

    摘要： A tungsten sealing glass for use in a fluorescent lamp, said glass having a composition of, by mass percent, 65-76% SiO2, 10-25% B2O3, 2-6% Al2O3, 0.5-5.8% MgO+CaO+SrO+BaO+ZnO, 3-8% Li2O+Na2O+K2O, 0.01-4% Fe2O3+CeO2, 0.1-5% TiO2, 0.1-10% TiO2+Sb2O3+PbO, and 0-2% ZrO2, wherein Na2O/(Na2O+K2O)≦0.6.

    摘要翻译： 一种用于荧光灯的钨密封玻璃，所述玻璃的质量百分比为65-76％SiO 2，10-25％B 2 O 3，2-6％Al 2 O 3，0.5-5.8％MgO + CaO + SrO + BaO + ZnO，3-8％Li2O + Na2O + K2O，0.01-4％Fe2O3 + CeO2，0.1-5％TiO2，0.1-10％TiO2 + Sb2O3 + PbO和0-2％ZrO2，其中Na2O /（Na2O + K2O）<= 0.6。

    Enhanced semiconductor integrated circuit device with a memory array and a peripheral circuit
    73.
    发明授权
    Enhanced semiconductor integrated circuit device with a memory array and a peripheral circuit 失效
    具有存储器阵列和外围电路的增强型半导体集成电路器件

    公开(公告)号：US5850096A

    公开(公告)日：1998-12-15

    申请号：US394347

    申请日：1995-02-23

    申请人： Tetsuo Izawa ,  Hiroshi Goto ,  Koichi Hashimoto

    发明人： Tetsuo Izawa ,  Hiroshi Goto ,  Koichi Hashimoto

    IPC分类号： H01L21/768 ,  H01L29/00

    CPC分类号： H01L21/76895

    摘要： A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.

    摘要翻译： 一种制造半导体集成电路的方法包括以下步骤：在基板上提供导体膜，在导体膜上提供绝缘膜以形成层状结构，从对应于导体图案的第一部分选择性地去除绝缘膜， 形成，同时在其第二部分上保留绝缘膜，其也对应于要形成的导体图案，图案化层叠结构以形成由侧壁限定的导体图案，为侧壁的每个侧壁提供侧壁绝缘 在导体图案的第一部分上提供第一局部互连图案，使得第一局部互连图案在第一部分建立与导体图案的电连接，并且在第二部分上提供第二局部互连图案 导体图案，使得第二局部互连图案穿过导体图案 在第二部分，没有建立与其的电连接。

    Plasma treatment method
    74.
    发明授权
    Plasma treatment method 失效
    等离子体处理方法

    公开(公告)号：US5846885A

    公开(公告)日：1998-12-08

    申请号：US702161

    申请日：1996-08-23

    申请人： Takeshi Kamata ,  Hiroshi Arimoto ,  Makoto Kosugi ,  Koichi Hashimoto

    发明人： Takeshi Kamata ,  Hiroshi Arimoto ,  Makoto Kosugi ,  Koichi Hashimoto

    IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32082 ,  H01J37/32706 ,  H01L21/3065

    摘要： In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.

    摘要翻译： 在能够降低电子阴影效应并且还抑制电荷损伤而不影响等离子体处理中的各种特性的半导体器件的等离子体设备和等离子体处理方法中，衬底偏置电极和A对电极之间的距离设定为小于等于 长达电子的平均自由路径。 向基板偏置电极供给100kHz〜1MHz的高频电力，向对置电极供给1MHz〜100MHz的高频电力。

    Manufacture of semiconductor device using a-c anti-reflection coating
    75.
    发明授权
    Manufacture of semiconductor device using a-c anti-reflection coating 失效
    使用a-c抗反射涂层制造半导体器件

    公开(公告)号：US5750316A

    公开(公告)日：1998-05-12

    申请号：US404550

    申请日：1995-03-15

    申请人： Eiichi Kawamura ,  Teruyoshi Yao ,  Nobuhisa Naori ,  Koichi Hashimoto ,  Masaharu Kobayashi ,  Tadasi Oshima

    发明人： Eiichi Kawamura ,  Teruyoshi Yao ,  Nobuhisa Naori ,  Koichi Hashimoto ,  Masaharu Kobayashi ,  Tadasi Oshima

    IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/091

    摘要： A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

    摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在光反射表面上形成透明氧化膜; 在透明膜的表面上形成抗反射性的a-c膜; 并且在抗反射膜的表面上涂覆光致抗蚀剂膜并对该光致抗蚀剂膜进行构图，其中选择抗反射膜和透明膜的厚度，以将驻波强度Isw = I delta / Iave设定为 0.2或更小，其中Iave是光致抗蚀剂膜中的光强度的平均值，I delta是光强度变化的幅度。 可以在具有小尺寸变化和高精度的高反射性基板上形成精细图案。

    Glass for a fluorescent lamp
    76.
    发明授权
    Glass for a fluorescent lamp 失效
    玻璃用于荧光灯

    公开(公告)号：US5747399A

    公开(公告)日：1998-05-05

    申请号：US711804

    申请日：1996-09-10

    申请人： Hiroyuki Kosokabe ,  Koichi Hashimoto

    发明人： Hiroyuki Kosokabe ,  Koichi Hashimoto

    IPC分类号： C03C3/091 ,  C03C3/108 ,  C03C4/08 ,  C03C3/093 ,  C03C4/12

    CPC分类号： C03C3/091 ,  C03C3/108 ,  C03C4/085

    摘要： In order to provide a glass which can be sealed to tungsten and Kovar and has a solarization resistance against the ultraviolet ray, and which is adaptable for use in a fluorescent lamp of a reduced size used as a light source for a lighting device in a liquid crystal display (13). The glass for use in a fluorescent lamp which consists essentially, by weight, of SiO.sub.2 55-79%, B.sub.2 O.sub.3 12.5-25%, Al.sub.2 O.sub.3, 0.5-10% Li.sub.2 O+Na.sub.2 O+K.sub.2 O 1-16%, ZrO.sub.2 0.01-5%, TiO.sub.2 +PbO+Sb.sub.2 O.sub.3 0.05-11%.

    摘要翻译： 为了提供可以与钨和科瓦尔密封的玻璃，并且具有抵抗紫外线的耐日晒性，并且适用于用作液体中的照明装置的光源的减小尺寸的荧光灯 水晶显示器（13）。 用于荧光灯的玻璃，其基本上由SiO 2 55-79％，B 2 O 3 12.5-25％，Al 2 O 3，0.5-10％Li 2 O + Na 2 O + K 2 O 1-16％，ZrO 2 0.01-5％ TiO2 + PbO + Sb2O3 0.05-11％。

    Method of manufacturing semiconductor device
    77.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5670017A

    公开(公告)日：1997-09-23

    申请号：US350841

    申请日：1994-12-07

    申请人： Koichi Hashimoto

    发明人： Koichi Hashimoto

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/306

    CPC分类号： H01L21/31144 ,  H01L21/31116

    摘要： A method of manufacturing a semiconductor device of the present invention includes steps of introducing mixed gas containing CHF.sub.3 and CF.sub.4 in which a gas flow ratio of CF.sub.4 among CHF.sub.3 and CF.sub.4 is 30% or lower into an etching atmosphere, setting the pressure in the etching atmosphere to 1.2 Torr or lower and applying radio frequency electric power of 4 W/cm.sup.2 or more to a pair of electrodes, thereby to apply patterning with etching to an insulating film using a resist pattern as a mask.

    摘要翻译： 本发明的半导体装置的制造方法包括将CHF 3和CF 4中的CF 4的气体流量比为30％以下的含有CHF 3和CF 4的混合气体导入蚀刻气氛的步骤，设定蚀刻气氛中的压力 至1.2Torr以下，对一对电极施加4W / cm 2以上的射频电力，由此利用抗蚀剂图案作为掩模，利用蚀刻对绝缘膜进行图案化。

    Amino-alcohol derivatives and processes for their preparation
    78.
    发明授权
    Amino-alcohol derivatives and processes for their preparation 失效
    氨基醇衍生物及其制备方法

    公开(公告)号：US5250546A

    公开(公告)日：1993-10-05

    申请号：US551037

    申请日：1990-07-11

    申请人： Mitsuo Masaki ,  Haruhiko Shinozaki ,  Masaru Satoh ,  Naoya Moritoh ,  Koichi Hashimoto ,  Toshiro Kamishiro

    发明人： Mitsuo Masaki ,  Haruhiko Shinozaki ,  Masaru Satoh ,  Naoya Moritoh ,  Koichi Hashimoto ,  Toshiro Kamishiro

    IPC分类号： C07D295/13 ,  A61K31/445

    CPC分类号： C07D295/13

    摘要： Amino-alcohol derivatives of the formula, ##STR1## where R.sub.1 is a straight or branched alkyl group having 3 to 8 carbon atoms, R.sub.2 and R.sub.3 are each a lower alkyl group, or R.sub.2 and R.sub.3 form a 5- to 7-membered ring together with the adjacent nitrogen atom which may have an oxygen atom attached thereto, R.sub.4 is a hydrogen atom or a lower alkyl group, R.sub.5 is a hydrogen atom or a lower alkyl group, X is a hydrogen or halogen atom or a lower alkyl or lower alkoxy group, and n is an integer of 2 or 3, and acid addition salts thereof, are effectively useful as medicines and agricultural chemicals. Processes are also disclosed for preparing such compounds.

    摘要翻译： 其中R1是具有3至8个碳原子的直链或支链烷基，R2和R3各自为低级烷基，或R2和R3形成5-至7-元环的下式的氨基醇衍生物， 与可能具有氧原子的相邻氮原子一起，R4是氢原子或低级烷基，R5是氢原子或低级烷基，X是氢或卤素原子或低级烷基或低级烷基 烷氧基，n为2或3的整数，其酸加成盐可有效用作药物和农药。 还公开了制备这些化合物的方法。

    Alumina fiber and a method of producing the same
    79.
    发明授权
    Alumina fiber and a method of producing the same 失效
    氧化铝纤维及其制造方法

    公开(公告)号：US5051210A

    公开(公告)日：1991-09-24

    申请号：US483174

    申请日：1990-02-22

    申请人： Toshio Kitao ,  Yoshiharu Kimura ,  Hideki Yamane ,  Koichi Hashimoto

    发明人： Toshio Kitao ,  Yoshiharu Kimura ,  Hideki Yamane ,  Koichi Hashimoto

    IPC分类号： C04B35/622 ,  D01F9/10 ,  H01B1/18

    CPC分类号： C04B35/62231 ,  C04B35/62236 ,  D01F9/10 ,  H01B1/18 ,  Y10T428/2931 ,  Y10T428/294

    摘要： An electrically conductive alumina fiber which heretofore known only as electrically insulative is now provided, which comprises an aluminum oxide matrix, and a continuous phase of carbon in the aluminum oxide matrix, the continued phase of carbon affording an electrically conductive property to the fiber. Also, a method of producing the alumina fiber is disclosed, comprising pyrolyzing a fiber of poly[(acyloxy)aloxane)] having a formula ##STR1## wherein, R.sub.1 represents CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.3, R.sub.2 represents ##STR2## or other substituted aromatic group, in an inert atmosphere.

    摘要翻译： 现在提供迄今为止仅称为电绝缘的导电氧化铝纤维，其包含氧化铝基体和氧化铝基体中的碳的连续相，碳的连续相为纤维提供导电性质。 另外，公开了一种生产氧化铝纤维的方法，其包括将式（1）中的聚[（酰氧基）aloxane）]的纤维热分解，其中R1表示CH 2 CH 2 OCH 2 CH 3，R 2表示其它取代的芳族基团， 惰性气氛。